VISHAY 80EPF02PBF

80EPF..PbF Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery
Rectifier Diode, 80 A
FEATURES/DESCRIPTION
The 80EPF..PbF fast soft recovery rectifier series
has been optimized for combined short reverse
recovery time and low forward voltage drop.
Base
common
cathode
2, 4
Pb-free
Available
RoHS*
COMPLIANT
The glass passivation ensures stable reliable
operation in the most severe temperature and power cycling
conditions.
TO-247AC
Anode
1
This product series has been designed and qualified for
Industrial level and lead (Pb)-free.
Anode
3
APPLICATIONS
• Output rectification and
choppers and converters
PRODUCT SUMMARY
VF at 40 A
< 1.1 V
trr
70 ns
VRRM
200 to 600 V
freewheeling
in
inverters,
• Input rectifications where severe restrictions on conducted
EMI should be met
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
IF(AV)
VALUES
UNITS
200 to 600
V
Sinusoidal waveform
80
IFSM
A
1000
trr
1 A, - 100 A/µs
VF
40 A, TJ = 25 °C
TJ
Range
70
ns
1.1
V
- 40 to 150
°C
VRRM, MAXIMUM PEAK REVERSE
VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
80EPF02PbF
200
300
80EPF04PbF
400
500
80EPF06PbF
600
700
VOLTAGE RATINGS
PART NUMBER
17
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
SYMBOL
TEST CONDITIONS
IF(AV)
TC = 95 °C, 180° conduction half sine wave
80
10 ms sine pulse, rated VRRM applied
850
10 ms sine pulse, no voltage reapplied
1000
10 ms sine pulse, rated VRRM applied
3610
10 ms sine pulse, no voltage reapplied
5100
t = 0.1 to 10 ms, no voltage reapplied
51 000
IFSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
I2√t
VALUES
UNITS
A
A2s
A2√s
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94106
Revision: 05-Jun-08
For technical questions, contact: [email protected]
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1
80EPF..PbF Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery
Rectifier Diode, 80 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
Forward slope resistance
VFM
rt
Threshold voltage
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
VALUES
80 A, TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
1.25
V
3.5
mΩ
0.85
V
0.1
VR = Rated VRRM
TJ = 150 °C
UNITS
mA
17
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Reverse recovery time
trr
IF at 40 Apk
190
ns
Reverse recovery current
Irr
3.4
A
Reverse recovery charge
Qrr
25 A/µs
25 °C
0.5
µC
Snap factor
S
IFM
trr
di
dt
0.5
t
Qrr
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
TEST CONDITIONS
DC operation
UNITS
- 40 to 150
°C
0.35
40
Mounting surface, smooth and greased
°C/W
0.2
6
g
0.21
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(Ibf · in)
Approximate weight
Mounting torque
VALUES
80EPF02
Marking device
Case style TO-247AC
80EPF04
80EPF06
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For technical questions, contact: [email protected]
Document Number: 94106
Revision: 05-Jun-08
80EPF..PbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 80 A
Vishay High Power Products
180
80EPF.. Series
RthJC (DC) = 0.35 K/W
140
130
Ø
Conduction angle
120
110
30°
100
120°
60°
90
90°
140
120
80
60
180°
Ø
40
Conduction period
20
80EPF.. Series
TJ = 150 °C
0
10
0
30
20
40
50
60
70
90
80
0
20
40
60
80
100
120
140
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
1000
150
80EPF.. Series
RthJC (DC) = 0.35 K/W
140
130
Ø
Conduction period
120
110
30°
100
60°
90°
90
180°
DC
40
60
80
100
120
Peak Half Sine Wave
Forward Current (A)
60
Ø
40
Conduction angle
20
80EPF.. Series
TJ = 150 °C
30
40
50
60
70
80
90
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
700
600
500
400
80EPF.. Series
200
0.01
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Document Number: 94106
Revision: 05-Jun-08
100
Maximum non-repetitive surge current
versus pulse train duration.
800
300
0
20
10
900
RMS limit
10
80EPF.. Series
1000
80
0
400
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
180°
120°
90°
60°
30°
100
500
1
Fig. 2 - Current Rating Characteristics
120
600
140
Average Forward Current (A)
140
700
200
80
20
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
800
300
120°
0
At any rated load condition and with
rated VRRM applied following surge.
900
Peak Half Sine Wave
Forward Current (A)
Maximum Allowable Case
Temperature (°C)
RMS limit
100
80
Maximum Average Forward
Power Loss (W)
DC
180°
120°
90°
60°
30°
160
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
150
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
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80EPF..PbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 80 A
Vishay High Power Products
Instantaneous Forward Current (A)
1000
100
TJ = 25 °C
TJ = 150 °C
10
80EPF.. Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.22
4.0
IFM = 125 A
0.18
IFM = 40 A
IFM = 80 A
0.16
IFM = 20 A
IFM = 10 A
0.14
0.12
0.10
0.08
80EPF.. Series
TJ = 25 °C
0.06
IFM = 125 A
IFM = 80 A
3.0
IFM = 40 A
2.5
2.0
IFM = 20 A
1.5
IFM = 10 A
1.0
0.5
IFM = 1 A
0.04
IFM = 1 A
0
0
40
80
120
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
0.6
14
0.5
12
Qrr - Maximum Reverse
Recovery Charge (µC)
trr - Maximum Reverse
Recovery Time (µs)
80EPF.. Series
TJ = 25 °C
3.5
Qrr - Maximum Reverse
Recovery Charge (µC)
trr - Maximum Reverse
Recovery Time (µs)
0.20
IFM = 80 A
0.4
IFM = 40 A
0.3
IFM = 20 A
IFM = 10 A
0.2
0.1
IFM = 1 A
80EPF.. Series
TJ = 150 °C
80EPF.. Series
TJ = 150 °C
IFM = 80 A
10
8
IFM = 40 A
6
IFM = 20 A
IFM = 10 A
4
2
IFM = 1 A
0
0
0
40
80
120
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
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For technical questions, contact: [email protected]
Document Number: 94106
Revision: 05-Jun-08
80EPF..PbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 80 A
Vishay High Power Products
22
45
IFM = 125 A
80EPF.. Series
TJ = 25 °C
18
IFM = 40 A
16
14
IFM = 20 A
12
IFM = 10 A
10
8
6
IFM = 1 A
4
35
IFM = 80 A
IFM = 40 A
IFM = 20 A
IFM = 10 A
IFM = 1 A
30
25
20
15
10
5
2
0
0
40
0
ZthJC - Transient Thermal Impedance (K/W)
80EPF.. Series
TJ = 150 °C
40
IFM = 80 A
Irr - Maximum Reverse
Recovery Current (A)
Irr - Maximum Reverse
Recovery Current (A)
20
80
120
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
1
Steady state value
(DC operation)
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
80EPF.. Series
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Document Number: 94106
Revision: 05-Jun-08
For technical questions, contact: [email protected]
www.vishay.com
5
80EPF..PbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 80 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
80
E
P
F
06
PbF
1
2
3
4
5
6
1
-
Current rating (80 = 80 A)
2
-
Circuit configuration:
E = Single diode
3
-
Package:
P = TO-247AC
4
-
Type of silicon:
F = Fast diode
5
-
6
-
Voltage code x 100 = VRRM
None = Standard production
02 = 200 V
04 = 400 V
06 = 600 V
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95223
Part marking information
http://www.vishay.com/doc?95226
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For technical questions, contact: [email protected]
Document Number: 94106
Revision: 05-Jun-08
Outline Dimensions
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Vishay Semiconductors
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Ø P
E
B
(2) R/2
N
A2
S
(Datum B)
Ø K M DBM
FP1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
Planting
(4)
E1
0.01 M D B M
View A - A
C
2x e
A1
b4
(b1, b3, b5)
Lead assignments
Base metal
D DE
(c)
c1
E
C
C
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.37
2.59
3.43
2.59
3.38
0.38
0.86
0.38
0.76
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.094
0.102
0.135
0.102
0.133
0.015
0.034
0.015
0.030
0.776
0.815
0.515
-
View B
NOTES
SYMBOL
3
4
D2
E
E1
e
FK
L
L1
N
P
P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.72
5.46 BSC
2.54
14.20
16.10
3.71
4.29
7.62 BSC
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.3
0.14
0.144
0.275
0.209
0.224
1.78
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
Document Number: 95223
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
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damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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Document Number: 91000
Revision: 11-Mar-11
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