DSKTJ08 Tentative Total pages page DSKTJ08 Silicon N-channel junction FET For AF impedance converter Marking Symbol : CT, CU Package Code : TSSSMini3-F2-B Absolute Maximum Ratings Ta = 25 °C Parameter Drain-source voltage(Gate open) Drain-gate voltage(Source open) Drain-source current(Gate open) Drain-gate current(Source open) power dissipation Operating ambient temperature Storage temperature Symbol Rating Unit VDSO VDGO IDSO IDGO PD Topr Tstg 20 20 2 2 100 -20 to +80 -55 to +150 V V mA mA mW °C °C Pin name 1. Drain 2. Source 3. Gate Electrical Characteristics Ta = 25 °C±3 °C Parameter Drain current *1,*4 Drain-source current Conditions VDD = 2.0 V, Rd = 2.2 kΩ ± 1% VDD = 2.0 V, Rd = 2.2 kΩ ± 1%, IDSS VGS = 0 gm VDS = 2.0 V, VGS = 0, f = 1 kHz VDD = 2.0 V, Rd = 2.2 kΩ ± 1% NV Co = 5 pF, A-curve VDD = 2.0 V, Rd = 2.2 kΩ ± 1% GV1 Co = 5 pF, eG = 10 mV, f = 1 kHz VDD = 1.5 V, Rd = 2.2 kΩ ± 1% GV2 Co = 5 pF, eG = 10 mV, f = 1 kHz VDD = 2.0 V, Rd = 2.2 kΩ ± 1% Δ | GV・f | Co = 5 pF, eG = 10 mV f = 1 kHz to 70 Hz ID *4 Mutual conductance Noise voltage Symbol *2 Voltage gain Voltage gain difference Voltage gain difference *3 Min Max Unit 180 470 μA 190 460 μA 660 1 500 μS 10 -5.0 -1.0 -7.0 -1.5 μV dB 0 0 ｜GV1-GV2｜ Typ 1.7 2.0 Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. A protection diode is built-in between gate and source of transistor. However if forward current flows between gate and source transistor might be damaged. So please be careful not insert reverse. 3. *1 ID is assured for IDSS. *2 NV is assured for design. *3 Δ|GV . f | is assured for AQL 0.065. (The measurement method is used by source-grounded circuit.) *4 Rank classification Code T U Packing Rank T ID 180 to 320 IDSS 190 to 310 Marking symbo CT 280 290 U to 470 to 460 CU Embossed type (Thermo-compression sealing) : 10 000 pcs / reel 2010.05.31 2010.7.29 Prepared Revised Semiconductor Company，Panasonic Corporation TSSSMini3-F2-B Unit: mm +0.05 +0.05 0.33 −0.02 0.08 −0.02 2 1 +0.05 0.15 min. 5° 1.20 ±0.05 0.80 ±0.05 3 0.23 −0.02 (0.40) (0.40) 0.80 ±0.05 1.20 ±0.05 0.33 max. 0.01 ±0.01 0.15 max. 5° Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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