INFINEON PTFA220121M

PTFA220121M
Confidential, Limited Internal Distribution
High Power RF LDMOS Field Effect Transistor
12 W, 700 – 2200 MHz
Description
The PTFA220121M is an unmatched 12-watt LDMOS FET intended
for power amplifier applications in the 700 to 2200 MHz. This LDMOS
device offers excellent gain, efficiency and linearity performance in
a small overmolded plastic package.
Features
Two-tone Drive-up
VDD = 28 V, IDQ = 150 mA,
ƒ1 = 876.95 MHz, ƒ2 = 877.05 MHz
-10
50
-15
45
•
Typical two-carrier WCDMA performance at 2140
MHz, 8 dB PAR
- POUT = 33 dBm Avg
- ACPR = –45.5 dBc
•
Typical two-carrier WCDMA performance at 877
MHz, 8 dB PAR
- POUT = 33 dBm Avg
- ACPR = –44.5 dBc
•
Typical CW performance, 2140 MHz, 28 V
- POUT = 41.6 dBm
- Efficiency = 53.5%
- Gain = 15.5 dB
•
Typical CW performance, 877 MHz, 28 V
- POUT = 41.8 dBm
- Efficiency = 60%
- Gain = 19.9 dB
•
Capable of handling 10:1 VSWR @ 28 V, 12 W
(CW) output power
•
Integrated ESD protection : Human Body Model,
Class 2 (minimum)
•
Excellent thermal stability
•
Pb-free and RoHS compliant
40
Efficiency
-25
35
-30
30
-35
25
-40
Efficiency (%)
-20
IMD (dBc)
PTFA220121M
Package PG-SON-10
20
IMD3
-45
15
-50
10
33
34
35
36
37
38
39
40
41
42
Output Power, PEP (dBm)
RF Characteristics
Two-tone Measurements (not subject to production test - verified by design / characterization in Infineon test fixture)
VDD = 28 V, IDQ = 150 mA, POUT = 12 W PEP, ƒ = 877 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
20
20.5
—
dB
Drain Efficiency
ηD
41
42.5
—
%
Intermodulation Distortion
IMD
—
–33
–32
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
RF Characteristics
Two-tone Measurements (not subject to production test - verified by design / characterization in Infineon test fixture)
VDD = 28 V, IDQ = 150 mA, POUT = 9.3 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
—
16.2
—
dB
Drain Efficiency
ηD
—
37
—
%
Intermodulation Distortion
IMD
—
–29.4
—
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 µA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1.0
µA
On-State Resistance
VGS = 10 V, VDS = 0.1 A
RDS(on)
—
2.01
—
Ω
Operating Gate Voltage
VDS = 28 V, IDQ = 150 mA
VGS
2.0
2.5
3.0
V
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
175
°C
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C, 12 W CW)
RθJC
3.4
°C/W
Moisture Sensitivity Level
Level
Test Standard
Package Temperature
3
IPC/JEDEC J-STD-020
260
Unit
°C
Ordering Information
Type and Version
Package Outline
PTFA220121M V4 V4 R250 PG-SON-10
Package Description
Shipping
Molded plastic, SMD
Tape & Reel, 500 pcs
*See Infineon distributor for future availability.
Data Sheet
2 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Typical Performance, 877 MHz (data taken in Infineon test fixture)
Two-carrier WCDMA 3GPP Drive-up
VDD = 28 V, IDQ = 150 mA, ƒ = 877 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
VDD = 28 V, IDQ = 150 mA, ƒ = 877 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
0
60
50
Gain (dB)
Gain
21
40
20
30
19
20
IMD & ACPR (dBc)
22
Drain Efficiency (%)
-5
31
33
35
37
39
45
-20
40
-25
35
Efficiency
-30
30
-35
20
15
ACPR
10
32
33
34
35
36
37
38
39
40
Output Power (dBm)
Output Power (dBm)
Two-tone Drive-up
VDD = 28 V, IDQ = 150 mA,
CW Performance
Gain & Eff. vs. Output Power & VDD
ƒ1 = 876.95 MHz, ƒ2 = 877.05 MHz
IDQ = 150 mA, ƒ = 877 MHz
50
Efficiency
19
20
Power Gain (dB)
30
Efficiency (%)
40
20
41
22.0
70
V DD = 32 V
V DD = 28 V
V DD = 24 V
21.5
Gain
21
25
IMD Low
-50
41
22
Gain (dB)
-15
-45
10
29
50
-40
Efficiency
18
55
IMD Up
-10
Drain Efficiency (%)
60
60
21.0
50
Gain
20.5
40
20.0
30
19.5
Efficiency (%)
23
Two-carrier WCDMA 3GPP
20
Efficiency
18
10
33
34
35
36
37
38
39
40
41
19.0
42
32
34
36
38
40
42
44
Output Power (dBm)
Output Power, PEP (dBm)
Data Sheet
10
30
3 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Typical Performance, 877 MHz (cont.)
Small Signal CW
Gain & Input Return Loss
VDD = 28 V, IDQ = 150 mA,
ƒ1 = 876.95 MHz, ƒ2 = 877.05 MHz
VDD = 28 V, IDQ = 150 mA
22
0
3rd Order
Power Gain (dB)
-30
IMD (dBc)
Gain
20
5th
-40
-50
34
35
36
37
38
39
40
-10
16
-15
12
727
-60
33
18
IRL
14
7th
41
42
-5
827
-20
927
Input Return Loss (dB)
-20
Intermodulation Distortion
vs. Output Power
-25
1027
Frequency (MHz)
Output Power, PEP (dBm)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
Normalized Bias Voltage (V)
1.03
1.02
0.15 A
1.01
0.30 A
1.00
0.60 A
0.99
0.75 A
0.90 A
0.98
1.05 A
0.97
0.96
-20
1.20 A
0
20
40
60
80
100
Case Temperature (°C)
Data Sheet
4 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Z Source Ω
Frequency
MHz
Z Load Ω
R
jX
R
jX
720
1.1
7.7
12.0
4.8
820
1.0
6.4
12.4
4.0
869
1.3
5.0
10.8
5.9
894
1.2
3.6
9.3
6.7
920
1.4
3.5
9.1
6.7
940
1.5
3.3
9.1
6.9
960
1.4
2.8
8.9
6.3
1675
1.6
0.3
5.0
5.3
1805
2.0
0.3
4.7
3.2
1880
2.0
0.3
4.7
2.9
1930
2.2
–0.9
4.2
3.0
1990
2.6
–2.0
3.8
1.8
2110
2.5
–3.1
3.8
1.8
2170
2.0
–2.6
3.6
1.9
2300
1.7
–1.7
3.3
1.6
2400
2.2
–2.5
3.2
0.5
2500
2.5
–4.5
3.0
0.5
2600
2.4
–4.1
2.7
1.2
2700
1.9
–3.1
2.3
1.4
D
Z Source
Z Load
G
S
R -->
Z0 = 50 Ω
RA T
O
0. 2
720 MHz
Z Load
0 .1
0.5
0.4
0.3
0.2
0.1
0.0
720 MHz
2700 MHz
0.1
2700 MHz
VE
- WA
W ARD L OA D T HS T O
L E NG
- W AV E LE NGT H
S T OW
A RD
GEN
E
Z Source
Data Sheet
5 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Reference Circuit, 877 MHz
a
2 2 0 1 2 1
m− v
4 _ b di n
_
8 7 7
M
H
z_ 0 2
− 2 3 − 2 0 1 0
VDD
28 V
R804
2000 Ohm
S5
1
8
TL109
R805
10 Ohm S3
TL110
TL112
3
In
C801
1000 pF
TL108
4 NC
2
Out
NC
3
6
7
5
C802
1000 pF
DCVS
V1
3
1
2
4
S2
R803
510 Ohm
L1
22 nH
C803
1000 pF
R801
1200 Ohm
2 C
1
B
R802
1300 Ohm
TL113
4
S4
S
3 E
R102
10 Ohm
TL115
C101
68 pF
RF_IN
TL116
TL103
TL102
TL105
TL107
TL104
R101
1.3 Ohm
TL114
2
3
2
1
2
3
1
2
3
TL111
GATE DUT
1
1
3
4
C103
10 pF
Er=3.48
H=20 mil
RO/RO4350B1
TL106
TL101
C104
16 pF
C102
20 pF
Reference circuit input schematic for ƒ = 877 MHz
C201
2200000 pF
TL209
TL204
TL203
TL205
a
2 20 1 2 1
m− v
4_ b d ou t
_ 8 7 7
M
H
z_
01 − 07
TL202 TL223
3
1
− 20 1 0
2
TL201
TL222
C202
68 pF
TL221
TL226
2
3
1
TL206
TL213
2
TL219
TL220
1
3
2
1
3
VDD
28 V
TL207
R1
0000 Ohm
TL212
TL217
TL216
DRAIN DUT
TL214
2
TL215
3
L2
2.7 nH
TL218
TL208
1
1
TL211
TL210
2
1
3
C205
8.2 pF
2
3
TL224
C204
68 pF
TL225
RF_OUT
C203
3.6 pF
Reference circuit output schematic for ƒ = 877 MHz
Data Sheet
6 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Reference Circuit, 877 MHz (cont.)
C801 R802 C803
R804
C201
C202
+
C802
R801
S5
S4
R803
S3
S2
L1
R1
R805
DUT
C101
C103
R101 R102 L2
C205
C203 C204
C104 C102
RO4350, .020
PTFA220121M
(73)
a 2 2 0 1 2 1
m
− v 4 _
C
D_ 8 7 7
M
H
z_
0 1 − 0 7
− 2 0 1 0
Reference circuit assembly diagram (not to scale)*
* Gerber Files for this circuit available on request
Data Sheet
7 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Reference Circuit, 877 MHz (cont.)
Circuit Assembly Information
DUT
PCB
PTFA220121M
LTN/PTFA220121M–8
Component
LDMOS Transistor
0.508 mm [.020"] thick, εr = 3.48
Rogers 4350
1 oz. copper
Description
Suggested Manufacturer
P/N
C101
Chip capacitor, 68 pF
ATC
ATC100A680JW150X
C102
Chip capacitor, 20 pF
ATC
ATC100A200JW150X
C103
Chip capacitor, 10 pF
ATC
ATC100A100JW150X
C104
Chip capacitor, 16 pF
ATC
ATC100A160JW150X
C801, C802, C803
Chip capacitor, 1000 pF
Digi-Key
PCC1772CT-ND
L1
Inductor, 22 nH
Coilcraft
0805HT-22NX_BG
R101
Resistor, 1.3 Ω
Digi-Key
P1.3ECT-ND
R102, R805
Resistor, 10 Ω
Digi-Key
P10ECT-ND
R801
Resistor, 1200 Ω
Digi-Key
P1.2KECT-ND
R802
Resistor, 1300 Ω
Digi-Key
P1.3KECT-ND
R803
Resistor, 510 Ω
Digi-Key
P510ECT-ND
R804
Resistor, 2000 Ω
Digi-Key
P2.0KECT-ND
S2
EMI Suppression Capacitor
Murata
NFM18PS105R0J3
S3
Potentiometer, 2k Ω
Digi-Key
3224W-202ECT-ND
S4
Transistor
Infineon Technologies
BCP56
S5
Voltage regulator
National Semiconductor
LM7805
Chip capacitor, 2.2 µF
Digi-Key
445-1474-2-ND
C202, C204
Chip capacitor, 68 pF
ATC
ATC100A680JW150X
C203
Chip capacitor, 3.6 pF
ATC
ATC100A3R6CW150X
C205
Chip capacitor, 8.2 pF
ATC
ATC100A8R2CW150X
L2
Inductor, 2.7 nH
Coilcraft
0402CS-2N7X_BG
R1
Resistor, 0 Ω
Digi-Key
P0.0KECT-ND
Input
Output
C201
Data Sheet
8 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Reference Circuit, 877 MHz (cont.)
Electrical Characteristics at 877 MHz
Transmission
Electrical
Line
Characteristics
Dimensions: mm
Dimensions: mils
W = 0.000, L = 0.000
W = 0, L = 0
Input
TL101, TL106
TL102
0.050 λ, 51.98 Ω
W = 1.087, L = 10.262
W = 43, L = 404
TL103, TL104, TL105
0.004 λ, 51.98 Ω
W1 = 1.087, W2 = 1.087, W3 = 0.813
W1 = 43, W2 = 43, W3 = 32
TL107
0.004 λ, 51.98 Ω
W = 1.087, L = 0.813
W = 43, L = 32
TL108
W = 1.524
W = 60
TL109
0.007 λ, 54.17 Ω
W = 1.016, L = 1.524
W = 40, L = 60
TL110
0.025 λ, 41.75 Ω
W = 1.524, L = 5.080
W = 60, L = 200
TL111
0.009 λ, 25.04 Ω
W = 3.048, L = 1.778
W = 120, L = 70
TL112
0.002 λ, 41.75 Ω
W = 1.524, L = 0.508
W = 60, L = 20
TL113
0.006 λ, 41.75 Ω
TL114
W = 1.524, L = 1.270
W = 60, L = 50
W1 = 3.048, W2 = 0.762, W3 = 3.048,
W4 = 0.762
W1 = 120, W2 = 30, W3 = 120,
W4 = 30
TL115
0.016 λ, 51.98 Ω
W = 1.087, L = 3.264
W = 43, L = 129
TL116
0.044 λ, 51.98 Ω
W = 1.087, L = 9.093
W = 43, L = 358
W1 = 1.270, W2 = 5.283, Offset = –2.007
W1 = 50, W2 = 208, Offset = –79
Output
TL201
TL202
W1 = 5.283, W2 = 5.283, Offset = 0.000
W1 = 208, W2 = 208, Offset = 0
TL203
0.016 λ, 15.92 Ω
W1 = 5.283, W2 = 5.283, W3 = 3.023
W1 = 208, W2 = 208, W3 = 119
TL204
0.007 λ, 4.80 Ω
W = 19.850, L = 1.270
W = 782, L = 50
TL205
W1 = 19.812, W2 = 19.812, Offset = 7.264 W1 = 780, W2 = 780, Offset = 286
0.066 λ, 47.12 Ω
W = 1.270, L = 13.467
TL207
0.002 λ, 41.75 Ω
W = 1.524, L = 0.508
W = 60, L = 20
TL208, TL210
0.004 λ, 51.98 Ω
W1 = 1.087, W2 = 1.087, W3 = 0.813
W1 = 43, W2 = 43, W3 = 32
TL206
TL209
W = 50, L = 530
W1 = 1.270, W2 = 1.270, Offset = 10.566
W1 = 50, W2 = 50, Offset = 416
TL211
0.089 λ, 51.98 Ω
W = 1.087, L = 18.313
W = 43, L = 721
TL212
0.007 λ, 41.75 Ω
W = 1.524, L = 1.524
W = 60, L = 60
TL213
0.007 λ, 41.75 Ω
W1 = 1.524, W2 = 1.524, W3 = 1.524
W1 = 60, W2 = 60, W3 = 60
TL214
0.004 λ, 25.04 Ω
W1 = 3.048, W2 = 3.048, W3 = 0.762
W1 = 120, W2 = 120, W3 = 30
W1 = 1.087, W2 = 3.048
W1 = 43, W2 = 120
TL215
TL216
0.009 λ, 25.04 Ω
W = 3.048, L = 1.778
W = 120, L = 70
TL217
0.006 λ, 63.89 Ω
W = 0.762, L = 1.270
W = 30, L = 50
TL218
0.002 λ, 51.98 Ω
W = 1.087, L = 0.356
W = 43, L = 14
TL219
0.040 λ, 41.75 Ω
W = 1.524, L = 8.204
W = 60, L = 323
TL220
0.006 λ, 41.75 Ω
W1 = 1.524, W2 = 1.524, W3 = 1.270
W1 = 60, W2 = 60, W3 = 50
TL221
0.006 λ, 47.12 Ω
W = 1.270, L = 1.191
W = 50, L = 47
TL222
0.035 λ, 47.12 Ω
W = 1.270, L = 7.290
W = 50, L = 287
TL223
0.014 λ, 15.92 Ω
W = 5.283, L = 2.667
W = 208, L = 105
TL224
0.012 λ, 51.98 Ω
W = 1.087, L = 2.502
W = 43, L = 99
TL225
0.016 λ, 51.98 Ω
W = 1.087, L = 3.264
W = 43, L = 129
TL226
0.006 λ, 47.12 Ω
W1 = 1.270, W2 = 1.270, W3 = 1.270
W1 = 50, W2 = 50, W3 = 50
Data Sheet
9 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Two-carrier WCDMA 3GPP Drive-up
VDD = 28 V, IDQ = 150 mA, ƒ = 2140 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
VDD = 28 V, IDQ = 150 mA, ƒ = 2140 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
40
Gain
30
15
20
14
10
Efficiency
28
30
32
-15
35
-20
30
34
36
-25
25
-30
20
-35
15
-40
10
IMD Low
5
ACPR
38
0
32
33
34
35
36
37
38
Output Power (dBm)
Output Power (dBm)
Two-tone Drive-up
Two-tone Drive-up
VDD = 28 V, IDQ = 150 mA,
VDD = 28 V, IDQ = 150 mA,
ƒ1 = 2139.05 MHz, ƒ2 = 2140.05 MHz
ƒ1 = 2139.05 MHz, ƒ2 = 2140.05 MHz
-15
60
-20
50
18
50
40
-30
30
Efficiency
-35
Gain (dB)
-25
Efficiency (%)
17
IMD (dBc)
IMD Up
Efficiency
-50
0
26
40
-45
13
24
-10
16
30
Efficiency
15
20
40
Gain
Efficiency (%)
16
IMD & ACPR (dBc)
Gain (dB)
17
50
Drain Efficiency (%)
18
Two-carrier WCDMA 3GPP
Drain Efficiency (%)
Typical Performance, 2140 MHz (data taken in Infineon test fixture)
20
IMD3
-40
10
33
34 35
36 37
38 39
40 41
14
42 43
Output Power, PEP (dBm)
Data Sheet
10
36
37
38
39
40
41
42
43
Output Power, PEP (dBm)
10 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Typical Performance, 2140 MHz (cont.)
Two-tone Broadband
Gain, Efficiency & RL vs. Frequency
Small Signal CW
Gain & Input Return Loss
VDD = 28V, IDQ = 150 mA, Avg. PEP = 12 W,
tone pacing = 100 kHz
VDD = 28 V, IDQ = 150 mA
-5
RL
50
-15
Efficiency
40
-25
30
-35
IMD3
Gain
20
10
2040
2080
-45
2120
2160
2200
18
Power Gain (dB)
60
0
-4
Gain
16
-8
14
-12
12
-16
IRL
10
1990
-55
2240
2090
Input Return Loss (dB)
20
5
Return Loss (dB), IMD (dBc)
Gain / Efficiency (dB / %)
70
-20
2290
2190
Frequency (MHz)
Frequency (MHz)
Intermodulation Distortion
vs. Output Power
Intermodulation Distortion
vs. Tone Spacing
VDD = 28 V, IDQ = 150 mA,
ƒ1 = 2139.05 MHz, ƒ2 = 2140.05 MHz
VDD = 28 V, IDQ = 150 mA, ƒ = 2140 MHz,
PEP = 11.22 W
-25
-10
3rd Order
-30
-30
IMD (dBc)
IMD (dBc)
-20
3rd Order
-40
5th
-50
-35
5th
-40
-45
7th
-50
7th
-55
-60
33
34 35
36 37
38
39 40
41 42
0
43
40
60
80
100
Tone Spacing (MHz)
Output Power, PEP (dBm)
Data Sheet
20
11 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Typical Performance, 2140 MHz (cont.)
CW Performance
Gain & Efficiency vs. Output Power
CW Performance
Gain & Eff. vs. Output Power & VDD
VDD = 28 V, IDQ = 150 mA, ƒ = 2140 MHz
IDQ = 150 mA, ƒ = 2140 MHz
22
50
16.5
60
Gain
40
16
30
14
20
Power Gain (dB)
Efficiency
Gain
18
17.0
Drain Efficiency (%)
Gain (dB)
20
60
50
V DD = 32 V
V DD = 28 V
V DD = 24 V
16.0
15.5
40
30
15.0
Efficiency (%)
+85°C
+25°C
–30°C
20
Efficiency
12
14.5
10
30
32
34
36
38
40
42
10
30
44
32
34
36
38
40
42
Output Power (dBm)
Output Power (dBm)
Power Sweep, CW
Gain & Efficiency vs. Output Power
Two-tone Gain vs. Output Power
VDD = 28 V, ƒ1 = 2139.05 MHz, ƒ2 = 2140.05 MHz
VDD = 28 V, IDQ = 150 mA, ƒ = 2140 MHz
45
15
35
14
25
Efficiency
13
17.0
Power Gain (dB)
Gain
16
Gain (dB)
17.5
55
Drain Efficiency (%)
17
33 34
35 36
37
38 39
40 41
IDQ = 150 mA
16.0
IDQ = 100 mA
15.0
35
42
36
37
38
39
40
41
42
43
Output Power (dBm)
Output Power (dBm)
Data Sheet
16.5
15.5
15
32
IDQ = 200 mA
12 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Reference Circuit, 2140 MHz
VDD
28 V
R804
2000 Ohm
S5
8
C803
1000 pF
TL105
TL106
TL109
3
TL107
R805
10 Ohm S3
1
In
4
Out
NC
NC
2
3
6
7
5
C801
1000 pF
DCVS
V1
3
1
2
4
S2
L1
22 nH
R803
510 Ohm
C802
1000 pF
R801
1200 Ohm
2
1
C106
6.2 pF
R802
1300 Ohm
TL110
C107
6.2 pF
C
4
S4
S
B
3
E
R101
10 Ohm
TL116
TL112
C104
12 pF
TL113
TL118
RF_IN
2
TL114
TL104
TL117
TL111
2
1
1
3
a
2 2 0 12 1
TL102
2
− v 4
_ b di n
_2 1 4 0
_ 01
C105
3.6 pF
TL115
TL108
3
1
m
3
2
− 05 − 2 01 0
GATE DUT
1
3
4
C103
3.6 pF
Er=3.48
H=20 mil
RO/RO4350B1
4
TL101
TL103
C102
6.2 pF
C101
6.2 pF
Reference circuit input schematic for ƒ = 2140 MHz
TL217
TL216
TL215
TL218
TL223
TL219
TL222
C205
100000 pF
TL229
TL224
TL230
2
3
1
C207
12 pF
TL226
TL228
1
C204
2200000 pF
3
2
TL227
TL225
2
3
1
TL214
TL213
2
TL220
TL221
1
a 2 2 0 1 2 1
m
− v 4 _
bd out
_
2 1 4 0
_ 0 1
− 0 7 − 2 0 1 0
VDD
28 V
3
2
1
3
TL206
R201
0000 Ohm
C206
2.7 pF
TL207
TL211
TL210
DRAIN DUT
TL231
TL208
TL209
3
2
TL212
TL205
1
1
2
TL232
TL204
2
TL203
3
1
1
3
2
3
TL201
C208
12 pF
TL202
RF_OUT
4
C203
2.7 pF
C202
2.7 pF
C201
1.7 pF
Reference circuit output schematic for ƒ = 2140 MHz
Data Sheet
13 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Reference Circuit, 2140 MHz (cont.)
C803
C802
R802 C802
+
C205
S5
R804
R801
S4
C204
C207
R803
S3
R805
C106 C107
S2
L1
R101
R201
C206
DUT
C104
C103
C105
C102 C101
C203 C202
C201
RO4350, .020
PTFA220121M
C208
(73)
Reference circuit assembly diagram (not to scale)*
* Gerber Files for this circuit available on request
Data Sheet
14 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Reference Circuit, 2140 MHz (cont.)
Circuit Assembly Information
DUT
PCB
PTFA220121M
LTN/PTFA220121M
Component
LDMOS Transistor
0.508 mm [.020"] thick, εr = 3.48
Rogers 4350
1 oz. copper
Description
Suggested Manufacturer
P/N
C101, C102, C106,
C107
Chip capacitor, 6.2 pF
ATC
ATC100A6R2CW150X
C103, C105
Chip capacitor, 3.6 pF
ATC
ATC100A3R6CW150X
C104
Chip capacitor, 12 pF
ATC
ATC100A120JW150X
C801, C802, C803
Chip capacitor, 1000 pF
Digi-Key
PCC1772CT-ND
L1
Inductor, 22 nH
Coilcraft
0805HT-22NX_BG
R101, R805
Resistor, 10 Ω
Digi-Key
P10ECT-ND
R801
Resistor, 1200 Ω
Digi-Key
P1.2KECT-ND
R802
Resistor, 1300 Ω
Digi-Key
P1.3KECT-ND
R803
Resistor, 510 Ω
Digi-Key
P510ECT-ND
R804
Resistor, 2000 Ω
Digi-Key
P2.0KECT-ND
S2
EMI Suppression Capacitor
Murata
NFM18PS105R0J3
S3
Potentiometer, 2k Ω
Digi-Key
3224W-202ECT-ND
S4
Transistor
Infineon Technologies
BCP56
S5
Voltage regulator
National Semiconductor
LM7805
C201
Chip capacitor, 1.7 pF
ATC
ATC100A1R7CW150X
C202, C203, C206
Chip capacitor, 2.7 pF
ATC
ATC100A2R7CW150X
C204
Chip capacitor, 2.2 µF
Digi-Key
445-1474-2-ND
C205
Chip capacitor, 0.1 µF
Digi-Key
PCC104BCT-ND
C207, C208
Chip capacitor, 12 pF
ATC
ATC100A120JW150X
R201
Resistor, 0 Ω
Digi-Key
P0.0KECT-ND
Input
Output
Data Sheet
15 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Reference Circuit, 2140 MHz (cont.)
Electrical Characteristics at 2140 MHz
Transmission
Electrical
Line
Characteristics
Dimensions: mm
Dimensions: mils
Input
TL101, TL103
0.000 λ, 144.35 Ω
W = 0.025, L = 0.000
W = 1, L = 0
TL102
0.019 λ, 51.98 Ω
W = 1.087, L = 1.575
W = 43, L = 62
W1 = 1.087, W2 = 0.813, W3 = 1.087,
W4 = 0.813
W1 = 43, W2 = 32, W3 = 43,
W4 = 32
TL104, TL111
TL105
W = 1.524
W = 60
TL106
0.018 λ, 54.17 Ω
W = 1.016, L = 1.524
W = 40, L = 60
TL107
0.061 λ, 41.75 Ω
W = 1.524, L = 5.080
W = 60, L = 200
TL108
0.022 λ, 25.04 Ω
W = 3.048, L = 1.778
W = 120, L = 70
TL109
0.006 λ, 41.75 Ω
W = 1.524, L = 0.508
W = 60, L = 20
TL110
0.015 λ, 41.75 Ω
W = 1.524, L = 1.270
W = 60, L = 50
TL112
0.039 λ, 51.98 Ω
W = 1.087, L = 3.264
W = 43, L = 129
TL113
0.180 λ, 51.98 Ω
W = 1.087, L = 15.291
W = 43, L = 602
TL114
0.039 λ, 51.98 Ω
W = 1.087, L = 3.302
W = 43, L = 130
TL115
0.009 λ, 25.04 Ω
W1 = 3.048, W2 = 3.048, W3 = 0.762
W1 = 120, W2 = 120, W3 = 30
TL116, TL117
0.000 λ, 144.35 Ω
W = 0.025, L = 0.000
W = 1, L = 0
TL118
0.010 λ, 51.98 Ω
W1 = 1.087, W2 = 1.087, W3 = 0.813
W1 = 43, W2 = 43, W3 = 32
See next page for more Reference Circuit information
Data Sheet
16 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Reference Circuit, 2140 MHz (cont.)
Electrical Characteristics at 2140 MHz
Transmission
Electrical
Line
Characteristics
Dimensions: mm
Dimensions: mils
Output
TL201
0.161 λ, 51.98 Ω
W = 1.087, L = 13.627
W = 43, L = 537
TL202
0.039 λ, 51.98 Ω
W = 1.087, L = 3.264
W = 43, L = 129
TL203, TL205
0.010 λ, 51.98 Ω
W1 = 1.087, W2 = 1.087, W3 = 0.813
W1 = 43, W2 = 43, W3 = 32
TL204
0.075 λ, 51.98 Ω
W = 1.087, L = 6.375
W = 43, L = 251
TL206
0.006 λ, 41.75 Ω
W = 1.524, L = 0.508
W = 60, L = 20
TL207
0.018 λ, 41.75 Ω
W = 1.524, L = 1.524
W = 60, L = 60
TL208
0.009 λ, 25.04 Ω
W1 = 3.048, W2 = 3.048, W3 = 0.762
W1 = 120, W2 = 120, W3 = 30
W1 = 1.087, W2 = 3.048
W1 = 43, W2 = 120
TL209
TL210
0.022 λ, 25.04 Ω
W = 3.048, L = 1.778
W = 120, L = 70
TL211
0.015 λ, 63.89 Ω
W = 0.762, L = 1.270
W = 30, L = 50
TL212
0.012 λ, 51.98 Ω
W = 1.087, L = 1.041
W = 43, L = 41
TL213
0.018 λ, 41.75 Ω
W1 = 1.524, W2 = 1.524, W3 = 1.524
W1 = 60, W2 = 60, W3 = 60
TL214
0.133 λ, 47.12 Ω
TL215
TL216
0.017 λ, 4.80 Ω
W = 1.270, L = 11.186
W = 50, L = 440
W1 = 0.020, W2 = 0.020, Offset = 0.007
W1 = 20, W2 = 780, Offset = 286
W = 19.850, L = 1.270
W = 782, L = 50
TL217
W1 = 0.001, W2 = 0.001, Offset = 0.011
W1 = 1, W2 = 50, Offset = 416
TL218
W1 = 0.005, W2 = 0.005, Offset = 0.000
W1 = 5, W2 = 208, Offset = 0
TL219
W1 = 0.001, W2 = 0.005, Offset = –0.002
W1 = 1, W2 = 208, Offset = –79
TL220
0.098 λ, 41.75 Ω
W = 1.524, L = 8.204
W = 60, L = 323
TL221
0.015 λ, 41.75 Ω
W1 = 1.524, W2 = 1.524, W3 = 1.270
W1 = 60, W2 = 60, W3 = 50
TL222
0.087 λ, 47.12 Ω
W = 1.270, L = 7.290
W = 50, L = 287
TL223
0.071 λ, 15.92 Ω
W = 5.283, L = 5.690
W = 208, L = 224
TL224
0.000 λ, 41.75 Ω
W = 1.524, L = 0.000
W = 60, L = 0
TL225
0.014 λ, 47.12 Ω
W = 1.270, W2 = 1.270, W3 = 1.191
W = 50, W2 = 50, W3 = 47
TL226
0.009 λ, 47.12 Ω
W = 1.270, W2 = 1.270, W3 = 0.762
W = 50, W2 = 50, W3 = 30
TL227
0.000 λ, 63.89 Ω
W = 0.762, L = 0.000
W = 30, L = 0
TL228
0.000 λ, 25.04 Ω
W = 3.048, L = 0.000
W = 120, L = 0
TL229
0.017 λ, 47.12 Ω
W = 1.270, L = 1.422
W = 50, L = 56
TL230
0.018 λ, 47.12 Ω
W1 = 1.270, W2 = 1.270, W3 = 1.524
W1 = 50, W2 = 50, W3 = 60
TL231
0.000 λ, 144.35 Ω
W = 0.025, L = 0.000
W = 1, L = 0
W1 = 1.087, W2 = 0.813, W3 = 1.087
W4 = 0.813
W1 = 43, W2 = 32, W3 = 43,
W4 = 32
TL232
Data Sheet
17 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Package Outline Specifications
Package PG-SON-10
0.54
[.021] 2 PLACES
5X .320
[.0126] 2 PLACES
4.00
[.157]
6
7
8
9
10
.815
[.0321]
4.00
[.157]
2.97
[.117]
S
2.37
[.093]
5X .515
[.0203] 2 PLACES
INDEX
MARKING
5
4
3
2
1
INDEX
MARKING
4X 0.65
[.026] 2 PLACES
TOP VIEW
0.30
[.012]
3.40
[.134]
BOTTOM VIEW
0.38
[.015] BOTH SIDES
1.42
[.056]
PG-SON-10_po_02-19-2010
0.05 [.002]
SIDE VIEW
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.10 [.004] unless specified otherwise.
4. Package dimension: 4.00 mm x 4.00 mm x 1.42 mm.
5. Pins: S = source, 1 – 5 = gate, 6 – 10 = drain.
6. NiPdAu plating (gold top layer): 0.025 – 0.127 micron [1 – 5 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
18 of 19
Rev. 07, 2010-04-15
PTFA220121M V4
Confidential, Limited Internal Distribution
Revision History:
2010-04-15
2010-02-23, Data Sheet
Previous Version:
Page
2
Data Sheet
Subjects (major changes since last revision)
Added moisture sensitivity level table
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Edition 2010-04-15
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of conditions or
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For further information on technology, delivery terms and conditions and prices, please contact the nearest
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Data Sheet
19 of 19
Rev. 07, 2010-04-15