DIODES DMP3035LSS

DMP3035LSS
SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Features
Mechanical Data
•
•
•
•
•
•
•
•
•
•
Low On-Resistance
•
14mΩ @ VGS = -20V
•
18mΩ @ VGS = -10V
•
36mΩ @ VGS = -4.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
•
•
•
•
•
•
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072 grams (approximate)
SO-8
S
D
S
D
S
D
G
D
TOP VIEW
Internal Schematic
TOP VIEW
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Units
V
V
IDM
Value
-30
±25
-11
-8
-80
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Symbol
PD
RθJA
Value
2.0
60
Unit
W
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Symbol
VDSS
VGSS
Steady
State
TA = 25°C
TA = 70°C
ID
Pulsed Drain Current (Note 3)
A
A
Thermal Characteristics
Notes:
1.
2.
3.
4.
2
Device mounted on 1 in. FR-4 board with 2 oz. Copper, in a still-air environment with TA = 25°C.
No purposefully added lead.
Repetitive rating, pulse width limited by junction temperature.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMP3035LSS
Document number: DS31443 Rev. 6 - 2
1 of 5
www.diodes.com
August 2009
© Diodes Incorporated
DMP3035LSS
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
-30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1
±100
±800
V
μA
-1
-2
V
⎯
⎯
11
15
27
14
18
36
mΩ
Gate-Source Leakage
IGSS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(th)
nA
Static Drain-Source On-Resistance
RDS (ON)
Forward Transconductance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
gfs
VSD
⎯
-0.5
12
⎯
⎯
-1.1
S
V
Ciss
Coss
Crss
RG
⎯
⎯
⎯
⎯
1655
286
240
2.3
⎯
⎯
⎯
⎯
pF
pF
pF
Ω
Qg
⎯
⎯
Qgs
Qgd
td(on)
tr
td(off)
tf
⎯
⎯
⎯
⎯
⎯
⎯
15.3
30.7
3.5
7.9
5.1
8
46
30
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Test Condition
VGS = 0V, ID = -250μA
VDS = -30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -20V, ID = -11A
VGS = -10V, ID = -8A
VGS = -4.5V, ID = -5A
VDS = -10V, ID = -12A
VGS = 0V, IS = -2A
VDS = -20V, VGS = 0V
f = 1.0MHz
VGS = 0V, VDS = 0V, f = MHz
nC
VDS = -15V, VGS = -4.5V, ID = -8A
VDS = -15V, VGS = -10V, ID = -8A
VDS = -15V, VGS = -10V, ID = -8A
VDS = -15V, VGS = -10V, ID = -8A
ns
VGS = -10V, VDS = -15V,
RD = 15Ω, RG = 6Ω
5. Short duration pulse test used to minimize self-heating effect.
20
20
VGS = -10V
VGS = -4.0V
16
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
16
VGS = -3.0V
12
12
VGS = -2.5V
8
4
8
TA = 150°C
TA = 125°C
4
T A = 25°C
T A = -55°C
VGS = -2.0V
VGS = -1.5V
0
0
1
2
3
4
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
DMP3035LSS
Document number: DS31443 Rev. 6 - 2
TA = 85°C
0
5
2 of 5
www.diodes.com
1
1.5
2
2.5
3
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
3.5
August 2009
© Diodes Incorporated
0.03
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
DMP3035LSS
0.025
0.02
VGS = -4.5V
0.015
VGS = -10V
0.01
0.005
0
0
6
12
18
24
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
TA = 125°C
0.025
T A = 85°C
0.02
TA = 25°C
0.015
TA = -55°C
0.01
0.005
0
0
6
12
18
24
-ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
30
10,000
f = 1MHz
1.4
VGS = -10V
ID = -10A
C, CAPACITANCE (pF)
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
TA = 150°C
30
1.6
1.2
VGS = -4.5V
ID = -5A
1.0
Ciss
1,000
Coss
0.8
Crss
0.6
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 Normalized On-Resistance vs. Ambient Temperature
100
2.4
20
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Total Capacitance
30
2.0
16
-IS, SOURCE CURRENT (A)
-VGS(TH), GATE THRESHOLD VOLTAGE (V)
0.03
1.6
TA = 25°C
12
1.2
ID = -250µA
0.8
0.4
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
DMP3035LSS
Document number: DS31443 Rev. 6 - 2
3 of 5
www.diodes.com
8
4
0
0
0.2
0.4
0.6
0.8
1
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
August 2009
© Diodes Incorporated
DMP3035LSS
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 87°C/W
D = 0.02
0.01
P(pk)
D = 0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
D = 0.005
D = Single Pulse
0.001
0.0001
t1
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (s)
100
1,000
10,000
Fig. 9 Transient Thermal Response
Ordering Information
(Note 6)
Part Number
DMP3035LSS-13
Notes:
Case
SO-8
Packaging
2500/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Top View
8
5
Logo
P3035LS
Part no.
YY WW
1
Xth week: 01~52
Year : "07" =2007
"08" =2008
4
0.254
Package Outline Dimensions
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
7°~9°
h
45°
A2 A A3
Detail ‘A’
b
e
D
DMP3035LSS
Document number: DS31443 Rev. 6 - 2
4 of 5
www.diodes.com
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
0°
8°
θ
All Dimensions in mm
August 2009
© Diodes Incorporated
DMP3035LSS
Suggested Pad Layout
X
Dimensions
X
Y
C1
C2
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
DMP3035LSS
Document number: DS31443 Rev. 6 - 2
5 of 5
www.diodes.com
August 2009
© Diodes Incorporated