GA200HS60S1PbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK (Standard Speed IGBT), 200 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level INT-A-PAK BENEFITS PRODUCT SUMMARY • Increased operating efficiency VCES 600 V IC DC 480 A VCE(on) at 200 A, 25 °C 1.13 V • Direct mounting to heatsink • Performance optimized as output inverter stage for TIG welding machines ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage SYMBOL TEST CONDITIONS MAX. UNITS 600 V VCES Continuous collector current IC TC = 25 °C 480 TC = 116 °C 200 Pulsed collector current ICM 800 Peak switching current ILM 800 Gate to emitter voltage VGE RMS isolation voltage VISOL Maximum power dissipation PD A ± 20 Any terminal to case, t = 1 minute 2500 TC = 25 °C 830 TC = 85 °C 430 V W ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage SYMBOL VBR(CES) Collector to emitter voltage VCE(on) Gate threshold voltage VGE(th) Collector to emitter leakage current ICES Gate to emitter leakage current IGES Document Number: 94362 Revision: 03-May-10 TEST CONDITIONS VGE = 0 V, IC = 1 mA MIN. TYP. MAX. 600 - - VGE = 15 V, IC = 200 A - 1.13 1.21 VGE = 15 V, IC = 200 A, TJ = 125 °C - 1.08 1.18 IC = 0.25 mA 3 4.5 6 VGE = 0 V, VCE = 600 V - 0.025 1 VGE = 0 V, VCE = 600 V, TJ = 125 °C - - 10 VGE = ± 20 V - - ± 250 For technical questions, contact: [email protected] UNITS V mA nA www.vishay.com 1 GA200HS60S1PbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK (Standard Speed IGBT), 200 A SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge Qg Gate to emitter charge Qge Gate to collector charge Qgc Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Ets Turn-on switching loss Eon Turn-off switching loss Eoff TEST CONDITIONS MIN. TYP. MAX. IC = 200 A - 1600 1700 VCC = 400 V - 260 340 VGE = 15 V - 580 670 IC = 200 A, VCC = 480 V, VGE = 15 V Rg = 10 Ω Freewheeling diode: 30EPH06, TJ = 25 °C - 30 - - 50 - - 80 - - 34 - - 104 - - 138 151 - 32 500 - - 2080 - - 380 - IC = 200 A, VCC = 480 V, VGE = 15 V Rg = 10 Ω Freewheeling diode: 30EPH06, TJ = 125 °C Total switching loss Ets Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres VGE = 0 V VCC = 30 V f = 1.0 MHz UNITS nC mJ mJ pF THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Operating junction temperature range SYMBOL MIN. TYP. MAX. TJ - 40 - 150 Storage temperature range TStg - 40 - 125 Junction to case per leg RthJC - - 0.15 Case to sink RthCS - 0.1 - case to heatsink - - 4 case to terminal 1, 2, 3 - - 3 - 185 - Mounting torque 1000 IC - Collector to Emitter Current (A) IC - Collector to Emitter Current (A) Weight VGE = 15 V 500 µs pulse width TJ = 125 °C 100 TJ = 25 °C 10 0.6 0.8 1.0 1.2 1.4 VCE - Collector to Emitter Voltage (V) Fig. 1 - Typical Output Characteristics www.vishay.com 2 1.6 UNITS °C °C/W Nm g 1000 100 TJ = 125 °C 10 TJ = 25 °C 1 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 VGE - Gate to Emitter Voltage (V) Fig. 2 - Typical Transfer Characteristics For technical questions, contact: [email protected] Document Number: 94362 Revision: 03-May-10 GA200HS60S1PbF 160 50 140 45 Switching Losses (mJ) TC - Case Temperature (°C) "Half-Bridge" IGBT INT-A-PAK Vishay High Power Products (Standard Speed IGBT), 200 A 120 100 80 60 40 Eoff typical 40 TJ = 25 °C VCE = 480 V VGE = 15 V IC = 200 A 35 Eon typical 30 25 Freewheeling diode 30EPH06 20 20 0 0 100 200 300 400 0 500 10 Fig. 3 - Case Temperature vs. Maximum Collector Current 40 50 Fig. 6 - Typical Switching Losses vs. Gate Resistance 80 1.6 1.4 1.2 200 A 120 A 1.0 TJ = 125 °C VCE = 480 V VGE = 15 V VGE = 10 Ω 70 400 A Switching Losses (mJ) VCE - Collector to Emitter Voltage (V) 30 RG - Gate Resistance (Ω) Maximum DC Collector Current (A) 60 50 Eoff typical Freewheeling diode 30EPH06 40 30 20 Eon typical 10 0 0.8 20 40 60 80 100 120 140 160 50 75 100 125 150 175 200 IC - Collector to Emitter Current (A) TJ - Junction Temperature (°C) Fig. 4 - Typical Collector to Emitter Voltage vs. Junction Temperature Fig. 7 - Typical Switching Losses vs. Collector to Emitter Current 16 VGE - Gate to Emitter Voltage (V) 20 3 3 14 6, 7 12 6 7 10 1 8 1 Typical value 6 4 4, 5 4 5 2 2 0 0 300 600 900 1200 1500 2 1800 QG - Total Gate Charge (nC) Functional Diagram Electrical Diagram Fig. 5 - Typical Gate Charge vs. Gate to Emitter Voltage Document Number: 94362 Revision: 03-May-10 For technical questions, contact: [email protected] www.vishay.com 3 GA200HS60S1PbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK (Standard Speed IGBT), 200 A ORDERING INFORMATION TABLE Device code GA 200 H S 60 S 1 PbF 1 2 3 4 5 6 7 8 1 - Essential part number IGBT modules 2 - Current rating (200 = 200 A) 3 - Circuit configuration (H = Half bridge without f/w diode) 4 - INT-A-PAK 5 - Voltage code (60 = 600 V) 6 - Speed/type (S = Standard speed IGBT) 7 - Assy location Italy 8 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 4 www.vishay.com/doc?95067 For technical questions, contact: [email protected] Document Number: 94362 Revision: 03-May-10 Outline Dimensions Vishay Semiconductors INT-A-PAK IGBT/Thyristor 29 (1.15) 28 (1.10) 9 (0.33) 30 (1.18) 7 (0.28) DIMENSIONS in millimeters (inches) Ø 6.5 (0.25 DIA) 80 (3.15) 23 (0.91) 7 6 4 5 (0.20) 5 23 (0.91) 1 3 screws M6 x 10 2 2.8 x 0.8 (0.11 x 0.03) 14.5 (0.57) 35 (1.38) 17 (0.67) 3 66 (2.60) 37 (1.44) 94 (3.70) Document Number: 95067 Revision: 15-Feb-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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