HTSEMI PT4435

PT4435
30V P-Channel Enhancement Mode MOSFET
VDS= -30V
RDS(ON), [email protected], [email protected] = 18mΩ
RDS(ON), [email protected], [email protected] = 30mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
D
D
8
7
1
F
6
2
S
REF.
A
B
C
D
E
D
S
3
S
D
5
4
G
Millimeter
Min.
Max.
REF.
Millimeter
Min.
Max.
5.80
4.80
3.80
0°
0.40
6.20
5.00
4.00
8°
0.90
M
H
L
J
K
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
0.19
0.25
G
1.27 TYP.
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Symbol
Limit
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
± 20
ID
-10.5
IDM
-50
Parameter
Continuous Drain Current
Pulsed Drain Current
o
TA = 25 C
Maximum Power Dissipation
o
TA = 75 C
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted)
RθJA
Unit
V
A
2.5
W
1.2
o
-55 to 150
50
o
C
C/W
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05
PT4435
30V P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
Symbol
Test Condition
Min.
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250uA
-30
Drain-Source On-State Resistance
RDS(on)
VGS = -10V, ID = -10.5A
15.0
18.0
Drain-Source On-State Resistance
RDS(on)
VGS = -4.5V, ID = -6.0A
20.0
30.0
Gate Threshold Voltage
VGS(th)
VDS =VGS, ID = -250uA
-1.4
-3
V
Zero Gate Voltage Drain Current
IDSS
VDS = -24V, VGS = 0V
-1
uA
Gate Body Leakage
IGSS
VGS = ± 20V, VDS = 0V
± 100
nA
gfs
VDS = -10V, ID = -5A
Parameter
Typ.
Max.
Unit
Static
Forward Transconductance
-1
V
21
mΩ
S
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = -15V, ID = -9.1A
VGS = 10V
37.2
9.84
nC
7.52
VDD = -15V, RL=15Ω
ns
ID = -1A, VGEN = -10V
RG = 6Ω
VDS = 8V, VGS = 0V
f = 1.0 MHz
1740
225
pF
225
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
IS
VSD
A
IS = -2.1A, VGS = 0V
0.78
V
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
2 JinYu
semiconductor
www.htsemi.com
Date:2011/05
PT4435
30V P-Channel Enhancement Mode MOSFET
3
JinYu
semiconductor
www.htsemi.com
Date:2011/05