PJSMDA05-6 SERIES HEX TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION P This 6 TVS/Zener Array family have been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5V, 12V, 15V and 24V. This TVS array offers an integrated solution to protect up to 6 data lines where the board space is a premium. SPECIFICATION FEATURES 1 8 350W Power Dissipation (8x20µsec Waveform) Low Leakage Current, Maximum of 5µA at rated voltage 2 7 GND Very Low Clamping Voltage 3 6 GND IEC61000-4-2 ESD 20kV air, 15kV Contact Compliance Packaged in the Industry Standard SOIC-8 4 5 SOIC-8 APPLICATIONS 5 RS-232C or RS-422 Communication ports GPIB/IEEE 485 Ports 4 8 Portable Instrumentation 1 MAXIMUM RATINGS (Per Device) Symbol Value Units Peak Pulse Power (8x20µsec Waveform) P pp 350 W ESD Voltage (HBM) V ESD >25 kV Operating Temperature Range TJ -50 to +125 °C Storage Temperature Range Tstg -50 to +150 °C Typical Max Units 5 V Rating ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C PJSMDA05-6 Parameter Reverse Stand-Off Voltage Conditions Symbol Min VWRM Reverse Breakdown Voltage VBR Reverse Leakage Current IR VR = 5V 5 µA Clamping Voltage (8x20µsec) Vcl I pp = 5A 9.8 V Clamping Voltage (8x20µsec) Vcl I pp = 24A 13 V Off State Junction Capacitance Cj 0 Vdc Bias f = 1MHz Between I/O pins and pin 6, 7 225 pF Off State Junction Capacitance Cj 5 Vdc Bias f = 1MHz Between I/O pins and pin 6, 7 125 pF 7/1/2009 I BR = 1mA Page 1 6 V www.panjit.com PJSMDA05-6 SERIES ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C PJSMDA12-6 P Parameter Reverse Stand-Off Voltage Symbol Conditions Min Typical VWRM Reverse Breakdown Voltage VBR I BR = 1mA Reverse Leakage Current IR VR = 12V Clamping Voltage (8x20µsec) Vcl I pp = 5A Clamping Voltage (8x20µsec) Vcl I pp = 15A Off State Junction Capacitance Cj 0 Vdc Bias f = 1MHz Between I/O pins and pin 6, 7 Max Units 12 V 13.3 V 5 µA 20 V 25 V 100 pF PJSMDA15-6 Parameter Reverse Stand-Off Voltage Symbol Conditions Min Typical VWRM Reverse Breakdown Voltage VBR I BR = 1mA Reverse Leakage Current IR VR = 15V Clamping Voltage (8x20µsec) Vcl Clamping Voltage (8x20µsec) Off State Junction Capacitance Max Units 15 V 16.7 V 5 µA I pp = 5A 24 V Vcl I pp = 12A 29 V Cj 0 Vdc Bias f = 1MHz Between I/O pins and pin 6, 7 80 pF Max Units 24 V PJSMDA24-6 Parameter Reverse Stand-Off Voltage Symbol Conditions VWRM Reverse Breakdown Voltage VBR I BR = 1mA Reverse Leakage Current IR VR = 24V Clamping Voltage (8x20µsec) Vcl Clamping Voltage (8x20µsec) Vcl Off State Junction Capacitance 7/1/2009 Min Cj Typical 26.7 V 5 µA I pp = 5A 40 V I pp = 8A 44 V 0 Vdc Bias f = 1MHz Between I/O pins and pin 6, 7 Page 2 60 pF www.panjit.com PJSMDA05-6 SERIES TYPICAL CHARACTERISTICS TJ = 25°C unless otherwise noted Surge Pulse Waveform Definition 110 100 90 80 70 60 50 40 30 20 10 0 1000 50% of Ipp @ 20µs Rise time 10-90% - 8µs 0 5 10 15 20 25 30 Peak Pulse Power - Ppp (W) Percent of Ipp Non-Repetitive Peak Pulse Power vs Pulse Time Pulse Waveform 100 10 1 0.1 0.01 1 10 100 1000 tim e, µsec Pulse Duration, µsec Clamping Voltage vs. Peak current Off-State Capacitance per Device - 1MHz 45 40 35 30 25 20 15 10 5 0 24 PJSMS24 PJSMS 1515 PJSMS 1212 PJS05 MS05 0 5 10 15 20 25 30 Ipp, A (8/20µsec) 7/1/2009 PJSMDAxx-6 220 Capacitance, pF Clamping voltage, V PJSMDAxx-6 200 180 160 140 120 100 80 60 40 20 0 05 PJSMS05 12 15 5 PJSMS1 PJSMS12 0 1 2 24 PJSMS24 3 4 Bias, Vdc Page 3 www.panjit.com 5 PJSMDA05-6 SERIES TYPICAL APPLICATION EXAMPLE AND PACKAGE DIMENSIONS RS232 Pinout Pin Name RS232 V.24 Dir Description 1 CD CF 109 Carrier Detect 2 RXD BB 104 Receive Data 3 TXD BA 103 Transmit Data 4 DTR CD 108.2 Data Terminal Ready 5 GND AB 102 System Ground 6 DSR CC 107 Data Set Ready 7 RTS CA 105 Request to Send 8 CTS CB 106 Clear to Send 9 RI CE 125 Ring Indicator Pin2 Pin3 Pin4 Pin6 Pin7 Pin8 GND Dimensions in inches 7/1/2009 Page 4 www.panjit.com