PJSMDA05 SERIES QUAD TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION This Quad TVS/Zener Array family have been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in CMOS circuity operating at 5V,12V,15V and 24V. This TVS array offers an integrated sloution to protect up to 4 data lines where the board space is a premium. PRELIMINARY FEATURES • 350W Power Dissipation (8/20μs Waveform) • Low Leakage Current, Maximum of 5μA at rated voltage • Very Low Clamping Voltage • IEC61000-4-2 ESD 20kV air,15kV Contact Compliance • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOIC-08,Molded plastic over passivated junction • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.079 grams • Mounting Position : Any APPLICATIONS • RS-232C or RS-422 Communication ports • GPIB/IEEE 485 Ports • Portable Instrumentation 8 1 7 6 5 2 3 4 Fig.67 MAXIMUM RATINGS (Per Device) Ra t i ng S ym b o l Va lue Uni ts P e a k P uls e P o we r ( 8 /2 0 μ s Wa ve fo rm ) P PP 350 W E S D Vo lta g e ( HB M ) P e r M IL -S TD - 8 8 3 C V ESD >2 5 kV TJ - 5 0 t o +1 5 0 O C T S TG - 5 0 t o +1 5 0 O C O p e r a t i ng Te m p e r a t ure Ra ng e S to r a g e Te m p e r a t ur e Ra ng e REV.0.4-SEP.7.2009 PAGE . 1 PJSMDA05 SERIES ELECTRICAL CHARACTERISTICS (PER DEVICE) TJ = 25°C PJSMDA05 Marking DA5 Parameter Reverse Stand-Off Voltage PRELIMINARY Reverse Breakdown Voltage Symbol Condition Min. Typ. Max. Units - - 5 V I BR=1mA 6 - - V VRWM VBR Reverse Leakage Current IR VR=5V - - 5 μA Clamping Voltage (8/20μs) VC I PP=5A - - 9.8 V Clamping Voltage (8/20μs) VC I PP=24A - - 13 V Off State Junction Capacitance CJ 0 Vdc Bias f=1MHZ - 400 500 pF Off State Junction Capacitance CJ 5 Vdc Bias f=1MHZ - 200 250 pF Min. Typ. Max. Units - - 12 V 13.3 - - V PJSMDA12 Marking DA2 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Symbol Condition VRWM VBR I BR=1mA Reverse Leakage Current IR VR=5V - - 5 μA Clamping Voltage (8/20μs) VC I PP=5A - - 20 V Clamping Voltage (8/20μs) VC I PP=15A - - 25 V Off State Junction Capacitance CJ 0 Vdc Bias f=1MHZ - - 300 pF Min. Typ. Max. Units - - 15 V 16.7 - - V PJSMDA15 Marking DAA Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Symbol Condition VRWM VBR I BR=1mA Reverse Leakage Current IR VR=5V - - 5 μA Clamping Voltage (8/20μs) VC I PP=5A - - 24 V Clamping Voltage (8/20μs) VC I PP=12A - - 29 V Off State Junction Capacitance CJ 0 Vdc Bias f=1MHZ - - 200 pF Min. Typ. Max. Units - - 24 V 26.7 - - V PJSMDA24 Marking DA4 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Symbol Condition VRWM VBR I BR=1mA Reverse Leakage Current IR VR=5V - - 5 μA Clamping Voltage (8/20μs) VC I PP=5A - - 40 V Clamping Voltage (8/20μs) VC I PP=8A - - 44 V Off State Junction Capacitance CJ 0 Vdc Bias f=1MHZ - - 120 pF REV.0.4-SEP.7.2009 PAGE . 2 PJSMDA05 SERIES PRELIMINARY TYPICAL CHARACTERISTICS TJ = 25°C unless otherwise noted 500 PJSMDA05 400 300 PJSMDA12 PJSMDA15 200 PJSMDA24 100 0 REV.0.4-SEP.7.2009 0 5 10 15 20 25 PAGE . 3 PJSMDA05 SERIES PRELIMINARY MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 3K per 13" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.4-SEP.7.2009 PAGE . 4