PJSR05 Low Capacitance TVS and Diode Array DRAFT SPEC This diode array is configured to protect up to two data transmission lines acting as a line terminator, minimizing overshoot and undershoot conditions due to bus impedance as well as protect against over-voltage events as electrostatic discharges. Additionaly the TVS Device offers overvoltage transient protection between the operating voltage bus and ground plane. 3 4 2 SPECIFICATION FEATURES 1 Peak Power Dissipation of 350W 8/20µs Maximum Capacitance of 5.0pF at 0Vdc 1MHz Line-to-Ground I/O2 3 VREF 4 2 I/O1 1 GND Maximum Leakage Current of 1µA @ VRWM Industry Standard SMT Package SOT143 IEC61000-4-2, IEC61000-4-4 and IEC61000-4-5 Full Compliance 100% Tin Matte finish (LEAD-FREE PRODUCT) SOT143 APPLICATIONS USB 2.0 and Firewire Port Protection LAN/WLAN Access Point terminals Video Signal line protection I 2C Bus Protection MAXIMUM RATINGS Tj = 25°C Unless otherwise noted Rating Symbol Value Units Peak Pulse Power (8/20µs Waveform) P PPM 350 W Peak Pulse Current (8/20µs Waveform) I PP 17.5 A Operating Junction Temperature Range TJ -55 to +125 °C Storage Temperature Range Tstg -55 to +150 °C Soldering Temperature, t max = 10s TL 260 °C 12/1/2005 Page 1 www.panjit.com PJSR05 ELECTRICAL CHARACTERISTICS Parameter Reverse Stand-Off Voltage Symbol Tj = 25°C unless otherwise noted Conditions Min VWRM Typical Max Units 5 V DRAFT SPEC 6.2 Reverse Breakdown Voltage VBR I BR = 1mA Reverse Leakage Current IR VR = 5V 1 µA Clamping Voltage (8/20µs) Vc I pp = 1A 9.5 V Clamping Voltage (8/20µs) Vc I pp = 10A 12 V Clamping Voltage (8/20µs) Vc I pp = 17.5A 20 V Off State Junction Capacitance Cj 0 Vdc Bias f = 1MHz Between I/O pins and GND 5 pF 0 Vdc Bias f = 1MHz Between I/O pins 3 pF 12/1/2005 Page 2 V www.panjit.com PJSR05 PACKAGE DIMENSIONS - SOT143 DRAFT SPEC 12/1/2005 Page 3 www.panjit.com