PANJIT PJB24N10

PJB24N10
100V N-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), [email protected],[email protected]=24mΩ
• Low On Resistance
• Excellent Gate Charge x RDS(ON) Product ( FOM )
• Fully Characterized Avalanche Voltage and Current
• Specially Designed for AC Adapter, High-Frequency Switch
and Synchronous Rectification
• Component are in compliance with EU RoHS 2002/95/EC
directives
MECHANICAL DATA
• Case: TO-263 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
Drain
ORDERING INFORMATION
TYPE
MARKING
PACKAGE
PACKING
PJB24N10
B24N10
TO-263
800PCS/REEL
Gate
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA ME TE R
S ymb o l
Li mit
Uni ts
D ra i n-S o urc e Vo lta g e
V DS
100
V
Ga te - S o urc e Vo lta g e
V GS
+2 0
V
ID
42
A
ID M
160
A
PD
105
0 .8 4
W
T J ,T S TG
-5 5 to +1 5 0
E AS
680
Junction-to-Case Thermal Resistance
R θJ C
1 .2
O
C /W
Junction-to Ambient Thermal Resistance
R θJ A
6 2 .5
O
C /W
C o nti nuo us D ra i n C urre nt
P uls e d D ra i n C urre nt
1)
M a xi mum P o we r D i s s i p a ti o n
D e ra ti ng F a c to r
Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e
Avalanche Energy with Single Pulse
IAS=17A, VDD=80V, L=4.7mΗ
TA = 2 5 OC
O
C
mJ
Note: 1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
June 03, 2010-REV.00
PAGE . 1
PJB24N10
ELECTRICAL CHARACTERISTICS
P a ra m e te r
( TA=25OC unless otherwise noted )
S ymb o l
Te s t C o nd i ti o n
M i n.
Typ .
Ma x.
Uni ts
D r a i n- S o urc e B re a k d o wn Vo lta g e
B V D SS
V GS =0 V, I D =2 5 0 uA
100
-
-
V
Ga te Thre s ho ld Vo lta g e
V GS (th)
V D S =V GS , I D =2 5 0 uA
2 .0
-
4 .0
V
R D S ( o n)
VGS= 10V, I D= 30A
-
18.6
24
mΩ
I DSS
VDS=80V, VGS=0V
-
-
1
uA
I GS S
V GS =+ 2 0 V, V D S =0 V
-
-
+1 0 0
nΑ
-
6 0 .6
78
-
8 .2
-
S ta ti c
D ra i n-S o urc e On-S ta te
Re s i s ta nc e
Ze ro Ga te Vo lta g e D ra i n
C urre nt
Gate Body Leakage
Dynamic
To ta l Ga te C ha rg e
Qg
Ga te -S o urc e C ha rg e
Q
gs
Ga te -D ra i n C ha rg e
Q
gd
-
21.4
-
Turn-On D e la y Ti me
t
d (o n)
-
18.4
26
-
9.2
12
-
56
68
f
-
1 8 .8
26
-
1450
3200
-
155
200
-
110
165
Turn-On Ri s e Ti m e
t
Turn-Off D e la y Ti me
t
V D S = 5 0 V, ID =3 0 A ,
V GS =1 0 V
VDD=50V, I D =1A
V GS =1 0 V, RG=1.6Ω
r
d (o ff)
Turn-Off F a ll Ti m e
t
Inp ut C a p a c i ta nc e
C
i ss
Outp ut C a p a c i ta nc e
C
o ss
Re ve rs e Tra ns fe r
C a p a c i ta nc e
C
rs s
V D S = 5 0 V, V GS =0 V
f=1 .0 MH Z
nC
ns
pF
S o urc e - D ra i n D i o d e
Ma x. D i o d e F o rwa rd C urre nt
D i o d e F o rwa rd Vo lta g e
IS
-
-
-
42
A
V SD
IS = 3 0 A , V GS =0 V
-
-
1 .3
V
NOTE: Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
V DD
Switching
Test Circuit
V IN
V DD
Gate Charge
Test Circuit
RL
V GS
RL
V OUT
RG
1mA
RG
June 03, 2010-REV.00
PAGE . 2
PJB24N10
Typical Characteristics Curves ( Ta=25℃
℃, unless otherwise noted)
ID - Drain-to-Source Current (A)
VGS=10V~7V
6.0V
80
60
40
5.0V
20
4.5V
ID - Drain Source Current (A)
100
100
VDS =10V
80
60
40
TJ = 125oC
-55oC
0
0
0
3
6
9
12
VDS - Drain-to-Source Voltage (V)
2
15
100
RDS(ON) - On Resistance(mΩ
Ω)
RDS(ON) - On Resistance(mΩ
Ω)
50
40
30
VGS=6.5V
20
VGS = 10V
10
ID =30A
80
60
TJ =125oC
40
20
TJ =25oC
0
0
0
20
40
60
ID - Drain Current (A)
4
80
Fig.3 On Resistance vs Drain Current
5
6
7
8
9
VGS - Gate-to-Source Voltage (V)
10
Fig.4 On Resistance vs Gate to Source Voltage
5000
2
VGS =10 V
ID =30A
1.6
f = 1MHz
VGS = 0V
C - Capacitance (pF)
RDS(ON) - On-Resistance(Normalized)
3
4
5
6
7
VGS - Gate-to-Source Voltage (V)
Fig.2 Transfer Characteristric
Fig.1 Output Characteristric
1.8
25oC
20
4000
Ciss
3000
1.4
1.2
C
2000
1
C
C
1000
0.8
Coss
0.6
Crss
0
-50 -25 0
25 50 75 100 125 150
TJ - Junction Temperature (oC)
Fig.5 On Resistance vs Junction Temperature
June 03, 2010-REV.00
0
10
20
30
40
50
VDS - Drain-to-Source Voltage (V)
Fig.6 Capacitance
PAGE. 3
PJB24N10
10
100
VDS=50V
ID =30A
8
IS - Source Current (A)
VGS - Gate-to-Source Voltage (V)
Typical Characteristics Curves ( Ta=25℃
℃, unless otherwise noted)
6
4
2
10
TJ = 125oC
1
25oC
0.1
-55oC
0.01
0
0
10
20
30
40
50
Qg - Gate Charge (nC)
60
Fig. 7 Gate Charge Waveform
Vth - G-S Threshold Voltage(Normalized)
VGS = 0V
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD - Source-to-Drain Voltage (V)
Fig.8 Source-Drain Diode Forward Voltage
1.2
ID = 250µA
1.1
1
0.9
0.8
0.7
0.6
-50 -25 0
25 50 75 100 125 150
TJ - Junction Temperature (oC)
Fig.9 Breakdown Voltage vs Junction Temperature
June 03, 2010-REV.00
PAGE. 4
PJB24N10
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
June 03, 2010-REV.00
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