MOSFET MODULE PHM5601 Single 560A /150V OUTLINE DRAWING FEATURES * Trench Gate MOS FET Module * Super Low Rds(ON) 2 milliohms( @560A ) * With Fast Recovery Source-Drain Diode Circuit TYPICAL APPLICATIONS * Chopper Control For FORKLIFTs Approximate Weight : 650g MAXMUM RATINGS Ratings Symbol PHM5601 Unit Drain-Source Voltage (VGS=0V) Gate - Source Voltage VDSS VGSS 150 +/ - 20 560 (Tc=25°C) 440 (Tc=25°C) 1,120 Tc=25°C) 1,780 Tc=25°C) -40 to +150 -40 to +125 2,500 3.0 V V Continuous Drain Current Duty=50% D.C. ID Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Isolation Voltage Terminals to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Gate Terminals Bus Bar to Main Terminals IDM PD Tjw Tstg VISO FTOR M4 M8 ELECTRICAL CHARACTERISTICS (@Tc=25°C unless otherwise noted) Characteristic Symbol Test Condition Zero Gate Voltage Drain Current Gate-Source Leakage Current Gate-Source Threshold Voltage Static Drain-Source On-Resistance Drain-Source On-Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Rise Time Turn-On Delay Time Fall Time Turn-Off Delay Time IDSS IGSS VGS(th) rDS(on) VDS(on) gfs Cies Coss Crss tr td(on) tf td(off) Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time IS ISM VSD trr N•m Min. Typ. Max. 1.0 - 2.0 1.6 1.0 110 13 13 400 380 170 1,100 3.2 3.2 3.2 2.0 1.2 - VDS=10V,VGS=0V,f=1MHz VDD= 80V ID=280A VGS= -5V, +10V RG= 1.2 ohm Duty=50%. D.C. (Terminal Temperature=80°C IS=560A IS=560A, -dis/dt=1,100A/µs A W °C °C V 1.4 10.5 VDS=VDSS,VGS=0V VGS=+/- 20V,VDS=0V VDS=VGS, ID=16mA VGS=10V, ID=560A VGS=10V, ID=560A VDS=15V, ID=560A FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Characteristic Symbol Test Condition A Unit mA µA V m-ohm V S nF nF nF ns Min. Typ. Max. - - - 1.6 130 560 450 1,120 2.0 - Unit A V ns A THERMAL CHRACTERISTICS Characteristic Symbol Test Condition Min. Typ. Max. Unit Thermal Resistance, Junction to Case Thermal Resistance, Case to Heatsink Rth(j-c) Rth(c-f) Mounting surface flat, smooth, and greased - - 0.07 0.035 °C/W PHM5601 OUTLINE DRAWING (Dimensions in mm) Fig.2- Drain to Source On Voltage vs. Gate to Source Voltage (Typical) Fig.1- Output Characteristics (Typical) TC=25℃ 1200 VGE =10V Drain to Source Voltage V DS (V) DrainCurrent I D (A) 1.8 3V 8V 1000 TC=25℃ 250μs PULSE TEST 2 250μs PULSE TEST 4V 800 600 400 200 1.6 1.4 1.2 I D=560A 1 0.8 I D=280A 0.6 0.4 I D=140A 0.2 2V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 0 2 4 Drain to Source Voltage V DS (V) Fig.3- Drain to Source On Voltage vs. Junction Temperature (Typical) Capacitance C (nF) Drain to Source Voltage V DS (V) 125000 ID=560A 1 ID=280A 0.5 I D=140A 0 -50 0 50 100 Coss 0 150 Crss 0.5 1 Switching Time t (μs) Gate to Source Voltage V GS (V) 8 6 4 2 2500 20 50 80 20 10 2000 10 VDD=80V ID=280A TC=25℃ VDD=40V 1500 5 Fig.6- Series Gate Impedance vs. Switching Time (Typical) 100 50 VDD=80V 1000 2 Drain to Source Voltage V DS (V) VDD=20V 500 VGS=0V f=1MHZ TC=25℃ 50000 ID=560A 0 16 75000 25000 16 0 14 100000 Fig.5- Gate Charge vs. Gate to Source Voltage (Typical) 12 12 Ciss Junction Temperature Tj (℃) 14 10 150000 2 1.5 8 Fig.4- Capacitance vs. Drain to Source Voltage (Typical) VGS=10V 250μs PULSE TEST 2.5 6 Gate to Source Voltage V GS (V) 3000 Total Gate Charge Qg (nC) 3500 4000 4500 10 5 2 td(off) 1 0.5 tr 0.2 td(on) tf 0.1 1 2 5 10 20 50 Series Gate Impedance R G (Ω) 100 200 Fig.8- Source to Drain Diode Forward Characteristics (Typical) Fig.7- Drain Current vs. Switching Time (Typical) 1200 1.2 0.8 0.6 0.4 td(on) tr 0.2 TJ=25℃ TJ=125℃ 1000 Source Current I S (A) td(off) 1 Switching Time t (μs) VDD=80V R G=1.2Ω TC=25℃ 800 600 400 200 tf 0 0 100 200 300 400 500 0 600 0 0.2 0.4 0.6 0.8 Fig.9- Reverse Recovery Characteristics (Typical) -IS=800A TJ=125℃ trr 100 50 IRrM 20 10 500 1000 1500 2000 2500 -di/dt (A/μs) Fig.10- Maximun Transient Thermal Impedance (℃/W) 1x10 -1 (J-C) 0 Transient Thermal Impedance Rth Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 500 200 3x10 -2 1x10 -2 3x10 -3 1x10 -3 -5 10 10 -4 1 1.2 Source to Drain Voltage V SD (V) Drain Current ID (A) 10 -3 10 -2 10 -1 SQUARE WAVE PULSE DURATION t (s) 1 10 1 1.4 1.6