BAT81S...BAT83S Vishay Telefunken Schottky Barrier Diodes Features D Integrated protection ring against static discharge D D D D Low capacitance Low leakage current Low forward voltage drop Very low switching time Applications 94 9367 General purpose and switching Schottky barrier diode HF–Detector Protection circuit Diode for low currents with a low supply voltage Small battery charger Power supplies DC / DC converter for notebooks Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g Test Conditions Peak forward surge current Repetitive peak forward current Forward current Junction temperature Storage temperature range Type BAT81S BAT82S BAT83S tp≤10ms tp≤1s Symbol VR VR VR IFSM IFRM IF Tj Tstg Value 40 50 60 500 150 30 125 –65...+150 Unit V V V mA mA mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value 320 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage g Reverse current Diode capacitance Document Number 85512 Rev. 3, 01-Apr-99 Test Conditions IF=0.1mA IF=1mA IF=15mA VR=VRmax VR=1V, f=1MHz Type Symbol VF VF VF IR CD Min Typ Max 330 410 1 200 1.6 Unit mV mV V nA pF www.vishay.de • FaxBack +1-408-970-5600 1 (4) BAT81S...BAT83S Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified) PR – Reverse Power Dissipation ( mW ) 14 1000 VR = 60 V RthJA= 540K/W 10 IF – Forward Current ( A ) 12 PR–Limit @100%VR 8 6 PR–Limit @80%VR 4 2 Tj = 150°C 10 Tj = 25°C 1 0.1 0.01 0 25 50 75 100 125 0 150 Tj – Junction Temperature ( °C ) 15794 0.5 1.0 1.5 2.0 VF – Forward Voltage ( V ) 15796 Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature Figure 3. Forward Current vs. Forward Voltage 1000.0 2.0 VR = VRRM f=1MHz 1.8 CD – Diode Capacitance ( pF ) I R – Reverse Current ( mA ) 100 100.0 10.0 1.0 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.1 25 15795 50 75 100 125 Tj – Junction Temperature ( °C ) Figure 2. Reverse Current vs. Junction Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (4) 0 0.1 150 15797 1.0 10.0 100.0 VR – Reverse Voltage ( V ) Figure 4. Diode Capacitance vs. Reverse Voltage Document Number 85512 Rev. 3, 01-Apr-99 BAT81S...BAT83S Vishay Telefunken Dimensions in mm Cathode Identification ∅ 0.55 max. technical drawings according to DIN specifications 94 9366 ∅ 1.7 max. Standard Glass Case 54 A 2 DIN 41880 JEDEC DO 35 Weight max. 0.3 g Document Number 85512 Rev. 3, 01-Apr-99 26 min. 3.9 max. 26 min. www.vishay.de • FaxBack +1-408-970-5600 3 (4) BAT81S...BAT83S Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de • FaxBack +1-408-970-5600 4 (4) Document Number 85512 Rev. 3, 01-Apr-99