Transistors SMD Type PNP Silicon Planar High Voltage Transistor FZTA92 SOT-223 Unit: mm +0.2 3.50-0.2 6.50 Features +0.1 3.00-0.1 High breakdown voltage +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector 3 2 3 Emitter +0.1 0.70-0.1 2.9 4 Collector 4.6 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5 V Base Current IB -100 mA Continuous Collector Current IC -500 mA Ptot 2 W Tj:Tstg -55 to +150 Power Dissipation at Tamb=25°C Operating and Storage Temperature Range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC=-100ìA, IE=0 -300 V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0* -300 V Emitter-Base Breakdown Voltage V(BR)EBO IE=-100ìA, IC=0 -5 V Collector Cut-Off Current ICBO VCB=-200V, IE=0 -0.25 ìA Emitter Cut-Off Current IEBO VEB=-3V, IC=0 -0.1 ìA -0.5 V -0.9 V Collector-Emitter Saturation Voltage VCE(sat) IC=-20mA, IB=-2mA Base-Emitter Saturation Voltage VBE(sat) IC=-20mA, IB=-2mA Static Forward Current Transfer Ratio hFE Transition Frequency fT Output Capacitance Cobo IC=-1mA, VCE=-10V* 25 IC=-10mA, VCE=-10V* 40 IC=-30mA, VCE=-10V* 25 IC=-10mA, VCE=-20V,f=20MHz 50 VCB=-20V, f=1MHz * Measured under pulsed conditions. Pulse width=300ìs. Duty cycle MHz 6 pF 2% www.kexin.com.cn 1