FA38SA50LCP Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance • Low internal inductance • UL pending • Compliant to RoHS directive 2002/95/EC • Designed for industrial level PRODUCT SUMMARY VDSS 500 V RDS(on) 0.13 Ω ID 38 A Type Modules - MOSFET Package SOT-227 DESCRIPTION Third Generation Power MOSFETs from Vishay HPP provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-227 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 500 W. The low thermal resistance of the SOT-227 contribute to its wide acceptance throughout the industry. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Continuous drain current at VGS 10 V TEST CONDITIONS TC = 25 °C ID TC = 100 °C IDM (1) Pulsed drain current Power dissipation PD MAX. UNITS 38 24 A 150 TC = 25 °C Linear derating factor 500 W 4.0 W/°C VGS ± 20 V Single pulse avalanche energy EAS (2) 580 mJ Avalanche current IAR (1) 38 A (1) Gate to source voltage Repetitive avalanche energy EAR 50 mJ Peak diode recovery dV/dt dV/dt (3) 10 V/ns Operating junction and storage temperature range TJ, TStg - 55 to + 150 °C VISO 2.5 kV 1.3 Nm Insulation withstand voltage (AC-RMS) Mounting torque M4 screw Notes (1) Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) (2) Starting T = 25 °C, L = 0.80 mH, R = 25 Ω, I J g AS = 38 A (see fig. 12) (3) I SD ≤ 38 A, dI/dt ≤ 410 A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150 °C Document Number: 94547 Revision: 11-May-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 FA38SA50LCP Power MOSFET, 38 A Vishay Semiconductors THERMAL RESISTANCE PARAMETER SYMBOL TYP. MAX. Junction to case RthJC - 0.25 Case to sink, flat, greased surface RthCS 0.05 - UNITS °C/W ELECTRICAL CHARACTERISTCS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL Drain to source breakdown voltage Breakdown voltage temperature coefficient Static drain to source on-resistance TEST CONDITIONS V(BR)DSS VGS = 0 V, ID = 1.0 mA ΔV(BR)DSS/ΔTJ RDS(on) (1) Gate threshold voltage VGS(th) Forward transconductance gfs Drain to source leakage current IDSS Gate to source forward leakage IGSS Gate to source reverse leakage Total gate charge Qg Gate to source charge Qgs Gate to drain ("Miller") charge Qgd Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Internal source inductance LS Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Reference to 25 °C, ID = 1 mA MIN. TYP. MAX. UNITS 500 - - V - 0.66 - V/°C - - 0.13 Ω VDS = VGS, ID = 250 μA 2.0 - 4.0 V VDS = 25 V, ID = 23 A S VGS = 10 V, ID = 23 A 22 - - VDS = 500 V, VGS = 0 V - - 50 VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 500 VGS = 20 V - - 200 VGS = - 20 V - - - 200 ID = 38 A VDS = 400 V VGS = 10 V; see fig. 6 and 13 (1) - 280 420 - 37 55 - 150 220 - 42 - - 340 - - 200 - - 330 - - 5.0 - - 6900 - - 1600 - - 580 - MIN. TYP. MAX. - - 38 - - 150 VDD = 250 V ID = 38 A Rg = 10 Ω (ιντερναλ) RD = 8 Ω, see fig. 10 (1) Between lead, and center of die contact VGS = 0 V VDS = 25 V f = 1.0 MHz, see fig. 5 μA nA nC ns nH pF Note (1) Pulse width ≤ 300 μs, duty cycle ≤ 2 % SOURCE-DRAIN RATINGS AND CHARACTERISTICS PARAMETER SYMBOL Continuous source current (body diode) D IS Pulsed source current (body diode) TEST CONDITIONS ISM (1) (2) Diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr Forward turn-on time ton MOSFET symbol showing the integral reverse p-n junction diode. UNITS A G S TJ = 25 °C, IS = 38 A, VGS = 0 V TJ = 25 °C, IF = 38 A; dI/dt = 100 A/μs (2) - - 1.3 V - 830 1300 ns - 15 22 μC Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD) Notes Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) (2) Pulse width ≤ 300 μs, duty cycle ≤ 2 % (1) www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94547 Revision: 11-May-10 FA38SA50LCP Power MOSFET, 38 A 3.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V ID , Drain-to-Source Current (A) TOP 100 10 4.5V 20μs PULSE WIDTH TC = 25°C 1 1 10 A RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 100 Vishay Semiconductors ID = 38A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VDS , Drain-to-Source Voltage (V) 16000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 60 80 100 120 140 160 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 14000 C, Capacitance (pF) I D , Drain-to-Source Current (A) 40 Fig. 4 - Normalized On-Resistance vs. Temperature TOP 100 12000 10000 Ciss 8000 6000 Coss 4000 Crss 4.5V 1 2000 20μs PULSE WIDTH TJ = 150 °C 10 10 0 100 1 VDS, Drain-to-Source Voltage (V) VGS , Gate-to-Source Voltage (V) 20 100 TJ = 150 ° C TJ = 25 ° C 10 V DS = 50V 20μs PULSE WIDTH 4 5 6 7 VGS , Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics Document Number: 94547 Revision: 11-May-10 100 Fig. 5 - Typical Capacitance vs. Drain to Source Voltage 1000 1 10 VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics I D , Drain-to-Source Current (A) 20 TJ , Junction Temperature ( °C) Fig. 1 - Typical Output Characteristics 1000 VGS = 10V 0 ID = 38A VDS = 400V VDS = 250V VDS = 100V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 8 0 80 160 240 320 400 QG , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate to Source Voltage For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 FA38SA50LCP Power MOSFET, 38 A Vishay Semiconductors ISD , Reverse Drain Current (A) 1000 Current regulator Same type as D.U.T. 100 50 KΩ .2 µF 12 V TJ = 150 ° C .3 µF 10 D.U.T. + V - DS TJ = 25 ° C 1 VGS 3 mA 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 IG ID Current sampling resistors 1.6 VSD ,Source-to-Drain Voltage (V) Fig. 7 - Typical Source Drain Diode Forward Voltage Fig. 10 - Gate Charge Test Circuit 1000 ID , Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) RD VDS 100 10us VGS D.U.T. RG + - VDD 100us 10 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 1ms 1 TC = 25 °C TJ = 150 °C Single Pulse 1 10 10ms 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area QG Fig. 11 - Switching Time Test Circuit VDS 90% 10V QGS QGD VG 0% GS Charge Fig. 9 - Basic Gate Charge Waveform www.vishay.com 4 td(on) tr t d(off) tf Fig. 12 - Switching Time Waveforms For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94547 Revision: 11-May-10 FA38SA50LCP Power MOSFET, 38 A Vishay Semiconductors Thermal Response (Z thJC ) 1 0.50 0.1 0.20 0.10 0.05 PDM 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (sec) Fig. 13 - Maximum Effective Transient Thermal Impedance, Junction to Case V(BR)DSS 15 V L VDS tp Driver D.U.T RG + - VDD IAS 20 V tp A I AS 0.01 Ω Fig. 14 - Unclamped Inductive Test Circuit Fig. 15 - Unclamped Inductive Waveforms EAS , Single Pulse Avalanche Energy (mJ) 1200 TOP 1000 BOTTOM ID 17A 24A 38A 800 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig. 16 - Maximum Avalanche Energy vs. Drain Current Document Number: 94547 Revision: 11-May-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 FA38SA50LCP Power MOSFET, 38 A Vishay Semiconductors + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer 3 + 2 - - 4 + 1 RG • • • • + dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - Device under test - VDD Fig. 17 - Peak Diode Recovery dV/dt Test Circuit Driver Gate Drive D= Period P.W. P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig. 18 - For N-Channel Power MOSFETs www.vishay.com 6 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94547 Revision: 11-May-10 FA38SA50LCP Power MOSFET, 38 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code F A 38 S A 50 LC P 1 2 3 4 5 6 7 8 1 - Power MOSFET 2 - Generation 3, MOSFET silicon, DBC construction 3 - Current rating (38 = 38 A) 4 - Single switch (see Circuit Configuration table) 5 - SOT-227 6 - Voltage rating (50 = 500 V) 7 - Low charge 8 - P = Lead (Pb)-free CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING D (3) Lead assignment S Single switch no diode S G (2) D 4 3 1 2 S (1-4) S G LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95036 Packaging information www.vishay.com/doc?95037 Document Number: 94547 Revision: 11-May-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 7 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Chamfer 2.00 (0.079) x 45° 4 x M4 nuts Ø 4.40 (0.173) Ø 4.20 (0.165) -A3 4 6.25 (0.246) 12.50 (0.492) 25.70 (1.012) 25.20 (0.992) -B- 1 2 R full 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C- 12.30 (0.484) 11.80 (0.464) 0.12 (0.005) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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