NJX1675PDR2G Complementary 30 V, 6.0 A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. Features These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS http://onsemi.com 30 VOLTS, 6.0 AMPS COMPLEMENTARY TRANSISTOR EQUIVALENT RDS(on) 80 mΩ Compliant COLLECTOR 7,8 COLLECTOR 5,6 MAXIMUM RATINGS (TA = 25C) Rating Symbol Max Unit Collector-Emitter Voltage NPN PNP VCEO 30 --30 Vdc Collector-Base Voltage NPN PNP VCBO 30 --30 Vdc Emitter-Base Voltage NPN PNP VEBO 6.0 --7.0 Vdc Collector Current -- Continuous NPN PNP IC 3.0 --3.0 A Collector Current -- Peak NPN PNP ICM 6.0 --6.0 A ESD HBM Class 3B MM Class C Electrostatic Discharge 2 BASE 4 BASE 1 EMITTER 3 EMITTER 8 1 SOIC--8 CASE 751 STYLE 16 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. DEVICE MARKING 8 XXXXXX AYWWG G 1 XXXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb--Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NJX1675PDR2G Package Shipping† SOIC--8 (Pb--Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2010 June, 2010 -- Rev. 0 1 Publication Order Number: NJX1675P/D NJX1675PDR2G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction--to--Ambient (Note 1) Junction and Storage Temperature Range Symbol Max Unit PD 2.0 W 16 mW/C RθJA 62 C/W TJ, Tstg --55 to +150 C 1. FR-- 4 @ 100 mm2, 1 oz. copper traces, still air, t 10 sec. 2. Dual heated values assume total power is the sum of two equally powered devices. NPN ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max 30 -- -- 30 -- -- 6.0 -- -- -- -- 0.1 -- -- 0.1 100 100 180 180 400 350 340 320 ----- ----- 0.008 0.044 0.080 0.082 0.011 0.060 0.115 0.115 -- 0.780 0.900 -- 0.650 0.750 100 -- -- Unit OFF CHARACTERISTICS Collector -- Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector -- Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO Emitter -- Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 5.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 4) (IC = 10 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) hFE Collector -- Emitter Saturation Voltage (Note 4) (IC = 0.1 A, IB = 0.010 A) (IC = 1.0 A, IB = 0.100 A) (IC = 1.0 A, IB = 0.010 A) (IC = 2.0 A, IB = 0.200 A) VCE(sat) Base -- Emitter Saturation Voltage (Note 4) (IC = 1.0 A, IB = 0.01 A) VBE(sat) Base -- Emitter Turn--on Voltage (Note 4) (IC = 0.1 A, VCE = 2.0 V) VBE(on) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) fT V V V MHz Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo -- 320 450 pF Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo -- 40 -- pF SWITCHING CHARACTERISTICS Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) td -- -- 100 ns Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) tr -- -- 100 ns Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) ts -- -- 780 ns Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) tf -- -- 110 ns 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. http://onsemi.com 2 NJX1675PDR2G PNP ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max --30 -- -- --30 -- -- --7.0 -- -- -- -- --0.1 -- -- --0.1 100 100 180 150 380 340 300 230 ----- ----- --0.013 --0.075 --0.130 --0.135 --0.017 --0.095 --0.170 --0.170 -- --0.780 --0.900 -- --0.660 --0.750 100 120 -- Unit OFF CHARACTERISTICS Collector -- Emitter Breakdown Voltage (IC = --10 mAdc, IB = 0) V(BR)CEO Collector -- Base Breakdown Voltage (IC = --0.1 mAdc, IE = 0) V(BR)CBO Emitter -- Base Breakdown Voltage (IE = --1.0 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = --30 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = --5.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 4) (IC = --10 mA, VCE = --2.0 V) (IC = --500 mA, VCE = --2.0 V) (IC = --1.0 A, VCE = --2.0 V) (IC = --2.0 A, VCE = --2.0 V) hFE Collector -- Emitter Saturation Voltage (Note 4) (IC = --0.1 A, IB = --0.010 A) (IC = --1.0 A, IB = --0.100 A) (IC = --1.0 A, IB = --0.010 A) (IC = --2.0 A, IB = --0.200 A) VCE(sat) Base -- Emitter Saturation Voltage (Note 4) (IC = --1.0 A, IB = --0.01 A) VBE(sat) Base -- Emitter Turn--on Voltage (Note 4) (IC = --0.1 A, VCE = --2.0 V) VBE(on) V V V Cutoff Frequency (IC = --100 mA, VCE = --5.0 V, f = 100 MHz) fT MHz Input Capacitance (VEB = --0.5 V, f = 1.0 MHz) Cibo -- 250 300 pF Output Capacitance (VCB = --3.0 V, f = 1.0 MHz) Cobo -- 50 -- pF Delay (VCC = --30 V, IC = --750 mA, IB1 = --15 mA) td -- -- 60 ns Rise (VCC = --30 V, IC = --750 mA, IB1 = --15 mA) tr -- -- 120 ns Storage (VCC = --30 V, IC = --750 mA, IB1 = --15 mA) ts -- -- 400 ns Fall (VCC = --30 V, IC = --750 mA, IB1 = --15 mA) tf -- -- 130 ns SWITCHING CHARACTERISTICS 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. http://onsemi.com 3 NJX1675PDR2G NPN TYPICAL CHARACTERISTICS 0.14 25C 0.12 0.10 --55C 0.08 0.06 0.04 0.02 0 0.001 0.01 0.1 1 10 VBE(sat), BASE--EMITTER SATURATION VOLTAGE (V) 25C (2.0 V) --55C (5.0 V) 0.001 0.01 0.1 1 0.01 0.1 1 10 IC/IB = 10 0.9 --55C 0.8 0.7 25C 0.6 0.5 150C 0.4 0.3 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current 1.0 VCE = +2.0 V 0.7 VCE(sat), COLLECTOR--EMITTER VOLTAGE (V) VBE(on), BASE--EMITTER TURN--ON VOLTAGE (V) 0.001 IC, COLLECTOR CURRENT (A) 0.8 --55C 25C 0.6 0.5 150C 0.4 0.3 0.2 0 0.2 10 1.0 0.9 --55C 0.05 1.0 200 --55C (2.0 V) 100 25C 0.10 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 25C (5.0 V) 300 0.15 Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 600 150C (2.0 V) 400 150C 0.20 IC, COLLECTOR CURRENT (A) 150C (5.0 V) 500 IC/IB = 100 0.25 IC, COLLECTOR CURRENT (A) 700 hFE, DC CURRENT GAIN 0.30 150C IC/IB = 10 VCE(sat), COLLECTOR--EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR--EMITTER SATURATION VOLTAGE (V) 0.16 0.001 0.01 0.1 1 10 0.9 100 mA 0.8 1A 3A 2A 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) Ib, BASE CURRENT (A) Figure 5. Base Emitter Turn--On Voltage vs. Collector Current Figure 6. Saturation Region http://onsemi.com 4 0.1 NJX1675PDR2G NPN TYPICAL CHARACTERISTICS Cobo, OUTPUT CAPACITANCE (pF) 80 350 325 300 275 250 Cibo (pF) 225 200 175 150 0 1 2 3 4 5 70 60 50 40 20 10 6 Cobo (pF) 30 0 5 10 15 20 25 30 VEB, EMITTER--BASE VOLTAGE (V) Vcb, COLLECTOR--BASE VOLTAGE (V) Figure 7. Input Capacitance Figure 8. Output Capacitance 10 1 ms 1s 10 ms 100 ms 1.0 IC (A) Cibo, INPUT CAPACITANCE (pF) 400 375 0.1 Thermal Limit 0.01 0.001 Single Pulse Test at TA = 25C 0.01 0.1 1.0 10 VCE (Vdc) Figure 9. Safe Operating Area http://onsemi.com 5 100 35 40 NJX1675PDR2G PNP TYPICAL CHARACTERISTICS 150C 0.20 --55C 0.15 25C 0.10 0.05 0 0.001 0.01 0.1 1 10 300 --55C (5.0 V) 200 --55C (2.0 V) 100 0 0.001 0.01 0.1 1 0 0.001 0.01 0.1 1 10 IC/IB = 10 1.0 0.9 --55C 0.8 25C 0.7 0.6 150C 0.5 0.4 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 12. DC Current Gain vs. Collector Current Figure 13. Base Emitter Saturation Voltage vs. Collector Current 2.0 VCE = --2.0 V 0.7 VCE(sat), COLLECTOR--EMITTER VOLTAGE (V) VBE(on), BASE--EMITTER TURN--ON VOLTAGE (V) 0.05 IC, COLLECTOR CURRENT (A) 0.8 --55C 25C 0.6 0.5 150C 0.4 0.3 0.2 0.10 0.3 10 1.0 0.9 0.15 1.1 25C (2.0 V) 400 0.20 150C Figure 11. Collector Emitter Saturation Voltage vs. Collector Current 25C (5.0 V) 500 25C Figure 10. Collector Emitter Saturation Voltage vs. Collector Current 150C (2.0 V) 600 --55C IC, COLLECTOR CURRENT (A) 150C (5.0 V) 700 IC/IB = 100 0.25 IC, COLLECTOR CURRENT (A) 800 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR--EMITTER SATURATION VOLTAGE (V) 0.30 IC/IB = 10 VBE(sat), BASE--EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR--EMITTER SATURATION VOLTAGE (V) 0.25 0.001 0.01 0.1 1 10 1.8 100 mA 1.6 1A 3A 2A 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) Ib, BASE CURRENT (A) Figure 14. Base Emitter Turn--On Voltage vs. Collector Current Figure 15. Saturation Region http://onsemi.com 6 0.1 NJX1675PDR2G PNP TYPICAL CHARACTERISTICS Cobo, OUTPUT CAPACITANCE (pF) 100 300 250 200 Cibo (pF) 150 100 0 1 2 3 4 5 90 80 70 60 50 Cobo (pF) 40 30 6 0 5 10 15 20 25 30 VEB, EMITTER BASE VOLTAGE (V) Vcb, COLLECTOR BASE VOLTAGE (V) Figure 16. Input Capacitance Figure 17. Output Capacitance 10 1 ms 1s 10 ms 100 ms 1.0 IC (A) Cibo, INPUT CAPACITANCE (pF) 350 0.1 Thermal Limit 0.01 0.001 Single Pulse Test at TA = 25C 0.01 0.1 1.0 10 VCE (Vdc) Figure 18. Safe Operating Area http://onsemi.com 7 100 35 40 NJX1675PDR2G PACKAGE DIMENSIONS SOIC--8 NB CASE 751--07 ISSUE AJ --X-- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751--01 THRU 751--06 ARE OBSOLETE. NEW STANDARD IS 751--07. A 8 5 S B 1 0.25 (0.010) M Y M 4 --Y-- K G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE --Z-- 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 STYLE 16: PIN 1. EMITTER, DIE #1 2. BASE, DIE #1 3. EMITTER, DIE #2 4. BASE, DIE #2 5. COLLECTOR, DIE #2 6. COLLECTOR, DIE #2 7. COLLECTOR, DIE #1 8. COLLECTOR, DIE #1 SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm inches *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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