VISHAY SB3H90

SB3H90 and SB3H100
Vishay Semiconductors
New Product
formerly General Semiconductor
High Voltage Schottky Rectifier
Reverse Voltage 90 to 100V
Forward Current 3.0A
DO-201AD
1.0 (25.4)
Min.
0.210 (5.3)
0.190 (4.8)
Dia.
0.375 (9.5)
0.285 (7.2)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Low power loss, high efficiency
• For use in low voltage high frequency inverters,
free wheeling, and polarity protection applications
• Guardring for overvoltage protection
• High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mechanical Data
1.0 (25.4)
Min.
0.052 (1.32)
0.048 (1.22)
Dia.
Dimensions in inches and (millimeters)
Case: JEDEC DO-201AD molded plastic body
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.04 oz., 1.12g
Maximum Ratings and Thermal Characteristics (T
Parameter
A
= 25°C unless otherwise noted)
Symbol
SB3H90
SB3H100
Unit
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Maximum working reverse voltage
VRWM
90
90
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TL = 90°C
IF(AV)
3.0
A
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
100
A
Peak repetitive reverse surge current at tp = 2.0µs, 1KHZ
IRRM
1.0
A
Critical rate of rise of reverse voltage
dv/dt
10,000
V/µs
Maximum thermal resistance(2)
RθJA
RθJL
30
10
°C/W
Storage temperature range
TSTG
–55 to +175
°C
TJ
+175
°C
Maximum operating junction temperature
Electrical Characteristics
Maximum instantaneous
forward voltage at: (1)
Maximum DC reverse current
at rated DC blocking voltage
(TA = 25°C unless otherwise noted)
IF = 3.0A, TJ = 25°C
IF = 3.0A, TJ = 125°C
VF
0.80
0.65
V
TJ = 25°C
TJ = 125°C
IR
20
4
µA
mA
Notes:
(1) Pulse test: 300µs pulse width, 1% duty cycle
(2) P.C.B. mounted with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
Document Number 88720
1-Jul-02
www.vishay.com
1
SB3H90 and SB3H100
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 2 -- Maximum Non-repetitive Peak
Forward Surge Current
Average Forward Current (A)
4.0
Resistive or Inductive Load
0.375" (9.5mm) lead length
3.0
2.0
1.0
Peak Forward Surge Current (A)
Fig. 1 -- Forward Current
Derating Curve
0
50
25
100
75
125
150
80
60
40
20
1
175
100
10
Lead Temperature (°C)
Number of Cycles at 60 Hz
Fig. 3 -- Typical Instantaneous Forward
Characteristics
Fig. 4 -- Typical Reverse
Characteristics
Instantaneous Reverse Current (µA)
100
TJ = 175°C
10
TJ = 150°C
1
TJ = 100°C
TJ = 125°C
0.1
TJ = 25°C
Pulse Width = 300 s
1% Duty Cycle
0.01
0
0.2
0.4
0.6
0.8
1.0
TJ = 125°C
10
TJ = 100°C
1
TJ = 25°C
0.1
0.01
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 -- Typical Junction
Capacitance
Fig. 6 - Typical Transient
Thermal Impedance
TJ = 25°C
f = 1.0 MHz
Vsig = 50mVp-p
100
10
1
10
Reverse Voltage (V)
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2
TJ = 150°C
100
Instantaneous Forward Voltage (V)
1,000
0.1
1000
1.2
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
TJ = TJ max.
8.3ms single half sine-wave
(JEDEC Method)
10
0
Junction Capacitance (pF)
100
100
10
1
0.1
0
0.1
1
10
100
t, Pulse Duration (sec.)
Document Number 88720
1-Jul-02