ONSEMI NTUD3127C

NTUD3127C
Small Signal MOSFET
20 V, 200 mA / −180 mA, Complementary,
1.0 x 1.0 mm SOT−963 Package
Features
• Complementary MOSFET Device
• 1.5 V Gate Voltage Rating
• Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
•
Thin Environments such as Portable Electronics.
These are Pb−Free Devices
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V(BR)DSS
RDS(on) Max
5.0 W @ −4.5 V
P−Channel
−20 V
7.0 W @ −2.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
N−Channel
Continuous Drain
Current (Note 1)
P−Channel
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain Current
Symbol
Value
Unit
VDSS
20
V
±8
V
VGS
Steady
State
TA = 25°C
160
TA = 85°C
115
tv5s
TA = 25°C
Steady
State
TA = 25°C
TA = 85°C
−100
tv5s
TA = 25°C
−180
Steady
State
ID
200
−140
3.0 W @ 4.5 V
4.0 W @ 2.5 V
N−Channel
20 V
PD
PINOUT: SOT−963
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
N−Channel
800
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
−600
MARKING
DIAGRAM
mA
TJ,
TSTG
−55 to
150
°C
IS
200
mA
260
°C
TL
Top View
mW
200
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using the minimum recommended pad size,
1 oz. Cu.
2. Pulse Test: pulse width v300 ms, duty cycle v2%
0.20 A
6.0 W @ 1.8 V
10 W @ 1.5 V
125
TA = 25°C
tv5s
P−Channel
mA
−0.18 A
10 W @ −1.8 V
14 W @ −1.5 V
Applications
• Load Switch with Level Shift
• Optimized for Power Management in Ultra Portable Equipment
ID Max
SM
SOT−963
CASE 527AA
S
M
1
= Specific Device Code
= Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NTUD3127CT5G
SOT−963
(Pb−Free)
8000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
August, 2008 − Rev. 1
1
Publication Order Number:
NTUD3127C/D
NTUD3127C
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State, Minimum Pad (Note 3)
Symbol
Max
Unit
RqJA
1000
°C/W
Junction−to−Ambient – t v 5 s (Note 3)
600
3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz. Cu.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
N/P
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
Zero Gate Voltage Drain Current
N
P
N
VGS = 0 V
VGS = 0 V, VDS = 5.0 V
IDSS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
IGSS
P
VGS = 0 V, VDS = −5.0 V
N
VGS = 0 V, VDS = 16 V
P
VGS = 0 V, VDS= −16 V
N
ID = 250 mA
20
ID = −250 mA
−20
V
TJ = 25°C
50
TJ = 85°C
200
TJ = 25°C
−50
TJ = 85°C
−200
100
TJ = 25°C
−100
100
VDS = 0 V, VGS = ±5.0 V
P
−100
nA
nA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(TH)
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
N
VGS = VDS
P
ID = 250 mA
0.4
1.0
ID = −250 mA
−0.4
−1.0
N
VGS = 4.5 V, ID = 100 mA
1.5
3.0
P
VGS = −4.5V, ID = −100 mA
4.0
5.0
N
VGS = 2.5 V, ID = 50 mA
2.0
4.0
P
VGS = −2.5V, ID = −50 mA
5.0
7.0
N
VGS = 1.8 V, ID = 20 mA
3.0
6.0
P
VGS = −1.8V, ID = −20 mA
6.5
10
N
VGS = 1.5 V, ID = 10 mA
4.0
10
P
VGS = −1.5 V, ID = −10 mA
7.5
14
N
VGS = 1.2 V, ID = 1.0 mA
5.5
P
VGS = −1.2 V, ID = −1.0 mA
11.5
N
VDS = 5.0 V, ID = 125 mA
0.35
P
VDS = −5.0 V, ID = −125 mA
0.26
V
W
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
9.0
f = 1 MHz, VGS = 0 V
VDS = 15 V
N
3.0
2.2
12
f = 1 MHz, VGS = 0 V
VDS = −15 V
P
4. Switching characteristics are independent of operating junction temperatures
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2
2.7
1.0
pF
NTUD3127C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
N/P
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
15
N
VGS = 4.5 V, VDD = 10 V, ID = 200 mA,
RG = 2.0 W
24
90
tf
60
td(ON)
20
tr
td(OFF)
P
VGS = −4.5 V, VDD = −15 V,
ID = −180 mA, RG = 2.0 W
tf
ns
37
112
97
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
N
VGS = 0 V, IS = 10 mA
P
VGS = 0 V, IS = −10 mA
4. Switching characteristics are independent of operating junction temperatures
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3
TJ = 25°C
0.60
1.0
−0.65
−1.0
V
NTUD3127C
TYPICAL PERFORMANCE CURVES − N−CHANNEL
VDS ≥ 5 V
ID, DRAIN CURRENT (AMPS)
2.5 V
0.3
0.4
TJ = 25°C
VGS = 3 V to 5 V
2.0 V
0.2
1.5 V
0.1
1.0 V
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
1
3
2
4
0.3
0.2
0.1
4
1
3
2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0
ID = 200 mA
TJ = 25°C
10
5
0
0
2
1
4
3
5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
5
2.5
TJ = 25°C
VGS = 2.5 V
2.0
1.5
VGS = 4.5 V
1.0
0.5
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 3. On−Resistance vs. Gate Voltage
1.75
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = 25°C
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
15
1.5
TJ = 125°C
TJ = −55°C
0
5
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (AMPS)
0.4
1000
VGS = 0 V
ID = 200 mA
VGS = 4.5 V
IDSS, LEAKAGE (nA)
1.25
1.0
0.75
0.5
TJ = 150°C
100
TJ = 125°C
10
0.25
0
−50
−25
0
25
50
75
100
125
150
1
0
4
8
12
16
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
20
NTUD3127C
TYPICAL PERFORMANCE CURVES − N−CHANNEL
1000
VDD = 10 V
ID = 200 mA
VGS = 4.5 V
12
Ciss
9
6
t, TIME (ns)
VGS = 0 V
TJ = 25°C
100
td(off)
tf
tr
td(on)
10
Coss
3
Crss
0
0
2
4
6
8
10 12 14
16 18 20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
1
Figure 7. Capacitance Variation
10
RG, GATE RESISTANCE (OHMS)
Figure 8. Resistive Switching Time
Variation vs. Gate Resistance
0.2
IS, SOURCE CURRENT (AMPS)
C, CAPACITANCE (pF)
15
VGS = 0 V
TJ = 25°C
0.15
0.1
0.05
0
0
0.2
0.4
0.6
0.8
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Diode Forward Voltage vs. Current
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5
1.0
100
NTUD3127C
TYPICAL PERFORMANCE CURVES − P−CHANNEL
VGS = 3.5 V to 5 V
0.32
ID, DRAIN CURRENT (AMPS)
3.0 V
0.28
0.36
TJ = 25°C
ID, DRAIN CURRENT (AMPS)
0.36
2.5 V
0.24
2.0 V
0.20
0.16
0.12
1.5 V
0.08
0.04
1.0 V
1
4
TJ = 25°C
0.20
0.16
0.12
0.08
0.04
0
5
0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
3
4
2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 10. On−Region Characteristics
Figure 11. Transfer Characteristics
12
ID = 180 mA
TJ = 25°C
8
4
0
0
2
1
3
5
4
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
6
VGS = 2.5 V
5
4
VGS = 4.5 V
3
2
1
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
ID, DRAIN CURRENT (AMPS)
Figure 13. On−Resistance vs. Drain Current
and Gate Voltage
1.75
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
5
TJ = 25°C
Figure 12. On−Resistance vs. Gate Voltage
1.5
TJ = 125°C
0.24
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
3
2
TJ = −55°C
0.28
0
0
VDS ≥ 5 V
0.32
1000
VGS = 0 V
ID = 180 mA
VGS = 4.5 V
TJ = 150°C
IDSS, LEAKAGE (nA)
1.25
1.0
0.75
0.5
100
TJ = 125°C
10
0.25
0
−50
−25
0
25
50
75
100
125
150
1
0
4
8
12
16
20
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 14. On−Resistance Variation with
Temperature
Figure 15. Drain−to−Source Leakage Current
vs. Voltage
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6
NTUD3127C
TYPICAL PERFORMANCE CURVES − P−CHANNEL
1000
VDD = 10 V
ID = 180 mA
VGS = 4.5 V
Ciss
VGS = 0 V
TJ = 25°C
8
4
t, TIME (ns)
12
td(off)
tf
tr
100
td(on)
10
Coss
Crss
0
0
2
16 18 20
4
6
8
10 12 14
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
1
Figure 16. Capacitance Variation
10
RG, GATE RESISTANCE (OHMS)
Figure 17. Resistive Switching Time
Variation vs. Gate Resistance
0.18
IS, SOURCE CURRENT (AMPS)
C, CAPACITANCE (pF)
16
VGS = 0 V
TJ = 25°C
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0
0.2
0.4
0.6
0.8
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 18. Diode Forward Voltage vs. Current
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7
1.0
100
NTUD3127C
PACKAGE DIMENSIONS
SOT−963
CASE 527AA−01
ISSUE D
A
−Y−
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
L
−X−
6
5
4
1 2
3
HE
E
e
DIM
A
b
C
D
E
e
L
HE
C
b
6X
0.08 X Y
MILLIMETERS
MIN
NOM
MAX
0.40
0.45
0.50
0.10
0.15
0.20
0.05
0.10
0.15
0.95
1.00
1.05
0.75
0.80
0.85
0.35 BSC
0.05
0.10
0.15
0.95
1.00
1.05
INCHES
NOM
MAX
0.018 0.020
0.006 0.008
0.004 0.006
0.039 0.041
0.032 0.034
0.014 BSC
0.002 0.004 0.006
0.037 0.039 0.041
MIN
0.016
0.004
0.002
0.037
0.03
SOLDERING FOOTPRINT*
0.35
0.014
0.35
0.014
0.90
0.0354
0.20
0.008
0.20
0.008
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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NTUD3127C/D