ONSEMI NSR20F30NXT5G

NSR20F30NXT5G
Schottky Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current and are offered in a Chip Scale
Package (CSP) to reduce board space. The low thermal resistance
enables designers to meet the challenging task of achieving higher
efficiency and meeting reduced space requirements.
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Features
•
•
•
•
•
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Very Low Forward Voltage Drop − 480 mV @ 2.0 A
Low Reverse Current − 20 mA @ 10 V VR
2.0 A of Continuous Forward Current
Power Dissipation of 665 mW with Minimum Trace
ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
Very High Switching Speed
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
30 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
MARKING
DIAGRAM
PIN 1
Typical Applications
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•
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•
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2
ANODE
1
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
20F30
YYY
DSN2
(0603)
CASE 152AB
20F30
YYY
= Specific Device Code
= Year Code
Markets
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Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs & PDAs
GPS
ORDERING INFORMATION
Device
NSR20F30NXT5G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Forward Current (DC)
IF
2.0
A
Forward Surge Current
ESD Rating:
(60 Hz @ 1 cycle)
Human Body Model
Machine Model
IFSM
ESD
Package
Shipping†
DSN2
5000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
A
28
>8
> 400
kV
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 2
1
Publication Order Number:
NSR20F30/D
NSR20F30NXT5G
THERMAL CHARACTERISTICS
Characteristic
Max
Unit
RqJA
PD
213
586
°C/W
mW
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
PD
80
1.56
°C/W
W
Storage Temperature Range
Tstg
−40 to +125
°C
Junction Temperature
TJ
+150
°C
Max
Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Symbol
Min
Typ
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Reverse Leakage
(VR = 10 V)
(VR = 30 V)
IR
Forward Voltage
(IF = 1.0 A)
(IF = 2.0 A)
VF
IR, REVERSE CURRENT (mA)
IF, FORWARD CURRENT (A)
TJ = 125°C
TJ = 150°C
0.1
0.01
75°C
0.1
25°C
0.2
−25°C
0.4
0.3
150°C
1000
125°C
100
75°C
10
25°C
1
0.1
−25°C
0.01
0
5
10
TA = 25°C
400
350
300
250
200
150
100
50
5
20
25
Figure 2. Typical Reverse Current
450
0
15
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Voltage
0
V
0.42
0.48
10000
0.001
0.5
mA
20
150
VF, FORWARD VOLTAGE (V)
C, CAPACITANCE (pF)
0.001
0.0
Typ
100000
10
1
Min
10
15
20
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Capacitance
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2
25
30
30
NSR20F30NXT5G
PACKAGE DIMENSIONS
DSN2, 1.6x0.8, 0.9P, (0603)
CASE 152AB−01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
0.05 C
A B
D
DIM
A
A1
b
D
E
L
L2
L3
E
0.05 C
TOP VIEW
0.05 C
A
0.05 C
A1
C
SIDE VIEW
CATHODE BAND MONTH
CODING
SEATING
PLANE
DEC
NOV OCT
SEP
0.05 C A B
L
L/2
MILLIMETERS
MIN
MAX
0.25
0.31
−−−
0.05
0.55
0.65
1.60 BSC
0.80 BSC
1.45
1.55
0.90
1.00
0.25
0.35
XXXX
YYY
JUN
b
1
MAR
FEB
JAN
0.05 C A B
L2
L3
XXXX
Y09
BOTTOM VIEW
MOUNTING FOOTPRINT*
1.70
DEVICE CODE
YEAR CODE
(EXAMPLE)
INDICATES AUG 2009
0.52
0.80
PIN 1
0.70
1.05
DIMENSIONS: MILLIMETERS
See Application Note AND8398/D for more mounting details
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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3
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For additional information, please contact your local
Sales Representative
NSR20F30/D