VISHAY GSOT05L-V-G-08

GSOT05L-V
Vishay Semiconductors
Single-Line ESD-Protection Diode in SOT-23
FEATURES
• Single-line ESD-protection device
3
• ESD-immunity acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• Space saving SOT-23 package
2
1
20512
20421
• AEC-Q101 qualified
1
• e3 - Sn
YYY
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
XX
XX
MARKING (example only)
20357
YYY = type code (see table below)
X = date code
ORDERING INFORMATION
DEVICE NAME
ENVIRONMENTAL
STATUS
ORDERING CODE
Standard
GSOT05L-V-GS08
Green
GSOT05L-V-G-08
TYPE
CODE
ENVIRONMENTAL
STATUS
WEIGHT
05L
Standard
8.8 mg
5LG
Green
8.1 mg
GSOT05L-V
TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
MINIMUM ORDER
QUANTITY
3000
15 000
PACKAGE DATA
DEVICE
NAME
PACKAGE
NAME
GSOT05L-V
SOT-23
MOLDING
COMPOUND
FLAMMABILITY
RATING
UL 94 V-0
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
MSL level 1
260 °C/10 s at terminals
(according J-STD-020)
ABSOLUTE MAXIMUM RATINGS GSOT05L-V
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
Pin 3 to 1
acc. IEC 61000-4-5, 8/20 µs/single shot
IPPM
13
A
Peak pulse power
Pin 3 to 1
acc. IEC 61000-4-5, 8/20 µs/single shot
PPP
156
W
± 30
kV
ESD immunity
Operating temperature
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
Storage temperature
VESD
± 30
kV
TJ
- 40 to + 150
°C
TSTG
- 55 to + 150
°C
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
Document Number: 85181
Rev. 1.2, 01-Jul-10
For technical questions, contact: [email protected]
www.vishay.com
1
GSOT05L-V
Vishay Semiconductors Single-Line ESD-Protection Diode in
SOT-23
BiAs-MODE (bidirectional asymmetrical protection mode)
With the GSOT05L-V one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground
and pin 3 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is
between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode between data line
and ground offers a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
clamping voltage (VC) is defined by the breakthrough voltage (VBR) level plus the voltage drop at the series impedance
(resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the
protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the GSOT05L-V clamping behaviour is bidirectional and
asymmetrical (BiAs).
L1
3
1
BiAs
2
Ground
20422
ELECTRICAL CHARACTERISTICS GSOT05L-V
PARAMETER
Protection paths
Reverse stand off voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of lines which can be protected
at IR = 1 µA
at VR = 5.5 V
at IR = 1 mA
at IPP = 1 A
at IPP = IPPM = 13 A
at IPP = 1 A
at IPP = IPPM = 13 A
at VR = 0 V; f = 1 MHz
at VR = 2.5 V; f = 1 MHz
Nlines
VRWM
IR
VBR
5.5
6
-
6.1
6.75
6.9
10
1
2.6
100
60
1
7
1
9
12
1.3
3
120
-
lines
V
µA
V
V
V
V
V
pF
pF
VC
VF
CD
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 3 to 1).
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
120 %
80 %
80 %
IPPM
Discharge Current IESD
8 µs to 100 %
100 %
Rise time = 0.7 ns to 1 ns
100 %
60 %
53 %
27 %
20 %
20 %
0%
- 10 0 10 20 30 40 50 60 70 80 90 100
Time (ns)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 Ω/150 pF)
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2
20 µs to 50 %
40 %
40 %
20557
60 %
0%
0
20548
10
20
30
40
Time (µs)
Fig. 2 - 8/20 µs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
For technical questions, contact: [email protected]
Document Number: 85181
Rev. 1.2, 01-Jul-10
GSOT05L-V
Single-Line ESD-Protection Diode in Vishay Semiconductors
SOT-23
12
120
f = 1MHz
10
positive surge
100
8
6
VC (V)
CD (pF)
80
60
Measured
acc. IEC 61000-4-5
(8/20 µs - wave form)
4
2
VC
40
0
20
0
1
2
3
4
5
0
6
2
4
21929
VR (V)
21926
Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR
6
8
10
12
14
16
IPP (A)
Fig. 6 - Typical Peak Clamping Voltage VC vs.
Peak Pulse Current IPP
102
80
101
acc. IEC 61000-4-2
+ 8 kV
contact discharge
60
Pin 1 to 3
1
40
10-1
VC-ESD (V)
IF (mA)
negative surge
-4
0
10-2
10-3
20
0
Pin 3 to 1
pos. discharge
- 20
10-4
- 40
10-5
- 60
- 10 0
10-6
0.3
0.4
0.5
21927
0.6
0.7
0.8
0.9
VF (V)
10 20 30 40 50 60 70 80 90
t (ns)
21930
Fig. 4 - Typical Forward Current IF vs. Forward Voltage VF
Fig. 7 - Typical Clamping Performance at + 8 kV
Contact Discharge (acc. IEC 61000-4-2)
8
60
7
acc. IEC 61000-4-2
- 8 kV
contact discharge
40
6
20
VC-ESD (V)
Pin 3 to 1
5
VR (V)
Pin 3 to 1
-2
4
3
0
- 20
2
- 40
1
- 60
0
0.01
0.1
21928
1
10
100
1000 10 000
IR (µA)
Fig. 5 - Typical Reverse Voltage VR vs. Reverse Current IR
Document Number: 85181
Rev. 1.2, 01-Jul-10
- 80
- 10 0
Pin 3 to 1
neg. discharge
10 20 30 40 50 60 70 80 90
21931
t (ns)
Fig. 8 - Typical Clamping Performance at - 8 kV
Contact Discharge (acc. IEC 61000-4-2)
For technical questions, contact: [email protected]
www.vishay.com
3
GSOT05L-V
Vishay Semiconductors Single-Line ESD-Protection Diode in
SOT-23
250
acc. IEC 61000-4-2
contact discharge
200
150
VC-ESD (V)
100
50
VC-ESD
0
- 50
- 100
Pin 3 to 1
- 150
- 200
- 250
0
5
10
15
20
25
30
VESD (kV)
21932
Fig. 9 - Typical Peak Clamping Voltage at ESD Contact Discharge (acc. IEC 61000-4-2)
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
0.9 (0.035)
1.15 (0.045)
o8
°
0.2 (0.008)
0.098 (0.004)
0.175 (0.007)
0.550 ref. (0.022 ref.)
0.1 (0.004) max.
3.1 (0.122)
2.8 (0.110)
0.45 (0.018)
0.35 (0.014)
0.35 (0.014)
0° t
0.5 (0.020)
0.45 (0.018)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
0.7 (0.028)
0.95 (0.037)
0.9 (0.035)
1.43 (0.056)
1 (0.039)
0.9 (0.035)
Foot print recommendation:
2 (0.079)
1 (0.039)
0.9 (0.035)
1.20 (0.047)
0.45 (0.018)
0.35 (0.014)
0.95 (0.037)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
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4
For technical questions, contact: [email protected]
Document Number: 85181
Rev. 1.2, 01-Jul-10
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Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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