MRF553 NPN SILICON RF TRANSISTOR DESCRIPTION: PACKAGE STYLE The ASI MRF553 is designed for Low power amplifier applications. DIM A B C D E F G H J K FEATURES: • 12.5 V, 175 MHz. • POUT = 1.5 W • GP = 11.5 min. • η = 60 % (Typ) MILLIMETERS MIN MAX 4.45 5.21 1.91 2.54 0.84 0.99 2.46 2.64 8.84 9.73 0.20 0.31 7.24 8.13 1.65 3.25 0.64 1.02 INCHES MIN MAX .175 .205 .075 .100 .033 .039 .097 .104 .348 .383 .008 0.12 .285 .320 0.65 0.128 .025 0.40 MAXIMUM RATINGS IC 500 mA VCB 36 V PDISS 3.0 W @ TC = 75 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 41.7 °C/W CHARACTERISTICS 1 = COLLECTOR 2 = EMITTER 3 = BASE 4 = EMITTER TC = 25 °C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 10 mA 16 V BVCBO IC = 5.0 mA 36 V BVCES IC = 5.0 mA 36 V BVEBO IE = 1.0 mA 4.0 V ICES VCE = 15 V hFE VCE = 5.0 V CCB VCB = 10 V GPE VCE = 12 V IC = 250 mA 30 f = 1.0 MHz POUT = 1.5 W f = 175 MHz 12 5.0 mA 200 --- 20 pF 11.5 13 dB η 50 60 % ψ 10:1 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. --- REV. A 1/1