MRF894 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 6L FLG The ASI MRF894 is agold metalized epitaxial silicon NPN transistor, using diffused ballast resistors for high linearity Calss-AB operation for cellular base station application. A .040x45° B C 2XØ.130 4X .025 R .115 .430 D FEATURES: E • Internal Input Matching Network • PG = 7.5 dB at 30 W/960 MHz • Omnigold™ Metalization System • ηC = 55 % Typ. • = Load mismatch capability 20:1 F .125 G H I J K DIM MINIMUM MAXIMUM inches / mm inches / mm 7.5 A A .355 / 9.02 .365 / 9.27 B .115 / 2.92 .125 / 3.18 VCBO 48V C .075 / 1.91 .085 / 2.16 D .225 / 5.72 .235 / 5.97 VCEO 25 V E .090 / 2.29 .110 / 2.79 F .720 / 18.29 .730 / 18.54 VEBO 3.5 V MAXIMUM RATINGS IC PDISS 88 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 2.0 °C/W CHARACTERISTICS SYMBOL BVCBO BVCER G .970 / 24.64 .980 / 24.89 H .355 / 9.02 .365 / 9.27 I .004 / 0.10 .006 / 0.15 J .120 / 3.05 .130 / 3.30 K .160 / 4.06 .180 / 4.57 L .230 / 5.84 .260 / 6.60 L TC = 25 °C NONETEST CONDITIONS IC = 100 Ma BVCEO BVEBO ICBO hFE IC = 40 mA IC = 40 mA IE = 10 mA VCE = 24 V VCE = 20 V COB VCB = 25 V PG IMD3 ηC VCE = 25 V POUT = 30 W RBE = 150 Ω IC = 2.0 A MINIMUM TYPICAL MAXIMUM 48 30 55 40 ----- V V 25 3.5 10 15 28 5.0 --40 ------100 V mA --- 42 50 pF f = 1.0 MHz ICQ = 60 mA f1 = 860.0 MHz f = 860 MHz f2 = 860.1 MHz UNITS 7.5 9.0 -35 55 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. --- dB dBc % REV. A 1/1