HFP640 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-220 These power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Telecom,Industrial and Consumer Environment █ Features 1- G 2-D 3-S 18A,200V,RDS(on) <0.18Ω@VGS =10 V • Fast switching • 100% avalanche tested • Improved dv/dt capability • Equivalent Type:IRF640 • █ Maximum Ratings（Ta=25℃ unless otherwise specified） T stg ——Storage Temperature ------------------------------------------------------ -55~150℃ T j ——Operating Junction Temperature -------------------------------------------------- 150℃ V DSS —— Drain-Source Voltage ---------------------------------------------------------- 200V VDGR —— Drain-Gate Voltage (RGS=20kΩ) ------------------------------------------------------------ 200V VGSS —— Gate-Source Voltage ------------------------------------------------------------------------ ±20V ID —— Drain Current (Continuous) ------------------------------------------------------------------- 18A PD —— Maximum Power Dissipation ------------------------------------------------------------- 125W IAR —— Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, d < 1%) ------------------------------------------------------ 18A EAS—— Single Pulse Avalanche Energy (starting Tj = 25℃, ID = IAR, VDD = 50 V) --------------------------------------------------- 320mJ EAR—— Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) ---------------- 13.4mJ █ Thermal Characteristics Symbol Rthj-case Items Thermal Resistance Junction-case TO-220 Max 1.0 Unit ℃/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 ℃/W Rth c-s Thermal Resistance Case-sink Typ ℃/W 0.5 HFP640 Shantou Huashan Electronic Devices Co.,Ltd. █ Electrical Characteristics（Ta=25℃ unless otherwise specified） Symbol Items Min. Typ. Max. Unit Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate – Body Leakage On Characteristics Gate Threshold Voltage VGS(th) RDS(on) gFS Static Drain-Source On-Resistance Forward Transconductance 200 2.0 25 V µA ID=250µA ,VGS=0V VDS =200V, VGS=0V 250 ±100 µA nA VDS =160V, VGS=0V,Tj=125℃ VGS= ±20V , VDS =0V 4.0 V VDS = VGS , ID=250µA 0.18 Ω VGS=10V, ID=9A VDS=40V, ID=9A (Note 1) 4.3 S Dynamic Characteristics and Switching Characteristics Ciss Input Capacitance 1700 pF Coss Output Capacitance 230 pF Crss Reverse Transfer Capacitance 60 pF td(on) Turn - On Delay Time 50 nS Rise Time 300 nS Turn - Off Delay Time 300 nS Fall Time 230 nS 58 nC tr td(off) tf Qg Total Gate Charge 45 Qgs Gate–Source Charge 6.5 nC Qgd Gate–Drain Charge 22 nC Drain-Source Diode Characteristics and Maximun Ratings Continuous Source–Drain Diode IS Forward Current Pulsed Drain-Source Diode ISM Forward Current Source–Drain Diode Forward VSD On–Voltage Notes: 1. Pulse Test: Pulse width≤300μS,Duty cycle≤2% 2. Essentially independent of operating temperature 18 A 72 A 1.5 V VDS = 25 V, VGS = 0 V, f = 1.0 MHz VDD = 100 V, ID = 18Apk RG= 25 Ω (Note 1,2) VDS=0.8VDSS, ID=18A, VGS = 10 V (Note 1,2) IS=18A,VGS=0 Shantou Huashan Electronic Devices Co.,Ltd. █ Typical Characteristics HFP640 Shantou Huashan Electronic Devices Co.,Ltd. █ Typical Characteristics Figure 9. Maxinum Safe operating Area Figure 11. Transient Thermal Response Cueve HFP640 Shantou Huashan Electronic Devices Co.,Ltd. █ Typical Characteristics HFP640 Shantou Huashan Electronic Devices Co.,Ltd. █ Typical Characteristics HFP640