Si3435DV New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.036 @ VGS = - 4.5 V - 6.3 0.050 @ VGS = - 2.5 V - 5.3 0.073 @ VGS = - 1.8 V - 4.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a TA = 25_C V - 6.3 - 4.8 - 4.6 - 3.4 ID TA = 85_C Pulsed Drain Current IDM Continuous Diode Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa Unit TA = 85_C Operating Junction and Storage Temperature Range PD A - 20 - 1.7 - 0.9 2.0 1.1 1.0 0.6 TJ, Tstg W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 5 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 45 62.5 90 110 25 30 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71318 S-03371—Rev. B, 03-Mar-03 www.vishay.com 1 Si3435DV New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = - 250 mA - 0.45 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Diode Forward VDS = 0 V, VGS = "8 V Voltagea "100 VDS = - 9.6 V, VGS = 0 V -1 VDS = - 9.6 V, VGS = 0 V, TJ = 85_C -5 VDS = - 5 V, VGS = - 4.5 V nA mA - 20 A VGS = - 4.5 V, ID = - 6.3 A 0.030 0.036 VGS = - 2.5 V, ID = - 5.3 A 0.042 0.050 VGS = - 1.8 V, ID = - 2 A 0.060 0.073 gfs VDS = - 5 V, ID = - 6.3 A 15 VSD IS = - 1.7 A, VGS = 0 V - 0.7 - 1.2 15 23 rDS(on) Forward Transconductancea V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 3.3 Turn-On Delay Time td(on) 18 tr 45 90 90 180 80 160 30 50 Rise Time Turn-Off Delay Time VDS = - 6 V, VGS = - 4.5 V, ID = - 6.3 A VDD = - 6 V, RL = 6 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 3 IF = - 1.7 A, di/dt = 100 A/ms nC 36 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 VGS = 5 thru 2.5 V TC = - 55_C 16 2V I D - Drain Current (A) I D - Drain Current (A) 16 12 8 1.5 V 4 25_C 12 125_C 8 4 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 3.5 4.0 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Document Number: 71318 S-03371—Rev. B, 03-Mar-03 Si3435DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 2500 0.12 2000 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 0.15 VGS = 1.8 V 0.09 0.06 VGS = 2.5 V Ciss 1500 1000 Coss VGS = 4.5 V 500 0.03 Crss 0.00 0 0 4 8 12 16 20 0 3 ID - Drain Current (A) 9 12 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 5 1.4 VDS = 6 V ID = 6.3 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 6 4 3 2 VGS = 4.5 V ID = 6.3 A 1.2 1.0 0.8 1 0 0 4 8 12 0.6 - 50 16 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.15 20 r DS(on) - On-Resistance ( W ) I S - Source Current (A) TJ = 150_C 10 0.12 ID = 6.3 A 0.09 0.06 0.03 TJ = 25_C 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 71318 S-03371—Rev. B, 03-Mar-03 1.2 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si3435DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 30 24 ID = 250 mA 0.2 Power (W) V GS(th) Variance (V) 0.3 0.1 18 TA = 25_C 12 0.0 6 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 10 -2 150 10 -1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Safe Operating Area, Junction-To-Ambient 100 IDM Limited rDS(on) Limited I D - Drain Current (A) 10 P(t) = 0.001 P(t) = 0.01 1 0.1 ID(on) Limited P(t) = 0.1 P(t) = 1 P(t) = 10 TA = 25_C Single Pulse dc BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 www.vishay.com 4 10 -3 10 -2 10 -1 1 Square Square Wave Wave Pulse Pulse Duration Duration (sec) (sec) 10 100 600 Document Number: 71318 S-03371—Rev. B, 03-Mar-03 Si3435DV New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 Document Number: 71318 S-03371—Rev. B, 03-Mar-03 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5