MMBTA92 PNP HIGH VOLTAGE TRANSISTOR 300 Volts VOLTAGE POWER 225 mWatts FEATURES • PNP silicon, planar design • High voltage (max. 300V) • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.008 gram Marking: A92 ABSOLUTE RATINGS PARAMETER CONDITIONS SYMBOL MIN. MAX. UNIT Collector-base voltage open emitter VCBO - -300 V Collector-emitter voltage o p e n b a se VCEO - -300 V Emitter-base voltage open collector VEBO - -5 V Collector current (DC) IC - -500 mA Peak collector current I CM - -600 mA Peak base current I BM - -100 mA PTOT - 225 mW Storage temperature TSTG -65 +150 o C Junction temperature TJ - 150 o C TAMB -65 +150 o C Total power dissipation TAMB<25oC ; note1 Operating ambient temperature Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. REV.0.2-JUL.10.2009 PAGE . 1 MMBTA92 T H E R M A L C H A R A C T E R IS T IC S PA RA ME TE R C O N D IT IO N S The r m a l r e s i s ta nc e fr o m junc ti o n to a m b i e nt no te 1 S YM B O L VA L UE U N IT RΘJA 500 K /W N o t e 1 : Tr a n s i s t o r m o u n t e d o n F R - 4 b o a r d 7 0 x 6 0 x 1 m m . C H A R A C T E R IS T IC S TA MB = 2 5 oC unle s s o t he r wi s e s p e c i f i e d PA RA ME TE R C O N D IT IO N S S YM B O L M IN . MA X . U N IT C o lle c to r c ut- o ff c ur r e nt I E=0 ;V CB=-2 0 0 V I CBO - -250 nA E m i tte r c ut- o ff c ur r e nt I C=0 ;V EB=-3 V I EBO - -100 nA D C c ur r e nt g a i n V C E= - 1 0 V ;no te 2 I C=-1mA I C=-10mA I C=-30mA 25 40 25 - C o l l e c t o r - e m i t t e r s a t ur a t i o n vo l t a g e I C=-2 0 mA ;I B=-2 mA V C E (S A T) - -500 mV B a s e - e m i t t e r s a t ur a t i o n vo l t a g e I C=-2 0 mA ;I B=-2 mA V B E (S A T) - -900 mV C o lle c to r c a p a c i ta nc e I E = i e= 0 ; V C B = - 2 0 V ; f=1 MHz CC - 6 pF Tr a n s i t i o n f r e q u e n c y I C=-1 0 mA ;V CE=-2 0 V ; f=1 0 0 MHz fT 50 - MHz hFE - No te 2 : P uls e te s t : tp < 3 0 0 µ s ; δ< 0 . 0 2 REV.0.2-JUL.10.2009 PAGE . 2 MMBTA92 Total power dissipation Ptot = f(TS) Transition frequency fT = f (IC) VCE = 20V, f = 100MHz 400 mW fT 320 10 3 MHz 5 Ptot 280 240 10 2 200 160 5 120 80 40 0 0 15 30 45 60 75 90 105 120 10 1 10 0 °C 150 TS 5 10 1 5 10 2 mA 5 10 3 ΙC Permissible pulse load Operating range IC = f (VCEO) Ptotmax / PtotDC = f (tp ) TA = 25°C, D = 0 10 3 10 3 Ptot max 5 Ptot DC D= mA tp tp T ΙC T 10 2 10 2 5 10 1 10 µs 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 100 µs 1 ms 5 100 ms 10 5 DC 0 500 ms 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp REV.0.2-JUL.10.2009 10 0 10 -1 10 0 5 10 1 5 10 2 V 5 10 3 V CEO PAGE.3 MMBTA92 Collector cutoff current ICBO = f (TA ) Collector current IC = f (VBE) VCB = 200V VCE = 10V 10 3 10 4 Ι CB0 mA nA ΙC max 10 3 10 2 5 10 2 10 1 5 10 1 typ 10 10 0 0 10 -1 5 50 0 100 C 10 -1 150 0 0.5 DC current gain hFE = f (IC ) V 1.0 TA 1.5 V BE Gain Bandwidth Product vs Collector Current VCE = 10V 10 3 5 10 f T - GAIN BANDWIDTH PRODUCT (MHz) h FE 2 5 2 10 1 5 10 0 -1 10 5 10 0 5 10 1 100 VCE = 50V 80 VCE = 15V 60 40 20 0 1 10 20 50 100 I C - COLLECTOR CURRENT (mA) 5 10 2 mA 10 3 ΙC REV.0.2-JUL.10.2009 PAGE . 4 MMBTA92 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.2-JUL.10.2009 PAGE . 5