MMST5401 TRANSISTOR(PNP) SOT–323 FEATURES Complementary to MMST5551 Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING:K4M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -160 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, IC=0 -5 V Collector cut-off current ICBO VCB=-120V, IE=0 -50 nA Emitter cut-off current IEBO VEB=-3V, IC=0 -50 nA DC current gain hFE Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Transition frequency Collector output capacitance fT Cob VCE=-5V, IC=-1mA 50 VCE=-5V, IC=-10mA 60 VCE=-5V, IC=-50mA 50 300 IC=-50mA, IB=-5mA -0.5 V IC=-10mA, IB=-1mA -0.2 V IC=-50mA, IB=-5mA -1 V IC=-10mA, IB=-1mA -1 V VCE=-10V,IC=-10mA , f=100MHz VCB=-10V, IE=0, f=1MHz 100 MHz 6 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ pF