MMBTA56 TRANSISTOR(PNP) SOT–23 FEATURES General Purpose Amplifier Applications MARKING: 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -4 V IC Collector Current -500 mA PC Collector Power Dissipation 225 mW Thermal Resistance From Junction To Ambient 555 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -80 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -4 V Collector cut-off current ICBO VCB=-80V, IE=0 -0.1 µA Collector cut-off current ICEO VCE=-60V, IB=0 -0.1 µA Emitter-base breakdown voltage IEBO VEB=-4V, IC=0 -0.1 µA hFE(1) VCE=-1V, IC=-10mA 100 hFE(2) VCE=-1V, IC=-100mA 100 DC current gain Collector-emitter saturation voltage VCE(sat) Base-emitter voltage VBE Transition frequency fT 400 IC=-100mA, IB=-10mA -0.25 V VCE=-1V, IC=-100mA -1.2 V VCE=-1V,IC=-100mA, f=100MHz 50 MHz １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５