MMBT5550 TRANSISTOR(NPN) SOT–23 FEATURES High Voltage Transistor MARKING:M1F MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value Unit VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 225 mW Thermal Resistance From Junction To Ambient 556 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 160 V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA, IB=0 140 V Emitter-base breakdown voltage V(BR)EBO IE=0.01mA, IC=0 6 V Collector cut-off current ICBO VCB=100V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=4V, IC=0 50 nA hFE(1) VCE=5V, IC=1mA 60 hFE(2) VCE=5V, IC=10mA 60 hFE(3) VCE=5V, IC=50mA 20 VCE(sat)1 IC=10mA, IB=1mA 0.15 V VCE(sat)2 IC=50mA, IB=5mA 0.25 V VBE(sat)1 IC=10mA, IB=1mA 1 V VBE(sat)2 IC=50mA, IB=5mA 1.2 V DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage 250 *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５