HITTITE HMC294_10

HMC294
v01.0300
MIXERS - CHIP
3
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
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Typical Applications
Features
The HMC294 is ideal for:
Input IP3: +20 dBm
• Microwave Point-to-Point Radios
LO / RF Isolation: 27 dB
• LMDS
Passive: No DC Bias Required
• SATCOM
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Small Size: 0.88 mm x 1.93 mm
Functional Diagram
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Description
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enGeneral
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The HMC294 chip is a miniature passive GaAs
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MMIC double-balanced mixer which can be used
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as an upconverter or downconverter from 25 - 40
GHz in a small chip area of 1.70 mm2. Excellent
isolations are provided by on-chip baluns, which
require no external components and no DC bias.
All data is measured with the chip in a 50 ohm
test fixture connected via 0.076 mm (3 mil) gold
ribbon of minimal length <0.31 mm (<12 mils).
Electrical Specifi cations, TA = +25° C, LO Drive = +14 dBm
Parameter
3-1
Min.
Typ.
Frequency Range, RF & LO
25 - 40
Frequency Range, IF
DC - 2
Max.
Units
GHz
GHz
Conversion Loss
10
13
dB
Noise Figure (SSB)
10
13
dB
LO to RF Isolation
22
27
dB
LO to IF Isolation
31
38
dB
RF to IF Isolation
27
33
dB
IP3 (Input)
15
20
dBm
IP2 (Input)
24
35
dBm
1 dB Gain Compression (Input)
9
12
dBm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC294
v01.0300
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
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Conversion Gain vs.
Temperature @ LO = +14 dBm
0
RF/IF
LO/RF
LO/IF
-10
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-55 C
+25 C
+85 C
-15
-20
-30
-40
-50
-20
20
25
30
35
40
20
25
30
35
40
35
40
FREQUENCY (GHz)
FREQUENCY (GHz)
Conversion Gain vs. LO Drive
Return Loss @ LO = +14 dBm
0
0
+8 dBm
+10 dBm
+12 dBm
+14 dBm
+16 dBm
-5
RETURN LOSS (dB)
CONVERSION GAIN (dB)
3
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-10
-15
MIXERS - CHIP
-10
-5
ISOLATION (dB)
CONVERSION GAIN (dB)
0
Isolation @ LO = +14 dBm
-5
-10
LO
RF
-15
-20
20
25
30
35
20
40
25
Upconverter Performance
Conversion Gain @ LO = +14 dBm
IF Bandwidth @ LO = +14 dBm
0
CONVERSION GAIN (dB)
0
-5
IF BANDWIDTH
30
FREQUENCY (GHz)
FREQUENCY (GHz)
-10
-15
-5
-10
-15
IF CONVERSION GAIN
IF RETURN LOSS
-20
-20
0
2
4
IF FREQUENCY (GHz)
6
8
20
25
30
35
40
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3-2
HMC294
v01.0300
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
D
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Input IP3 vs.
Temperature @ LO = +14 dBm
Input IP3 vs. LO Drive
30
30
+8 dBm
+12 dBm
+10 dBm
+14 dBm
15
25
INPUT IP3 (dBm)
20
10
20
15
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Not
-55 C
+25 C
+85 C
5
20
25
30
35
40
20
25
FREQUENCY (GHz)
35
40
35
40
Input IP2 vs.
Temperature @ LO = +14 dBm
50
40
40
INPUT IP2 (dBm)
50
30
20
+8 dBm
+10 dBm
+12 dBm
+14 dBm
10
30
FREQUENCY (GHz)
Input IP2 vs. LO Drive
30
20
-55 C
+25 C
+85 C
10
0
0
20
25
30
35
40
20
25
FREQUENCY (GHz)
30
FREQUENCY (GHz)
Input P1dB vs.
Temperature @ LO = +14 dBm
MxN Spurious Outputs
16
nLO
mRF
14
INPUT P1dB
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10
5
INPUT IP2 (dBm)
MIXERS - CHIP
3
INPUT IP3 (dBm)
25
12
0
1
0
xx
3.9
1
25
2
3
10
2
0
47
91
59
>110
4
3
86
68
105
>110
106
-55 C
8
RF = 35 GHz @ -10 dBm
LO = 34 GHz @ +14 dBm
All values in dBc below the IF power level.
+25 C
+85 C
6
20
25
30
35
40
FREQUENCY (GHz)
3-3
4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC294
v01.0300
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
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Absolute Maximum Ratings
RF / IF Input
+13 dBm
+27 dBm
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +125 °C
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Outline Drawing
Die Packaging Information [1]
3
MIXERS - CHIP
LO Drive
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
Standard
Alternate
WP-4
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
2. DIE THICKNESS IS .004”.
3. TYPICAL BOND PAD IS .004” SQUARE.
4. BACKSIDE METALLIZATION: GOLD.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3-4
HMC294
v01.0300
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
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Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
MIXERS - CHIP
3
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface
of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick
die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then
attached to the ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
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Microstrip substrates should be brought as close to the die as possible in order to
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minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm e
(3 d
mils).
d mils) is
Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm
en(<12
recommended to minimize inductance on RF, LO & IF ports. m
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Handling Precautions ot
N damage.
Follow these precautions to avoid permanent
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or fingers.
Mounting
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RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
The chip is back-metallized and can be die mounted with AuSn eutectic preforms
or with electrically conductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of
40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made
with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150
°C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible,
less than 12 mils (0.31 mm).
3-5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC294
Notes:
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
D
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3
MIXERS - CHIP
v01.0300
3-6