MMBT591 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES COLLECTOR 3 Power dissipation 3 PCM : 0.5 W Collector Current ICM : -1 A Collector-base voltage 1.200 1.400 0.890 1.110 BASE D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 O 1.020 S 2.100 2.500 V 0.450 0.600 2 EMITTER 3 B S Top View 1 2 O Tj, Tstg : - 55 C ~ + 150 C V G H D ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter All Dimension in mm C Marking: 591 Symbol Test unless 3.040 C L Operating & storage junction temperature Max 2.800 B A V(BR)CBO : -80 V Min A 1 1 2 Dim J K otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100μA,IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO1 Ic=-10mA,IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 μA hFE(1) VCE=-5V,IC=-1mA 100 VCE=-5V,IC=-500mA 100 hFE(2) 1 300 DC current gain hFE(3) 1 VCE=-5V,IC=-1A 80 hFE(4) 1 VCE=-5V,IC=-2A 15 1 IC=-500mA,IB=-50mA -0.3 V VCE(sat)2 1 IC=-1A,IB=-100mA -0.6 V VBE(sat) 1 IC=-1A,IB=-100mA -1.2 V -1 V VCE(sat)1 Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage VBE1 Transition frequency fT Collector output capacitance 1 Cob VCE=-5V,IC=-1A VCE=-10V,IC=-50mA,,f=100MHz VCB=-10V,f=1MHz 150 MHz 10 pF Measured under pulsed conditions,Pulse width=300μs, Duty cycle≤2%. http://www.SeCoSGmbH.com Any changing of specification will not be informed individual MMBT591 PNP Silicon General Purpose Transistor Elektronische Bauelemente TYPICAL CHARACTERISTICS 0.6 0.6 o +25C 0.5 0.5 0.4 0.4 0.3 0.3 IC/IB=10 IC/IB=50 0.2 IC/IB=10 o -55C o +25C o +100C 0.2 0.1 0.1 0 10mA 1mA 100mA 1A 10A 0 10mA 1mA IC-Collector Current V CE(sat) v IC 400 100mA 1A 10A IC-Collector Current V CE(sat) v IC VCE=5V IC/IB=10 1.0 o 300 +100C 200 +25C 100 -55C 0.8 0.6 o o -55C o +25C o +100C 0.4 o 0.2 0 1mA 10mA 100mA 1A 10A 0 10mA 1mA 1A 10A IC-Collector Current IC-Collector Current h FE V IC 1.2 100mA V BE(sat) v IC 10 VCE=5V 1.0 1 0.8 0.6 o -55C o +25C o +100C 0.4 0.1 0.2 0 1mA http://www.SeCoSGmbH.com 10mA 100mA 1A 10A 0.01 0.1V DC 1s 100ms 10ms 1ms 100us 1V 10V IC-Collector Current VCE - Collector Emitter Voltage (V) V BE(on) v I C S afe Operating Area 100V Any changing of specification will not be informed individual