HMC462 v04.1210 Amplifiers - low noise - Chip 1 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Typical Applications Features The HMC462 Wideband LNA is ideal for: Noise Figure: 2 dB @ 10 GHz • Telecom Infrastructure Gain: 15 dB • Microwave Radio & VSAT P1dB Output Power: +15 dBm @ 10 GHz • Military & Space Self-Biased: +5V @ 63 mA • Test Instrumentation 50 Ohm Matched Input/Output • Fiber Optics Die Size: 3.12 x 1.38 x 0.1 mm Functional Diagram General Description The HMC462 is a GaAs MMIC PHEMT Low Noise Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 15 dB of gain, 2.0 to 2.5 dB noise figure and +15 dBm of output power at 1 dB gain compression while requiring only 63 mA from a single +5V supply. Gain flatness is excellent at ±0.5 dB from 6 - 18 GHz making the HMC462 ideal for EW, ECM and RADAR applications. The HMC462 requires a single supply of +5V @ 63 mA and is the self-biased version of the HMC463. The wideband amplifier I/Os are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifications, TA = +25° C, Vdd= 5V Parameter Min. Frequency Range Gain Max. Min. 13.5 Typ. Max. Min. 6.0 - 18.0 15.5 13 15 12 Max. 14 dB Gain Variation Over Temperature 0.015 0.025 0.015 0.025 0.015 0.025 Noise Figure 3.0 4.0 2.5 3.5 3.0 3.7 Input Return Loss 15 Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) (Vdd= 5V) 12 12.5 ±0.5 20 11 dB 14 13 15.5 14 9.5 Units GHz ±0.5 Output Return Loss ±0.5 Typ. 18.0 - 20.0 Gain Flatness Output Power for 1 dB Compression (P1dB) 1-1 Typ. 2.0 - 6.0 dB/ °C dB dB 8 dB 12.5 dBm 18 16 15.5 dBm 26.5 25.5 24 dBm 63 84 63 84 63 84 mA For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC462 v04.1210 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz 20 10 16 S21 S11 S22 -10 12 +25C +85C 8 -40C -20 4 -30 0 0 4 8 12 16 20 24 0 2 4 6 FREQUENCY (GHz) 8 10 Input Return Loss vs. Temperature 14 16 18 20 22 Output Return Loss vs. Temperature 0 0 RETURN LOSS (dB) -5 RETURN LOSS (dB) 12 FREQUENCY (GHz) +25C +85C -40C -10 -15 -20 +25C +85C -40C -5 -10 Amplifiers - low noise - Chip 20 0 1 Gain vs. Temperature GAIN (dB) RESPONSE (dB) Gain & Return Loss -15 -25 -30 -20 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 FREQUENCY (GHz) 10 12 14 16 18 20 22 18 20 22 Noise Figure vs. Temperature Reverse Isolation vs. Temperature 10 0 -10 +25C +85C -40C -20 8 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 8 FREQUENCY (GHz) -30 -40 +25C +85C -40C 6 4 2 -50 0 -60 0 2 4 6 8 10 12 14 FREQUENCY (GHz) 16 18 20 22 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 1-2 HMC462 v04.1210 Psat vs. Temperature 20 25 17 22 Psat (dBm) P1dB (dBm) P1dB vs. Temperature 14 11 +25C +85C -40C 8 +25C +85C -55C 19 16 13 5 10 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 FREQUENCY (GHz) GAIN (dB), P1dB (dBm), NOISE FIGURE (dB) 30 IP3 (dBm) 27 24 +25C +85C -40C 18 15 0 2 4 6 8 10 12 10 12 14 16 18 20 22 Gain, Power, Noise Figure & Supply Current vs. Supply Voltage @ 10 GHz Output IP3 vs. Temperature 21 8 FREQUENCY (GHz) 14 16 18 20 22 20 74 16 70 12 66 8 62 Gain P1dB Noise Figure 4 54 0 4.5 5 Drain Bias Voltage (Vdd) +9 Vdc RF Input Power (RFIN)(Vdd = +5 Vdc) +18 dBm Channel Temperature 175 °C Continuous Pdiss (T = 85 °C) (derate 50 mW/°C above 85 °C) 4.5 W Thermal Resistance (channel to die bottom) 41 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C 5.5 6 6.5 7 7.5 8 Vdd SUPPLY VOLTAGE (Vdc) FREQUENCY (GHz) Absolute Maximum Ratings 58 Idd Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +4.5 62 +5.0 63 +5.5 64 +7.0 65 +7.5 66 +8.0 67 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 1-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Idd (mA) Amplifiers - low noise - Chip 1 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz HMC462 v04.1210 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. Amplifiers - low noise - Chip 1 Outline Drawing Pad Descriptions Pad Number Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2 Vdd Power supply voltage for the amplifier. External bypass capacitors are required 3 RFOUT This pad is AC coupled and matched to 50 Ohms. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 1-4 HMC462 v04.1210 Assembly Diagram Amplifiers - low noise - Chip 1 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz 1-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC462 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz 1 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 0.150mm (0.005”) Thick Moly Tab Amplifiers - low noise - Chip v04.1210 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 1-6