Final Datasheet FDFS6N754 Integrated N-Channel PowerTrench® tm MOSFET and Schottky Diode 30V, 4A, 56mΩ Features General Description Max rDS(on) = 56mΩ at VGS = 0V, ID = 4A The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO8 package. Max rDS(on) = 75mΩ at VGS = 4.5V, ID = 3.5A VF < 0.45V @ 2A This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. VF < 0.28V @ 100mA Schottky and MOSFET incorporated into single power surface mount SO-8 package Electrically independent Schottky and MOSFET pinout for design flexibility Applications DC/DC converters Low Gate Charge (Qg = 4nC) Low Miller Charge D D C C SO-8 S Pin 1 A G A A 1 8 C A 2 7 C S 3 6 D G 4 5 D MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID Ratings 30 Units V ±20 V (Note 1a) 4 -Pulsed Power Dissipation for Dual Operation PD A 20 2 Power Dissipation for Single Operation VRRM Schottky Repetitive Peak Reverse Voltage IO Schottky Average Forward Current TJ, TSTG Operating and Storage Temperature (Note 1a) W 1.6 20 (Note 1a) V 2 A -55 to 150 °C (Note 1a) 78 °C/W (Note 1) 40 °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking FDFS6N754 Device FDFS6N754 ©2006 Fairchild Semiconductor Corporation FDFS6N754 Rev. A Package SO-8 Reel Size 330mm 1 Tape Width 12mm Quantity 2500 units www.fairchildsemi.com FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode August 2006 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24V VGS = 0V IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V 30 V 24.5 mV/°C 1 TJ = 125°C 20 µA ±100 nA 2.5 V On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C VGS = 10V, ID = 4A 42 56 Drain to Source On Resistance VGS = 4.5V, ID =3.5A 53 75 VGS = 10V, ID = 4A, TJ = 125°C 61 81 VDS = 5V, ID = 4A 10 rDS(on) gFS Forward Transconductance 1 1.7 -4.2 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VDS = 15V, VGS = 0V, f = 1.0MHz f = 1.0MHz 225 299 pF 80 107 pF 42 63 pF Ω 5.1 Switching Characteristics (Note 2) td(on) Turn-On Delay Time tr Rise Time VDD = 15V, ID = 1A VGS = 10V, RGS = 6Ω 6 12 ns 8 16 ns 20 32 ns 2 10 ns td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at 10V Qg(5) Total Gate Charge at 5V Qgs Gate to Source Gate Charge 0.6 nC Qgd Gate to Drain “Miller” Charge 1 nC VDS = 15V, ID = 4A 4 6 nC 2 3 nC Drain-Source Diode Characteristics and Maximum Ratings VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 1.3A (Note 2) 0.8 1.2 V trr Reverse Recovery Time IF = 4A, di/dt = 100A/µs 13 20 ns Qrr Reverse Recovery Charge IF = 4A, di/dt = 100A/µs 4 6 nC TJ = 25oC 39 250 µA TJ = 25oC 225 Schottky Diode Characteristics VR IR Reverse Breakdown Voltage Reverse Leakage IR = 1mA VR = -10V IF = -100mA VF Forward Voltage IF = -2A 2 FDFS6N754 Rev. A 30 TJ = 125oC TJ = 125oC TJ = 25oC TJ = 125oC V 18 mA 280 140 364 450 mV 290 www.fairchildsemi.com FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TJ = 25°C unless otherwise noted a) 78°C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135°C/W when mounted on a minimun pad Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. 3 FDFS6N754 Rev. A www.fairchildsemi.com FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. 3.0 VGS = 10V VGS = 6V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 20 = 25°C unless otherwise noted VGS = 4.5V 15 VGS = 5V PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX VGS = 3.5V 10 VGS = 3V 5 VGS = 2.5V 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS = 3.0V VGS = 5V 2.0 1.5 1.0 0.5 3.0 VGS = 10V PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX 4 1 8 rDS(on), DRAIN TO 1.0 0.8 0 30 60 90 120 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 0.20 1.2 -30 150 ID = 3A 0.10 TJ = 125oC 0.05 TJ = 25oC 0.00 2 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 12 0 TJ = 125oC TJ = -55oC TJ = 1 25oC 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 5 Figure 5. Transfer Characteristics 8 10 10 1 VGS = 0V TJ = 125oC TJ = 25oC 0.1 0.01 1E-3 0.2 TJ = -55oC 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 FDFS6N754 Rev. A 6 30 VDS = 5V 4 4 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX 8 PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On Resistance vs Temperature 16 20 0.15 TJ, JUNCTION TEMPERATURE (oC) 20 16 Figure 2. On-Resistance vs Drain Current and Gate Voltage ID = 4A VGS = 10V 0.6 -60 12 ID, DRAIN CURRENT(A) Figure 1. On Region Characteristics 1.4 VGS = 6V VGS = 3.5V VDS, DRAIN TO SOURCE VOLTAGE (V) 1.6 VGS = 4.5V 2.5 www.fairchildsemi.com FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ 500 10 8 VDD = 10V 6 VDD = 20V 4 VDD = 15V 2 0 0 1 2 3 4 Coss 100 Crss 20 0.1 5 Qg, GATE CHARGE (nC) 10 9 8 7 6 5 6 4 TJ = 25oC 3 2 1 0.01 0.1 1 tAV, TIME IN AVALANCHE(ms) P(PK), PEAK TRANSIENT POWER (W) 100us 1ms 10ms 100ms 0.1 OPERATION IN THIS SINGLE PULSE TJ = MAX RATED AREA MAY BE LIMITED BY rDS(on) TA = 25OC 1 10 1s 10s DC 80 3 VGS = 4.5V 2 1 o RθJC = 40 C/W 50 75 100 125 150 100 Figure 11. Forward Bias Safe Operating Area TA = 25oC VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 10 150 – T A -----------------------125 SINGLE PULSE 1 -4 10 VDS, DRAIN-SOURCE VOLTAGE (V) -3 10 -2 -1 0 10 10 10 t, PULSE WIDTH (s) 1 10 2 10 3 10 Figure 12. Single Pulse Maximum Power Dissipation 5 FDFS6N754 Rev. A VGS = 10V Figure 10. Maximum Continuous Drain Current vs Case Temperature 10us 1 4 TC, CASE TEMPERATURE (oC) 100 10 5 0 25 2 Figure 9. Unclamped Inductive Switching Capability 0.01 0.1 40 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) Figure 7. Gate Charge Characteristics ID, DRAIN CURRENT (A) f = 1MHz VGS = 0V Ciss CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) = 25°C unless otherwise noted www.fairchildsemi.com FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ 100 10 IR, REVERSE LEAKAGE CURRENT (A) IF, FORWARD LEAKAGE CURRENT (A) = 25°C unless otherwise noted TJ = 125oC 1 TJ = 25oC 0.1 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (V) 1.2 Figure 13. Schottky Diode Forward Voltage 2 0.1 TJ = 125oC 0.01 1E-3 1E-4 TJ = 25oC 1E-5 20 1E-6 0 5 10 15 20 25 VR, REVERSE VOLATGE(V) 30 Figure 14. Schottky Diode Reverse Current DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 0.01 -4 10 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 15. Transient Thermal Response Curve 6 FDFS6N754 Rev. A www.fairchildsemi.com FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 FDFS6N754 Rev. A 7 www.fairchildsemi.com FDFS6N754 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode TRADEMARKS