HMC753LP4E v03.0111 Amplifiers - Low Noise - SMT 7 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 11 GHz Typical Applications Features This HMC753LP4E is ideal for: Noise Figure: 1.5 dB @ 4 GHz • Point-to-Point Radios Gain: 17 dB • Point-to-Multi-Point Radios P1dB Output Power: +18 dBm • Military & Space Supply Voltage: +5V @ 55 mA • Test Instrumentation Output IP3: +30 dBm 50 Ohm matched Input/Output 24 Lead Plastic 4x4mm SMT Package: 16mm2 General Description Functional Diagram The HMC753LP4E is a GaAs MMIC Low Noise Wideband Amplifier housed in a leadless 4x4 mm plastic surface mount package. The amplifier operates between 1 and 11 GHz, providing up to 16.5 dB of small signal gain, 1.5 dB noise figure, and output IP3 of +30 dBm, while requiring only 55 mA from a +5V supply. The P1dB output power of up to +18 dBm enables the LNA to function as a LO driver for balanced, I/Q or image reject mixers. The HMC753LP4E also features I/Os that are DC blocked and internally matched to 50 Ohms, making it ideal for high capacity microwave radios or VSAT applications. This versatile LNA is also available in die form as the HMC-ALH444. Electrical Specifications, TA = +25° C, Vdd= +5V, Idd = 55 mA[2] Parameter Min. Frequency Range Gain Gain Variation over Temperature Noise Figure 7-1 Typ. Max. Min. 1-6 14 16.5 10 0.004 1.5 Typ. Max. 6 - 11 2 Units GHz 14 dB 0.008 dB / °C 2 2.7 dB Input Return Loss 11 8 Output Return Loss 18 12 dB dB Output Power for 1 dB Compression 18 15 dBm Saturated Output Power (Psat) 20 17 dBm Output Third Order Intercept (IP3) 30 28 dBm Supply Current (Idd) (Vdd = 5V, set Vgg2 = 1.5V, Vgg1 = -0.8V Typ.) 55 55 mA For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC753LP4E v03.0111 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 11 GHz 25 5 GAIN (dB) RESPONSE (dB) 16 S11 S22 S21 -5 +25C +85C -40C 14 12 -15 -25 10 0 2 4 6 8 10 12 14 1 3 FREQUENCY (GHz) 7 9 11 Output Return Loss vs. Temperature 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) Input Return Loss vs. Temperature -10 +25C +85C -40C -15 5 FREQUENCY (GHz) -20 +25C +85C -40C -10 -15 Amplifiers - Low Noise - SMT 18 15 -20 -25 -25 1 3 5 7 9 11 1 3 FREQUENCY (GHz) 5 7 9 11 9 11 FREQUENCY (GHz) Output IP3 vs. Temperature Noise Figure vs. Temperature [1] 10 35 +25C +85C -40C 8 30 25 6 IP3 (dBm) NOISE FIGURE (dB) 7 Gain vs. Temperature [1] Broadband Gain & Return Loss [1] 4 20 +25C +85C -40C 15 2 10 0 5 1 3 5 7 9 11 FREQUENCY (GHz) 1 3 5 7 FREQUENCY (GHz) [1] Board loss subtracted out for gain, power and noise figure measurement For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-2 HMC753LP4E v03.0111 Psat vs. Temperature [1] 25 24 20 20 Psat (dBm) P1dB (dBm) P1dB vs. Temperature [1] 15 +25C +85C -40C 10 5 16 +25C +85C -40C 12 8 0 4 1 3 5 7 9 11 1 3 5 FREQUENCY (GHz) 7 9 11 FREQUENCY (GHz) Reverse Isolation vs. Temperature Power Compression @ 6 GHz [1] 24 Pout (dBm), GAIN (dB), PAE (%) 0 +25C +85C -40C -10 ISOLATION (dB) Amplifiers - Low Noise - SMT 7 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 11 GHz -20 -30 -40 -50 -60 1 3 5 7 9 16 12 8 4 0 -4 -20 11 Pout Gain PAE 20 -15 -10 FREQUENCY (GHz) -5 0 5 INPUT POWER (dBm) 22 7 20 6 18 5 16 4 14 3 12 2 10 1 0 8 4.5 NOISE FIGURE (dB) GAIN (dB), P1dB (dBm) Gain, Noise Figure & Power vs. Supply Voltage @ 6 GHz [1] 5 5.5 Vdd (V) [1] Board loss subtracted out for gain, power and noise figure measurement 7-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC753LP4E v03.0111 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 11 GHz Drain Bias Voltage +6.0V RF Input Power 12 dBm Gate Bias Voltage, Vgg1 -1 to 0.3V Gate Bias Voltage, Vgg2 0 to 2.5V Channel Temperature 180 °C Continuous Pdiss (T = 85 °C) (derate 8.4 mW/°C above 85 °C) 0.8 W Thermal Resistance (Channel to die bottom) 119 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Amplifiers - Low Noise - SMT 7 Absolute Maximum Ratings NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY. 3. LEAD AND GROUND PADDLE PLATING: 100% MATTE TIN 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 6. PAD BURR LENGTH SHALL BE 0.15mm MAX. PAD BURR HEIGHT SHALL BE 0.05mm MAX. 7. PACKAGE WARP SHALL NOT EXCEED 0.05mm 8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. Package Information Part Number Package Body Material HMC753LP4E RoHS-compliant Low Stress Injection Molded Plastic Package Marking [1] Lead Finish 100% matte Sn [2] 753 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-4 HMC753LP4E v03.0111 Amplifiers - Low Noise - SMT 7 7-5 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 11 GHz Pin Descriptions Pin Number Function Description 1, 2, 4 - 7, 12 - 15, 17 - 19, 24 GND Package bottom has exposed metal paddle that must be connected to RF/DC ground. 3 RFIN This pad is AC coupled and matched to 50 Ohms. 8, 9 Vgg2, 1 Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. 10 Vdd Power Supply Voltage for the amplifier. See assembly for required external components. 11, 20 - 23 N/C The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 16 RFOUT This pad is AC coupled and matched to 50 Ohms. Interface Schematic Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC753LP4E v03.0111 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 11 GHz 7 Amplifiers - Low Noise - SMT Evaluation PCB List of Materials for Evaluation PCB 122826 Item Description J1, J2 SMA Connector J3 - J6 DC Pin C1 - C3 100pF Capacitor, 0402 Pkg. C4 - C6 10,000pF Capacitor, 0603 Pkg. C7 - C9 4.7 µF Capacitor, Tantalum U1 HMC753LP4E Amplifier PCB [2] 122824 Evaluation PCB [3] [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-6