MMBTA92 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • Epitaxial Planar Die Construction Complementary NPN Types Available (MMBTA42) Ideal for Medium Power Amplification and Switching Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 4 and 5) Qualified to AEC-Q101 Standards for High Reliability B • • • Min Max C D G Mechanical Data • • • • Dim B TOP VIEW E E • • SOT-23 A C A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 H Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) Maximum Ratings K E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 α 0° 8° M J L C E B All Dimensions in mm @TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5.0 V IC -500 mA Pd 300 mW RθJA Tj, TSTG 417 °C/W -55 to +150 °C Collector Current (Note 1) (Note 3) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Notes: 1. 2. 3. 4. 5. @TA = 25°C unless otherwise specified Symbol Min Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO -300 -300 -5.0 ⎯ ⎯ ⎯ ⎯ ⎯ -250 -100 V V V nA nA ⎯ ⎯ VCE(SAT) VBE(SAT) 25 40 25 ⎯ ⎯ -0.5 -0.9 V V Ccb ⎯ 6.0 pF fT 50 ⎯ MHz hFE Test Condition IC = -100μA, IE = 0 IC = -1.0mA, IB = 0 IE = -100μA, IC = 0 VCB = -200V, IE = 0 VCE = -3.0V, IC = 0 IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -30mA, VCE = -10V IC = -20mA, IB = -2.0mA IC = -20mA, IB = -2.0mA VCB = -20V, f = 1.0MHz, IE = 0 VCE = -20V, IC = -10mA, f = 100MHz Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Short duration pulse test used to minimize self-heating effect. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance rating (RθJA), power dissipation rating (Pd) and power derating curve (figure 1). No purposefully added lead. Halogen and Antimony Free. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30060 Rev. 11 - 2 1 of 3 www.diodes.com MMBTA92 © Diodes Incorporated 1.0 Note 1 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) IC IB = 10 0.9 350 300 250 200 150 100 50 0.8 0.7 0.6 0.5 0.4 TA = 150°C 0.3 0.2 TA = 25°C 0.1 TA = -50°C 0 0 0 25 50 75 100 125 150 175 200 10 1 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature I C, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current 10,000 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) VCE = 5V hFE, DC CURRENT GAIN 1000 100 1,000 TA = 150°C 100 TA = -50°C TA = 25°C 10 1 10 1 100 VCE = 5V 0.9 TA = -50°C 0.8 0.7 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 0.2 0.1 1000 0.1 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs Collector Current fT, GAIN BANDWIDTH PRODUCT (MHz) 100 VCE = 5V 10 1 10 1 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs Collector Current DS30060 Rev. 11 - 2 2 of 3 www.diodes.com MMBTA92 © Diodes Incorporated Ordering Information (Note 6) Packaging SOT-23 Device MMBTA92-7-F Notes: 6. Shipping 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM K3R K3R = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code 1998 J Month Code Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 2003 P 2004 R May 5 2005 S Jun 6 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30060 Rev. 11 - 2 3 of 3 www.diodes.com MMBTA92 © Diodes Incorporated