FDW9926NZ Common Drain N-Channel 2.5V specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V). • 4.5 A, 20 V. RDS(ON) = 32 mΩ @ VGS = 4.5 V RDS(ON) = 45 mΩ @ VGS = 2.5 V • ESD protection diode (note 3) Applications • High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V • Low profile TSSOP-8 package • Battery protection • Load switch • Power management G2 S2 S2 D2 G1 S1 S1 D1 TSSOP-8 Pin 1 Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V ID Drain Current 4.5 A – Continuous (Note 1a) – Pulsed PD 30 Total Power Dissipation TJ, TSTG (Note 1a) 1.6 (Note 1b) 1.1 W –55 to +150 °C (Note 1a) 77 °C/W (Note 1b) 114 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 9926NZ FDW9926NZ 13’’ 12mm 2500 units 2005 Fairchild Semiconductor Corporation FDW9926NZ Rev. D(W) FDW9926NZ January 2005 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics ID = 250 µA BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage VGS = ±12 V, VDS = 0 V ±10 µA ID = 250 µA 1.5 V On Characteristics 20 V 15 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 µA, Referenced to 25°C 0.6 1 –3.1 VGS = 4.5 V, ID = 4.5 A VGS = 2.5 V, ID = 3.8 A VGS = 4.5 V, ID = 4.5A, TJ=125°C 27 38 36 gFS Forward Transconductance VDS = 5 V, ID = 4.5 A 22 S VDS = 10 V, f = 1.0 MHz V GS = 0 V, 600 pF 160 pF 90 pF 1.4 Ω mV/°C 32 45 49 mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VGS = 15 mV, f = 1.0 MHz (Note 2) 8 16 ns 8 16 ns Turn–Off Delay Time 14 26 ns Turn–Off Fall Time 4 8 ns 5.7 8 nC VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 Ω VDS = 10 V, VGS = 4.5 V ID = 4.5 A, 1.3 nC 1.7 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 0.83 A (Note 2) IF = 4.5 A, diF/dt = 100 A/µs 0.7 0.83 A 1.2 V 16 nS 5 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA is 77°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4. b) RθJA is 114 °C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDW9926NZ Rev. D(W) FDW9926NZ Electrical Characteristics FDW9926NZ Typical Characteristics 30 2.2 VGS = 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.0V ID, DRAIN CURRENT (A) 25 3.5V 2.5V 20 15 10 2.0V 5 1.8 1.6 2.5V 1.4 3.0V 1.2 3.5V 4.0V 1 4.5V 0.8 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 0 3 Figure 1. On-Region Characteristics. 5 10 15 20 ID, DRAIN CURRENT (A) 25 0.09 ID = 4.5A VGS = 4.5V RDS(ON), ON-RESISTANCE (OHM) ID = 2.25A 1.4 1.2 1 0.8 0.6 0.07 0.05 TA = 125oC 0.03 TA = 25oC 0.01 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 0 Figure 3. On-Resistance Variation with temperature. 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 30 100 VGS = 0V VDS = 5V IS, REVERSE DRAIN CURRENT (A) TA = -55oC 25 ID, DRAIN CURRENT (A) 30 Figure 2. On-Resistance Variation with Drain Current and Gate voltage. 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 2.0V 2 o 125 C 20 25oC 15 10 5 10 o 1 TA = 125 C 0.1 o 25 C 0.01 -55oC 0.001 0.0001 0 0 1 2 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW9926NZ Rev. D(W) FDW9926NZ Typical Characteristics 1000 f = 1MHz VGS = 0 V VDS = 5V ID = 4.5A 15V 4 800 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 10V 3 2 Ciss 600 400 Coss 200 1 Crss 0 0 0 1 2 3 4 Qg, GATE CHARGE (nC) 5 6 0 7 Figure 7. Gate Charge Characteristics. 8 12 16 VDS, DRAIN TO SOURCE VOLTAGE (V) P(pk), PEAK TRANSIENT POWER (W) 50 100us RDS(ON) LIMIT 1ms 10 10ms 100ms 1s 10s 1 DC VGS = 4.5V SINGLE PULSE o RθJA = 208 C/W 0.1 TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 208°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 0.1 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 20 Figure 8. Capacitance Characteristics. 100 ID, DRAIN CURRENT (A) 4 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA =208 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW9926NZ Rev. D(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ Across the board. Around the world.™ OPTOLOGIC OPTOPLANAR™ The Power Franchise PACMAN™ Programmable Active Droop™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15