Apr./2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934CM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) DESCRIPTION Outline Drawing The MGF4934CM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. FEATURES Low noise figure @ f=12GHz NFmin. = 0.50dB (Typ.) Fig.1 High associated gain @ f=12GHz Gs = 13.0dB (Typ.) MITSUBISHI Proprietary APPLICATION S to Ku band low noise amplifiers Not to be reproduced or disclosed without permission by Mitsubishi Electric QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=2V , ID=10mA ORDERING INFORMATION Tape & reel 3000pcs/reel ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO Parameter Gate to drain voltage Gate to source voltage Ratings Unit -3 V -3 V mA Total power dissipation 50 mW Channel temperature 125 °C -55 to +125 °C Drain current PT Tch Tstg Storage temperature ELECTRICAL CHARACTERISTICS V(BR)GDO (Ta=25°C ) IDSS ID Symbol Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Parameter (Ta=25°C ) Test conditions Limits Unit MIN. TYP. MAX -3.5 -- -- V -- -- 50 µA mA Gate to drain breakdown voltage IG=-10µA IGSS Gate to source leakage current VGS=-2V,VDS=0V IDSS Saturated drain current VGS=0V,VDS=2V 12 -- 60 Gate to source cut-off voltage VDS=2V,ID=500µA -0.1 -- -1.5 V Associated gain VDS=2V, 11.5 13.0 -- dB Minimum noise figure ID=10mA,f=12GHz -- 0.50 0.75 dB VGS(off) Gs NFmin. MITSUBISHI (1/5) Apr./2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934CM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) Fig.1 2.10 ±0.1 1.30 ±0.05 (0.65) (0.65) ±0.1 ±0.1 1.25 Top 2.05 0.30 +0.1 -0.05 0.40 +0.1 0.30 -0.05 ② ① ③ ② +0.05 +0.1 0.30 -0.05 +0.1 -0.05 0.11 -0 (0.60) (0.65) 0.49 ±0.05 1.25 ±0.05 Side ③ ② Unit: mm (0.85) Bottom ② ① Gate ② Source ③ Drain ① (GD-30) MITSUBISHI (2/5) Apr./2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934CM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) TYPICAL CHARACTERISTICS (Ta=25°C) ID vs. VDS (VGS=~0.1V/STEP) 50 (VDS=2V) 50 40 Drain Current, ID (mA) Drain Current, ID (mA) ID vs. VGS 30 20 10 0 40 30 20 10 0 -1 -0.5 0 Gate to Source Voltage, VGS (V) 0 NF & Gs vs. ID 15 Ta=25℃ VDS=2V Freq=12GHz Noise Figure, NF (dB) 2.00 1.80 14 13 Gs 1.60 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0.00 12 11 10 9 8 7 6 5 4 NF 0 5 10 15 Drain Current, ID (mA) Associated Gain, Gs (dB) 2.20 20 MITSUBISHI (3/5) 1 2 3 4 Drain to Source Voltage, VDS (V) Apr./2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934CM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) S PARAMETERS (VDS=2V,ID=10mA,Ta=room temperature) Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 S11 (mag) 0.990 0.985 0.930 0.860 0.802 0.737 0.668 0.599 0.533 0.477 0.442 0.421 0.406 0.405 0.425 0.460 0.503 0.547 S21 (ang) -16.3 -30.1 -43.8 -57.5 -72.1 -87.3 -103.2 -119.6 -136.5 -152.0 -168.0 175.7 159.0 142.8 126.5 110.8 94.9 80.2 (mag) 5.156 4.971 4.787 4.602 4.470 4.343 4.212 4.042 3.852 3.672 3.537 3.429 3.331 3.264 3.236 3.214 3.149 3.058 S12 (ang) 158.7 145.3 131.9 118.5 103.9 89.3 74.6 60.2 46.4 33.9 21.6 9.5 -2.4 -14.1 -26.9 -40.8 -54.5 -68.3 (mag) 0.032 0.037 0.042 0.047 0.055 0.061 0.066 0.070 0.072 0.072 0.076 0.083 0.090 0.099 0.115 0.137 0.156 0.175 S22 (ang) 79.5 70.2 60.9 51.6 43.4 36.2 29.7 24.0 18.9 17.3 17.1 17.2 15.9 14.1 10.1 5.3 -2.2 -11.2 (mag) 0.758 0.728 0.698 0.668 0.634 0.594 0.555 0.514 0.473 0.440 0.418 0.400 0.383 0.375 0.379 0.403 0.417 0.448 (ang) -9.2 -19.5 -29.9 -40.3 -50.0 -59.5 -68.9 -78.3 -87.3 -95.2 -104.2 -114.1 -124.4 -135.6 -150.3 -168.9 172.6 153.5 Noise Parameter (VDS=2V,ID=10mA, Ta=room temperature)) NFmin (dB) 0.25 0.25 0.26 0.29 0.30 0.32 0.35 0.37 0.39 0.42 0.46 0.49 0.53 0.57 Γopt (mag) (ang) 0.97 8.2 0.97 14.5 0.94 22.9 0.91 30.2 0.88 40.2 0.82 48.2 0.74 61.2 0.65 75.5 0.57 91.3 0.49 108.4 0.44 127.0 0.39 146.9 0.34 168.2 0.30 -169.1 Rn (Ω) 17.5 15.4 14.0 12.5 11.0 9.5 8.0 6.5 5.0 3.6 2.6 1.9 1.8 2.0 Reference point Reference point Gate Drain 0.96 Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 45ﾟ 2.5mm Board: εr=2.6 Thickness: 0.4mm (4-φ0.4: through-hole) MITSUBISHI (4/5) Apr./2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934CM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. 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