MCT5210/MCT5211 Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, With Base Connection FEATURES A 1 6 B C 2 5 C • Saturation CTR - MCT5211, > 100 % at IF = 1.6 mA • High isolation voltage, 5300 VRMS • Lead (Pb)-free component NC 3 4 E • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC i179004 DESCRIPTION AGENCY APPROVALS The MCT521/5211 are optocouplers with a high efficiency AIGaAs LED optically coupled to a NPN phototransistor. The high performance LED makes operation at low input currents practical. The coupler is housed in a six pin DIP package. Isolation test voltage is 5300 VRMS. Because these parts have guaranteed CTRs at 1 mA and 3 mA, they are ideally suitable for interfacing from CMOS to TTL or LSTTL to TTL. They are also ideal for telecommunications applications such as ring or off-hook detection. • UL1577, file no. E52744 system code H or J, double protection • BSI IEC 60950; IEC 60065 • DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending available with option 1 • CSA 93751 ORDER INFORMATION PART REMARKS MCT5210 CTR > 70 %, DIP-6 MCT5211 CTR > 110 %, DIP-6 MCT5211-X007 CTR > 110 %, SMD-6 (option 7) MCT5211-X009 CTR > 110 %, SMD-6 (option 9) Note For additional information on the available options refer to option information. ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Peak reverse voltage VR 6.0 V Forward continuos current IF 40 mA INPUT Power dissipation Pdiss Derate linearly from 25 °C 75 mW 1.0 mW/°C OUTPUT Collector emitter breakdown voltage BVCEO 30 V Emitter collector breakdown voltage BVECO 7.0 V Collector base breakdown voltage BVCBO 70 V Pdiss 200 mW 2.6 mW/°C Power dissipation Derate linearly from 25 °C Document Number: 83657 Rev. 1.5, 14-Jan-08 For technical questions, please contact: [email protected] www.vishay.com 1 MCT5210/MCT5211 Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, With Base Connection ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Isolation test voltage VISO 5300 VRMS Total package dissipation (LED and detector) Ptot 260 mW Derate linearly from 25 °C 3.5 mW/°C Creepage distance ≥7 mm Clearance distance ≥7 mm COUPLER Comparative tracking index per DIN IEC 112/VDE 0303, part 1 CTI 175 VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Operating temperature Tamp - 55 to + 100 °C Storage temperature Tstg - 55 to + 150 °C Isolation resistance Ω Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. 1.2 1.5 UNIT INPUT Forward voltage IF = 5.0 mA VF Reverse voltage IR = 10 µA VR 6.0 V V OUTPUT VCE = 5.0 V, IC = 100 µA hFE 100 Collector emitter breakdown voltage IC = 100 µA BVCEO 30 V Emitter collector breakdown voltage IE = 100 µA BVECO 7.0 V Collector base breakdown voltage IE = 10 µA BVCBO 70 V Collector emitter leakage voltage VCE = 10 V ICEO 5.0 100 nA DC forward current gain 200 COUPLER Saturation voltage IF = 3.0 mA, IC = 1.8 mA MCT5210 VCEsat 0.25 0.4 V IF = 1.6 mA, IC = 1.6 mA MCT5211 VCEsat 0.25 0.4 V Note Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER Current transfer ratio (collector emitter saturated) Current transfer ratio Current transfer ratio (collector base) www.vishay.com 2 TEST CONDITION PART SYMBOL MIN. TYP. VCE = 0.4 V, IF = 3.0 mA MCT5210 CTRCEsat 60 120 MAX. UNIT % VCE = 0.4 V, IF = 1.6 mA MCT5211 CTRCEsat 100 200 % VCE = 0.4 V, IF = 1.0 mA MCT5211 CTRCEsat 75 150 % VCE = 5.0 mA, IF = 3.0 mA MCT5210 CTR 70 150 % VCE = 5.0 mA, IF = 1.6 mA MCT5211 CTR 150 300 % VCE = 5.0 mA, IF = 1.0 mA MCT5211 CTR 110 225 % VCE = 4.3 V, IF = 3.0 mA MCT5210 CTRCB 0.2 0.4 % VCE = 4.3 V, IF = 1.6 mA MCT5211 CTRCB 0.3 0.6 % VCE = 4.3 V, IF = 1.0 mA MCT5211 CTRCB 0.25 0.5 % For technical questions, please contact: [email protected] Document Number: 83657 Rev. 1.5, 14-Jan-08 MCT5210/MCT5211 Optocoupler, Phototransistor Output, Vishay Semiconductors Low Input Current, With Base Connection SWITCHING CHARACTERISTICS PARAMETER Propagation delay high to low Propagation delay low to high TEST CONDITION PART SYMBOL RL = 330 Ω , IF = 3.0 mA, VCC = 5.0 V MCT5210 tPHL 10 µs RL = 750 Ω , IF = 1.6 mA, VCC = 5.0 V MCT5211 tPHL 20 µs RL = 1.5 kΩ , IF = 1.0 mA, VCC = 5.0 V MCT5211 tPHL 40 µs RL = 330 Ω , IF = 3.0 mA, VCC = 5.0 V MCT5210 tPLH 10 µs RL = 750 Ω , IF = 1.6 mA, VCC = 5.0 V MCT5211 tPLH 20 µs RL = 1.5 kΩ , IF = 1.0 mA, VCC = 5.0 V MCT5211 tPLH 40 µs V CC = 5 V MIN. TYP. MAX. UNIT IF RL Input VOUT tD VO tR t PL H V TH = 1.5 V imct5210_06 t PHL tS tF imct5210_03 Fig. 1 - Switching Schematic Fig. 2 - Switching Waveform TYPICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified 100 35 IF - LED Current - mA IF - LED Current - mA 30 25 20 15 10 5 0 1.0 1.1 1.2 1.32 VF - LED Forward Voltage - V 1 .1 1.0 1.4 1.2 1.3 1.1 VF - LED Forward Voltage - V 1.4 imct5210_02 imct5210_01 Fig. 3 - Forward Current vs. Forward Voltage Document Number: 83657 Rev. 1.5, 14-Jan-08 10 Fig. 4 - LED Forward Current vs. Forward Voltage For technical questions, please contact: [email protected] www.vishay.com 3 MCT5210/MCT5211 Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, With Base Connection 300 CTRcb - Collector Base - CTR - % 1.0 Icb - Photocurrent - μA 250 200 150 100 50 0 0 5 10 15 20 25 30 IF - LED Current - mA 35 0.8 0.6 0.4 0.2 0.0 40 imct5210_04 0.1 1 10 IF - LED Current - mA 100 imct5210_08 Fig. 5 - Collector Base Photocurrent vs. LED Current Fig. 8 - Collector Base CTR vs. LED Current 700 1000 500 Vce Ratio - % Icb - Photocurrent - μA 600 100 10 400 10 V 300 5V 1 2V 1V 0.4 V 200 .1 .1 1 10 IF - LED Current - mA 100 100 .1 1 10 IF - LED Current - mA 100 imct5210_09 imct5210_05 Fig. 9 - CTR vs. LED Current 80 1.0 Vce 10 V 70 Ice - Collector Current - mA CTRcb - Collector Base - CTR - % Fig. 6 - Photocurrent vs. LED Current 0.8 0.6 0.4 0.2 0.0 0 5 10 15 20 25 IF - LED Current - mA 30 Fig. 7 - Collector Base CTR vs. LED Current www.vishay.com 4 50 2V 40 1V 30 0.4 V 20 10 0 35 0 imct5210_10 imct5210_07 5V 60 5 10 15 IF - LED Current - mA 20 25 Fig. 10 - Collector Current vs. LED Current For technical questions, please contact: [email protected] Document Number: 83657 Rev. 1.5, 14-Jan-08 MCT5210/MCT5211 Optocoupler, Phototransistor Output, Vishay Semiconductors Low Input Current, With Base Connection 700 100 10 V 5V 2V 1V 0.4 V Vce Vce = 0.4 V 10 1 600 Ice = Icb x HFE 500 10 400 300 1 200 .1 .1 1 10 IF - LED Current - mA imct5210_11 .1 100 .1 imct5210_14 1 10 100 Icb - Photocurrent - μA 100 1000 Fig. 14 - Transfer Curve Fig. 11 - Collector Current vs. LED Current 800 70 700 60 600 500 Propagation Delay - μs HFE - DC Current Gain - (Ice/Ib) HFE - Transistor Gain IF - LED Current - mA Ice - Collector Current - mA 100 Vce 10 V 400 5V 300 2V 1V 200 tPLH IF = 1 mA 50 RL= 10 K 40 Vth = 1.5 V Vce = 5 V 30 tPHL 20 0.4 V 100 .1 1 10 100 Ib - Base Current - μA imct5210_12 10 10 5 1000 800 50 10 700 Ice = Icb x HFE 1 600 .1 .1 1 10 100 Icb - Photocurrent - μA Fig. 13 - Transfer Curve Document Number: 83657 Rev. 1.5, 14-Jan-08 Propagation Delay - μs 40 HFE - Transistor Gain IF - LED Current - mA Vce =10 V, imct5210_13 10 7 Rbe - Base Emitter Resistor - Fig. 15 - Propagation Delay vs. Base Emitter Resistor Fig. 12 - Transistor Current Gain vs. Base Current 100 10 6 imct5210_15 30 IF = 1.6 mA RL= 4.7 K Vth = 1.5 V 20 Vce = 5 V tPLH 10 0 10 5 500 1000 imct5210_16 tPHL 10 6 Rbe - Base Emitter Resistor - 10 7 Fig. 16 - Propagation Delay vs. Base Emitter Resistor For technical questions, please contact: [email protected] www.vishay.com 5 MCT5210/MCT5211 Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, With Base Connection 40 Probagation Delay - μs 35 30 tPLH IF = 3 mA RL = 3 K Vth = 1.5 V Vce = 5 V 25 20 15 10 tPHL 5 0 10 4 imct5210_17 10 5 10 6 Rbe - Base Emitter Resistor - 10 7 Fig. 17 - Propagation Delay vs. Base Emitter Resistor PACKAGE DIMENSIONS in Inches (millimeters) 3 2 1 4 5 6 Pin one ID 0.248 (6.30) 0.256 (6.50) ISO method A 0.335 (8.50) 0.343 (8.70) 0.300 (7.62) (0.45) 0.048 0.039 (1.00) min. typ. 0.022 (0.55) 0.130 (3.30) 0.150 (3.81) 18 ° 4° typ. 0.114 (2.90) 0.031 (0.80) min. 0.031 (0.80) 0.018 (0.45) 0.035 (0.90) 0.022 (0.55) 0.100 (2.54) typ. 0.130 (3.0) 3° to 9° 0.010 (0.25) typ. 0.300 to 0.347 (7.62 to 8.81) i178004 Option 7 Option 9 0.375 (9.53) 0.395 (10.03) 0.300 (7.62) typ. 0.300 (7.62) ref. 0.028 (0.7) min. 0.180 (4.6) 0.160 (4.1) 0.315 (8.0) min. 0.331 (8.4) min. 0.406 (10.3) max. www.vishay.com 6 0.0040 (0.102) 0.0098 (0.249) 0.012 (0.30) typ. 0.020 (0.51) 0.040 (1.02) 0.315 (8.00) min. 15° max. For technical questions, please contact: [email protected] 18494 Document Number: 83657 Rev. 1.5, 14-Jan-08 MCT5210/MCT5211 Optocoupler, Phototransistor Output, Vishay Semiconductors Low Input Current, With Base Connection OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number: 83657 Rev. 1.5, 14-Jan-08 For technical questions, please contact: [email protected] www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1