INFINEON IPA60R165CP

IPA60R165CP
CoolMOS® Power Transistor
Product Summary
Features
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CoolMOS CP is designed for:
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Type
Package
BI9/)K*/.<I
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Ordering Code
Marking
0- /K*/.I
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Parameter
DCI>CJDJH9G6>C 8
JGG: CI+#
Symbol Conditions
I=
Value
T < Y
+*
T < Y
*,
- JA
H: 9 9G6>C 8
JGG: CI,#
I =%af]dV
T < Y
/*
K6A6C8
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IPA60R165CP
Maximum ratings, 6IT [ Y JCA: HHDI=: GL>H: HE: 8
>;>: 9
Parameter
DCI>CJDJH9>D9: ;DGL6G9 8
JGG: CI+#
Value
Symbol Conditions
IL
Unit
+*
9
T < Y
!>D9: EJAH: 8
JGG: C ,#
I L%af]dV
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Parameter
Symbol Conditions
Values
Unit
min.
typ.
max.
Thermal characteristics
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&
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&
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Electrical characteristics, 6IT [ Y JCA
: HHDI=: GL>H: HE: 8
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Static characteristics
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HDJG8
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&
&
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V =L 3 V @L 3 T [ Y
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IPA60R165CP
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
&
+)))
&
&
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&
&
1,
&
Dynamic characteristics
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C `dd
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6E68
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V @L 3 V =L 3
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&
w<
&
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&
9
V == 3 V @L 3 I = R @ "
_d
Gate Charge Characteristics
V == 3 I = V @L ID 3
_<
Reverse Diode
!>D9: ;DGL6G9 KDAI6<:
V L=
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DK: GN I>B :
t cc
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DK: GN 8
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E6<: IPA60R165CP
1 Power dissipation
2 Safe operating area
P e`e6W"T <#
I =6W"V =L T < Y D 6)
E6G6B : I: G t a
102
40
A
>B >I: 9 7N DC
HI6I:
cVdZdeR_TV
[H
30
[H
[ H
10
1
I D [A]
P tot [W]
B H
20
B H
100
=<
10
10-1
0
0
40
80
120
100
160
101
T C [°C]
102
103
V DS [V]
3 Max. transient thermal impedance
4 Typ. output characteristics
QeYC<6W"ea#
I =6W"V =L T [ Y
E6G6B : I: G D=t a(T
E6G6B : I: G V @L
101
80
3
3
*)O
60
)'.
3
100
I D [A]
Z thJC [K/W]
)'+
)'*
40
3
)').
10-1
)')+
3
20
)')*
3
H>C<A: EJAH:
10
3
-2
10-5
0
10-4
10-3
10-2
10-1
100
101
/ : K 0
5
10
15
20
25
V DS [V]
t p [s]
E6<: IPA60R165CP
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I =6W"V =L T [ Y
R =L"`_#6W"I = T [ Y
E6G6B : I: G V @L
E6G6B : I: G V @L
40
1.2
3
3
3
3
1
3
3
3
30
3
0.8
3
3
3
R DS(on) [ ]
I D [A]
3
20
3
0.6
0.4
3
10
0.2
0
0
0
5
10
15
20
25
0
10
20
30
40
50
I D [A]
V DS [V]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R =L"`_#6W"T [ I = V @L 3
I =6W"V @L P
V =Ll7+lI =lR =L"`_#^Ri
0.5
100
0.4
80
0.3
60
21!
0.2
40
eja
Y 20
0.1
0
0
-60
-20
20
60
100
140
180
T j [°C]
/ : K Y I D [A]
R DS(on) [ ]
E6G6B : I: G T [
0
2
4
6
8
10
V GS [V]
E6<: IPA60R165CP
9 Typ. gate charge
10 Forward characteristics of reverse diode
V @L6W"Q XReV I = EJAH: 9
I ?6W"V L=#
E6G6B : I: G V ==
E6G6B : I: G T [
102
10
Y 8
Y 3
Y
10
3
Y
1
I F [A]
V GS [V]
6
4
100
2
10
0
0
10
20
30
-1
0
40
0.5
1
Q gate [nC]
1.5
2
V SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E 9L6W"T [ I = V == 3
V ;K"=LL#6W"T [ I = B 600
700
660
E AS [mJ]
V BR(DSS) [V]
400
620
200
580
0
540
20
60
100
140
180
T j [°C]
/ : K -60
-20
20
60
100
140
180
T j [°C]
E6<: IPA60R165CP
13 Typ. capacitances
14 Typ. Coss stored energy
C 6W"V =L V @L 3 f * % O
E `dd= W(V =L)
105
14
12
104
10
<Zdd
C [pF]
E oss [µJ]
103
<`dd
102
8
6
4
10
1
2
<cdd
10
0
0
0
100
200
300
400
500
/ : K 0
100
200
300
400
500
600
V DS [V]
V DS [V]
E6<: IPA60R165CP
Definition of diode switching characteristics
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PG-TO220-3-31/TO220-3-11: Outline/Fully isolated package (2500VAC; 1 minute)
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Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
"hhh'Z_WZ_V`_'T`^#'
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
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