MBRS2H100T3G, MBRA2H100T3G Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 100 VOLTS Features • • • • • MARKING DIAGRAMS Compact Package with J−Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guard−Ring for Overvoltage Protection Low Forward Voltage Drop This is a Pb−Free Device SMA CASE 403D PLASTIC AYWW A210G G SMB CASE 403A PLASTIC AYWW B210G G Mechanical Characteristics • • • • • • • • Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 70 mg (SMA), 95 mg (SMB) (Approximately) Cathode Polarity Band Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ESD Ratings: Machine Model = C, Human Body Model = 3B Device Meets MSL1 Requirements A210 = MBRA2H100T3G B210 = MBRS2H100T3G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MBRA2H100T3G SMA (Pb−Free) 5000 / Tape & Reel MBRS2H100T3G SMB (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 March, 2009 − Rev. 5 1 Publication Order Number: MBRS2H100/D MBRS2H100T3G, MBRA2H100T3G MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 100 V IO 2.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 130 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = 150°C) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) MBRA2H100 MBRS2H100 YJCL 14 12 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) MBRA2H100 MBRS2H100 RqJA 75 71 °C/W Thermal Resistance, Junction−to−Ambient (Note 3) MBRA2H100 MBRS2H100 RqJA 275 230 °C/W ELECTRICAL CHARACTERISTICS Value Characteristic Maximum Instantaneous Forward Voltage (Note 4) Maximum Instantaneous Reverse Current (Note 4) (iF = 2.0 A) (VR = 100 V) Symbol TJ = 25°C TJ = 125°C Unit vF 0.79 0.65 V IR 0.008 1.5 mA 2. Mounted with 700 mm square copper pad size (Approximately 1 inch square) 1 oz FR4 Board. 3. Mounted with minimum recommended pad size 1 oz FR4 Board. 4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 MBRS2H100T3G, MBRA2H100T3G TYPICAL CHARACTERISTICS 100 150°C 25°C 125°C 10 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) 100 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 150°C 25°C 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 10 150°C 1 IR, REVERSE CURRENT (mA) IR, REVERSE CURRENT (mA) 125°C 0.1 1.2 10 125°C 0.1 0.01 0.001 25°C 0.0001 0.00001 10 0 10 20 30 40 50 60 70 80 90 100 150°C 1 125°C 0.1 0.01 0.001 25°C 0 VR, REVERSE VOLTAGE (V) 10 20 30 40 50 60 70 80 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 3 90 100 MBRS2H100T3G, MBRA2H100T3G TYPICAL CHARACTERISTICS 4.0 TJ = 25°C f = 1 MHz 350 300 250 200 150 100 50 IF(AV), AVERAGE FORWARD CURRENT (A) 0 0 10 20 30 40 50 60 70 90 80 100 RqJA = 100°C/W 2.0 Square Wave 1.0 40 60 80 100 120 160 175 140 R(t) (C/W) 130 140 150 170 160 TJ = 175°C 4 Square Wave 3 dc 2 1 0 0 1 2 3 4 5 IO, AVERAGE FORWARD CURRENT (A) Figure 8. Maximum Forward Power Dissipation Figure 7. Current Derating, Ambient 10 120 5 TA, AMBIENT TEMPERATURE (°C) 100 110 Figure 6. Current Derating − Lead dc 20 1.0 Figure 5. Typical Capacitance RqJA = 71°C/W 0 Square Wave 2.0 TL, LEAD TEMPERATURE (°C) dc 0 3.0 VR, REVERSE VOLTAGE (V) 4.0 3.0 RqJL = 14°C/W dc 0 100 PFO, AVERAGE POWER DISSIPATION (W) C, CAPACITANCE (pF) 400 IF(AV), AVERAGE FORWARD CURRENT (A) 450 50% (DUTY CYCLE) 20% 10% 5.0% 2.0% 1.0 1.0% 0.1 SINGLE PULSE 0.01 SMB Die X 1.8 mm Die Y 1.8 mm PCB Cu Area 645.2 mm2 PCB Cu thk 1.0 oz 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 PULSE TIME (s) Figure 9. Thermal Response, Junction−to−Ambient (1 inch pad) − MBRS2H100 http://onsemi.com 4 100 1000 MBRS2H100T3G, MBRA2H100T3G TYPICAL CHARACTERISTICS 1000 50% (DUTY CYCLE) R(t) (C/W) 100 10 1.0 20% 10% 5.0% 2.0% 1.0% 0.1 0.01 SMB Die X 1.8 mm Die Y 1.8 mm PCB Cu Area 11.8 mm2 PCB Cu thk 1.0 oz SINGLE PULSE 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 100 1000 100 1000 PULSE TIME (s) Figure 10. Thermal Response, Junction−to−Ambient (min pad) − MBRS2H100 100 R(t) (C/W) 10 50% (DUTY CYCLE) 20% 10% 5.0% 2.0% 1.0 1.0% 0.1 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 PULSE TIME (s) Figure 11. Thermal Response, Junction−to−Ambient (1 inch pad) − MBRA2H100 1000 50% (DUTY CYCLE) R(t) (C/W) 100 10 1.0 20% 10% 5.0% 2.0% 1.0% 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 PULSE TIME (s) Figure 12. Thermal Response, Junction−to−Ambient (min pad) − MBRA2H100 http://onsemi.com 5 MBRS2H100T3G, MBRA2H100T3G 2.5 2.0 oz POWER DISSIPATION (W) Power Based on TA = 25°C 2.0 1.0 oz 1.5 1.0 0.5 0 0 100 200 300 400 500 600 700 COPPER AREA (sq mm) Figure 13. PD, Junction−to−Ambient (URS copper area) http://onsemi.com 6 MBRS2H100T3G, MBRA2H100T3G PACKAGE DIMENSIONS SMA CASE 403D−02 ISSUE F HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02. E b DIM A A1 b c D E HE L D POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) MIN 1.97 0.05 1.27 0.15 2.29 4.06 4.83 0.76 MILLIMETERS NOM MAX 2.10 2.20 0.10 0.15 1.45 1.63 0.28 0.41 2.60 2.92 4.32 4.57 5.21 5.59 1.14 1.52 A L c A1 SOLDERING FOOTPRINT* 4.0 0.157 2.0 0.0787 2.0 0.0787 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MIN 0.078 0.002 0.050 0.006 0.090 0.160 0.190 0.030 INCHES NOM 0.083 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MAX 0.087 0.006 0.064 0.016 0.115 0.180 0.220 0.060 MBRS2H100T3G, MBRA2H100T3G PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE G HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. E b DIM A A1 b c D E HE L L1 D MIN 1.90 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.13 2.45 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.075 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.084 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.096 0.008 0.087 0.012 0.156 0.181 0.220 0.063 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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