MBR1025 Chips for Schottky Diodes Chip Specification General Description: Schottky Diode chips with Mo-barrier for switch mode power rectifiers with the following features: * Guard-ring for stress protection * Extremely low forward voltage * 125 ℃ operation junction temperature * reverse avalanche behavior Mechanical Data: MBR1025passivated Silicon Chip Dimension(mil): 108x128 mil Thickness: 350 +- 20 µm Metallization: Top ( Anode ) : Al (AlAg)* Bottom ( Cathode) : TiNiAg Forward Current (A): Reverse Voltage (V): Type MBR1025 10A >27V Chip IRM@VRMM VF(V)@25 C VF(V)@25 C size(mil) at If =10A at If =20A at 25 C 108x128 <0,4V <0,5V 0,6mA * Avaible in both variants expected value for recommended assembling with both side soldering Typical device : PBYL1025, 19TQ015