IXYS IXGH36N60A3D4

Preliminary Technical Information
GenX3TM 600V IGBT
with Diode
IXGH36N60A3D4
VCES = 600V
IC110 = 36A
VCE(sat) ≤ 1.4V
Ultra Low Vsat PT IGBT for
up to 5kHz switching
TO-247 (IXGH)
Symbol
Test Conditions
Maximum Ratings
VCES
TC = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C, RGE = 1MΩ
600
V
VGES
Continuous
± 20
V
VGEM
Transient
± 30
V
IC110
IF110
TC = 110°C
TC = 110°C
36
10
A
A
ICM
TC = 25°C, 1ms
200
A
SSOA
VGE = 15V, TVJ = 125°C, RG = 5Ω
ICM = 60
A
(RBSOA)
Clamped inductive load @ ≤ 600V
PC
TC = 25°C
220
W
-55 ... +150
°C
z
TJM
150
°C
z
Tstg
-55 ... +150
°C
z
TJ
TL
1.6mm (0.062 in.) from case for 10s
300
°C
TSOLD
Plastic body for 10 seconds
260
°C
Md
Mounting torque
1.13/10
Nm/lb.in.
6.0
g
Weight
G
C
E
G = Gate
E = Emitter
(TAB)
C
= Collector
TAB = Collector
Features
z
Optimized for low conduction losses
Square RBSOA
Anti-parallel ultra fast diode
International standard package
Advantages
z
z
High power density
Low gate drive requirement
Applications
z
z
z
z
Symbol Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min.
VGE(th)
IC = 250μA, VCE = VGE
ICES
VCE = 0.8 • VCES
VGE = 0V
3.0
Typ.
Max.
5.0
z
V
75 μA
TJ = 125°C
IGES
VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 30A, VGE = 15V, Note 1
© 2008 IXYS CORPORATION, All rights reserved
z
z
z
z
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
500 μA
±100 nA
1.4
V
DS99724A(07/08)
IXGH36N60A3D4
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
Characteristic Values
Min.
Typ.
Max.
IC = 30A, VCE = 10V, Note 1
25
TO-247 (IXGH) Outline
42
S
2380
pF
115
pF
Cres
30
pF
Qg
80
nC
Cies
Coes
Qge
VCE = 25V, VGE = 0V, f = 1MHz
12
nC
Qgc
36
nC
td(on)
18
ns
tri
Eon
td(off)
tfi
IC = 30A, VGE = 15V, VCE = 0.5 • VCES
Inductive Load, TJ = 25°C
IC = 30A, VGE = 15V
VCE = 400V, RG = 5Ω
Eoff
td(on)
tri
Inductive Load, TJ = 25°C
Eon
td(off)
tfi
IC = 30A, VGE = 15V
VCE = 400V, RG = 5Ω
Eoff
23
ns
0.74
mJ
330
ns
325
ns
3.00
mJ
18
ns
25
ns
1.50
mJ
500
ns
500
ns
5.30
mJ
RthJC
∅P
e
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
2.2
2.6
A2
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
0.56 °C/W
RthCS
0.21
°C/W
Reverse Diode (FRED)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VF
IRM
trr
IF = 10A, VGE = 0V, Note 1
Characteristic Values
Min.
Typ.
Max.
TJ = 150°C
1.7
3.0
V
V
TJ = 100°C
60
ns
IF = 10A, -diF/dt = 200A/μs
VR = 300V
TJ = 25°C
TJ = 100°C
3
4
RthJC
A
A
2.5 °C/W
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGH36N60A3D4
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
300
60
VGE = 15V
13V
11V
9V
55
50
240
210
40
IC - Amperes
IC - Amperes
45
VGE = 15V
13V
11V
270
7V
35
30
25
20
9V
180
150
120
7V
90
15
60
10
5V
5
30
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
5V
0
2.0
2
4
6
Fig. 3. Output Characteristics
@ 125ºC
10
12
16
1.4
VGE = 15V
13V
11V
9V
50
45
VGE = 15V
1.3
VCE(sat) - Normalized
55
40
35
7V
30
25
20
15
10
0
C
= 60A
I
C
= 30A
I
C
= 15A
1.1
1.0
0.9
0.8
5V
I
1.2
5
0.7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
2.0
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
200
4.0
180
TJ = 25ºC
3.5
160
3.0
140
I
2.5
C
IC - Amperes
VCE - Volts
14
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
60
IC - Amperes
8
VCE - Volts
VCE - Volts
= 60A
30A
15A
2.0
120
100
80
60
1.5
TJ = 125ºC
25ºC
- 40ºC
40
1.0
20
0.5
0
5
6
7
8
9
10
11
12
VGE - Volts
© 2008 IXYS CORPORATION, All rights reserved
13
14
15
3.5
4.0
4.5
5.0
5.5
6.0
VGE - Volts
6.5
7.0
7.5
8.0
8.5
IXGH36N60A3D4
Fig. 17. Gate Charge
Fig. 7. Transconductance
80
16
60
14
I C = 30A
I G = 10 mA
12
25ºC
50
VGE - Volts
g f s - Siemens
VCE = 600V
TJ = - 40ºC
70
125ºC
40
30
10
8
6
20
4
10
2
0
0
0
20
40
60
80
100
120
140
160
180
200
0
10
20
30
40
50
60
70
30
35
80
QG - NanoCoulombs
IC - Amperes
Fig. 19. Reverse-Bias Safe Operating Area
Fig. 18. Capacitance
70
10,000
f = 1 MHz
Capacitance - PicoFarads
60
IC - Amperes
50
40
30
20
10
TJ = 125ºC
Cies
1,000
Coes
100
RG = 5Ω
dV / dt < 10V / ns
0
100
200
300
400
500
600
10
700
0
5
10
VCE - Volts
15
20
25
40
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_36N60A3(55) 07-03-08-A
IXGH36N60A3D4
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
Fig. 13. Inductive Switching Energy Loss vs.
Junction Temperature
11
10
Eon -
Eoff
I
---
C
= 60A
3.6
10
3.2
9
8
2.4
7
2.0
6
20
30
40
50
60
70
80
90
8
1.4
7
1.2
6
I
0.6
0.8
0.4
0.4
2
0.0
100 110 120
1
I
25
35
45
55
1.8
115
0.0
125
6
1.0
TJ = 125ºC
0.8
TJ = 25ºC
0.6
- MilliJoules
1.2
on
7
t f - Nanoseconds
1.4
td(off) - - - -
1200
1100
VCE = 400V
800
1000
750
900
700
I C = 60A
650
800
700
600
I
C
600
= 15A, 30A
3
0.4
550
500
2
0.2
500
400
0.0
450
15
20
25
30
35
40
45
50
55
0
60
10
20
30
40
Fig. 16. Inductive Turn-off Switching Times
vs. Collector Current
850
600
750
RG = 5Ω , VGE = 15V
540
700
VCE = 400V
510
td(off) - - - -
420
500
390
450
360
400
330
TJ = 25ºC
300
IC - Amperes
© 2008 IXYS CORPORATION, All rights reserved
60
C
= 15A, 30A, 60A
440
400
360
400
320
280
300
55
I
450
350
50
480
`
500
240
45
520
550
270
40
560
VCE = 400V
600
250
35
600
650
300
30
td(off) - - - -
RG = 5Ω , VGE = 15V
700
t f - Nanoseconds
450
TJ = 125ºC
25
300
100 110 120
640
tf
750
t d(off) - Nanoseconds
480
20
90
800
570
650
15
80
25
35
45
55
65
75
85
95
TJ - Degrees Centigrade
105
115
240
125
t d(off) - Nanoseconds
tf
350
70
Fig. 17. Inductive Turn-off Switching Times
vs. Junction Temperature
800
550
60
RG - Ohms
IC - Amperes
600
50
t d(off) - Nanoseconds
8
1
t f - Nanoseconds
105
TJ = 125ºC, VGE = 15V
850
1.6
VCE = 400V
4
95
0.2
1300
tf
900
E
Eoff - MilliJoules
----
RG = 5Ω , VGE = 15V
5
85
950
2.0
9
75
= 15A
Fig. 15. Inductive Turn-off Switching Times
vs. Gate Resistance
11
10
65
C
TJ - Degrees Centigrade
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
Eon
1.0
= 30A
C
3
RG - Ohms
Eoff
1.6
= 60A
C
4
I C = 15A
10
I
1.2
4
0
VCE = 400V
0.8
5
2
1.8
RG = 5Ω , VGE = 15V
5
1.6
I C = 30A
3
----
- MilliJoules
2.8
VCE = 400V
Eon
on
TJ = 125ºC , VGE = 15V
2.0
Eoff
E
9
Eon - MilliJoules
Eoff - MilliJoules
11
4.0
Eoff - MilliJoules
12
IXGH36N60A3D4
Fig. 18. Inductive Turn-on Switching Times
vs. Gate Resistance
150
td(on) - - - -
TJ = 125ºC, VGE = 15V
120
65
27
100
60
26
70
75
60
t r - Nanoseconds
90
I C = 30A
50
45
40
I
30
C
= 15A
30
45
60
70
80
90
20
I C = 30A
19
18
15
5
50
21
20
10
100 110 120
40
22
25
0
30
23
td(on) - - - -
VCE = 400V
30
10
20
24
RG = 5Ω , VGE = 15V
35
20
10
tr
40
15
0
25
I C = 60A
50
17
I
25
RG - Ohms
t d(on) - Nanoseconds
80
t d(on) - Nanoseconds
105
60
55
90
I C = 60A
VCE = 400V
110
t r - Nanoseconds
tr
135
Fig. 19. Inductive Turn-on Switching Times
vs. Junction Temperature
35
45
55
65
75
85
C
95
16
= 15A
105
115
15
125
TJ - Degrees Centigrade
Fig. 20. Inductive Turn-on Switching Times
vs. Collector Current
60
25
tr
55
24
RG = 5Ω , VGE = 15V
50
23
VCE = 400V
45
22
TJ = 125ºC
40
21
TJ = 25ºC
35
20
30
19
25
18
20
17
15
16
10
t d(on) - Nanoseconds
t r - Nanoseconds
td(on) - - - -
15
15
20
25
30
35
40
45
50
55
60
IC - Amperes
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_36N60A3(55) 07-03-08-A
IXGH36N60A3D4
30
250
A
nC
25
20
T VJ = 100°C
15
IF = 5 A
150
IF = 10 A
8
IRM
Qr
IF = 5 A
A
V R = 300 V
200
T VJ = 150°C
IF
10
T VJ = 100°C
IF = 20 A
6
I F = 10 A
I F = 20 A
100
4
50
2
T VJ = 100°C
10
5
0
T VJ = 25°C
0
1
2
0
100
V
3
VF
Fig. 21. Forward current IF versus VF
Fig. 22. Reverse recovery charge Qr
2.0
ns
V R = 300 V
400
600 A/μs
800 1000
-diF/dt
0.3
T VJ = 100°C
μs
I F = 10 A
V FR
40
IF = 5 A
80
0.2
I F = 10 A
1.0
I F = 20 A
I RM
60
20
t fr
V FR
0.5
Qr
0.0
200
Fig. 23. Peak reverse current IRM
V
trr
Kf
0
60
T VJ = 100°C
100
1.5
0
A/μs 1000
-diF/dt
V R = 300 V
0
40
40
80
120 C 160
0
200
T VJ
400
600
800 1000
A/μs
0
0
200
400
-diF/dt
Fig. 24. Dynamic parameters Qr, IRM
Fig. 25. Recovery time trr versus -diF/dt
10
0.0
600 A/μs
800 1000
diF/dt
Fig. 26. Peak forward voltage VFR and
Constants for ZthJC calculation:
K/W
i
1
1
2
Z thJC
0.1
0.01
0.001
0.00001
0.1
DSEP 8-06B
0.0001
0.001
0.01
Fig. 27. Transient thermal resistance junction-to-case
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2008 IXYS CORPORATION, All rights reserved
0.1
s
t
1
Rthi (K/W)
ti (s)
1.449
0.5578
0.0052
0.0003
t fr