CYPRESS CY7C1412KV18

CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
36-Mbit QDR® II SRAM Two-Word
Burst Architecture
36-Mbit QDR® II SRAM Two-Word Burst Architecture
Features
Configurations
Separate independent read and write data ports
❐ Supports concurrent transactions
CY7C1425KV18 – 4 M × 9
■
333 MHz clock for high bandwidth
CY7C1414KV18 – 1 M × 36
■
Two-word burst on all accesses
Functional Description
■
Double data rate (DDR) Interfaces on both read and write ports
(data transferred at 666 MHz) at 333 MHz
■
Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■
Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
■
Echo clocks (CQ and CQ) simplify data capture in high speed
systems
■
Single multiplexed address input bus latches address inputs
for both read and write ports
■
Separate port selects for depth expansion
■
Synchronous internally self-timed writes
■
QDR® II operates with 1.5 cycle read latency when DOFF is
asserted HIGH
The CY7C1425KV18, CY7C1412KV18, and CY7C1414KV18
are 1.8 V synchronous pipelined SRAMs, equipped with QDR II
architecture. QDR II architecture consists of two separate ports:
the read port and the write port to access the memory array. The
read port has dedicated data outputs to support read operations
and the write port has dedicated data inputs to support write
operations. QDR II architecture has separate data inputs and
data outputs to completely eliminate the need to “turnaround” the
data bus that exists with common I/O devices. Access to each
port is through a common address bus. Addresses for read and
write addresses are latched on alternate rising edges of the input
(K) clock. Accesses to the QDR II read and write ports are
completely independent of one another. To maximize data
throughput, both read and write ports are equipped with DDR
interfaces. Each address location is associated with two 9-bit
words (CY7C1425KV18), 18-bit words (CY7C1412KV18), or
36-bit words (CY7C1414KV18) that burst sequentially into or out
of the device. Because data can be transferred into and out of
the device on every rising edge of both input clocks (K and K and
C and C), memory bandwidth is maximized while simplifying
system design by eliminating bus turnarounds.
■
■
Operates similar to QDR I device with 1 cycle read latency when
DOFF is asserted LOW
■
Available in × 9, × 18, and × 36 configurations
■
Full data coherency, providing most current data
■
Core VDD = 1.8 V (±0.1 V); I/O VDDQ = 1.4 V to VDD
❐ Supports both 1.5 V and 1.8 V I/O supply
■
Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
■
Offered in both Pb-free and non Pb-free Packages
■
Variable drive HSTL output buffers
■
JTAG 1149.1 compatible test access port
■
Phase locked loop (PLL) for accurate data placement
CY7C1412KV18 – 2 M × 18
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Selection Guide
Description
Maximum operating frequency
Maximum operating current
Cypress Semiconductor Corporation
Document Number: 001-57825 Rev. *I
•
198 Champion Court
•
333 MHz
300 MHz
250 MHz
Unit
333
300
250
MHz
×9
730
680
590
mA
× 18
750
700
610
× 36
910
850
730
San Jose, CA 95134-1709
•
408-943-2600
Revised March 20, 2013
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
Logic Block Diagram – CY7C1425KV18
K
CLK
Gen.
DOFF
21
Address
Register
Read Add. Decode
K
Write
Reg
2M x 9 Array
A(20:0)
Address
Register
Write
Reg
2M x 9 Array
21
9
Write Add. Decode
D[8:0]
A(20:0)
RPS
Control
Logic
C
Read Data Reg.
C
CQ
18
VREF
WPS
BWS[0]
9
Control
Logic
Reg.
9
Reg.
Reg.
CQ
9
9
9
Q[8:0]
Logic Block Diagram – CY7C1412KV18
K
CLK
Gen.
DOFF
20
Address
Register
Read Add. Decode
K
Write
Reg
1M x 18 Array
Address
Register
Write
Reg
1M x 18 Array
A(19:0)
20
18
Write Add. Decode
D[17:0]
A(19:0)
RPS
Control
Logic
C
Read Data Reg.
C
CQ
36
VREF
WPS
BWS[1:0]
18
Control
Logic
Document Number: 001-57825 Rev. *I
18
Reg.
Reg. 18
Reg.
18
CQ
18
Q[17:0]
Page 2 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
Logic Block Diagram – CY7C1414KV18
K
CLK
Gen.
DOFF
19
Address
Register
Read Add. Decode
K
Write
Reg
512K x 36 Array
Address
Register
Write
Reg
512K x 36 Array
A(18:0)
19
36
Write Add. Decode
D[35:0]
A(18:0)
RPS
Control
Logic
C
Read Data Reg.
C
CQ
72
VREF
WPS
BWS[3:0]
36
Control
Logic
Document Number: 001-57825 Rev. *I
36
Reg.
Reg. 36
Reg.
36
CQ
36
Q[35:0]
Page 3 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
Contents
Pin Configurations ........................................................... 5
Pin Definitions .................................................................. 7
Functional Overview ........................................................ 9
Read Operations ......................................................... 9
Write Operations ......................................................... 9
Byte Write Operations ................................................. 9
Concurrent Transactions ............................................. 9
Depth Expansion ......................................................... 9
Programmable Impedance .......................................... 9
Echo Clocks ................................................................ 9
PLL ............................................................................ 10
Application Example ...................................................... 10
Truth Table ...................................................................... 11
Write Cycle Descriptions ............................................... 11
Write Cycle Descriptions ............................................... 12
Write Cycle Descriptions ............................................... 12
IEEE 1149.1 Serial Boundary Scan (JTAG) .................. 13
Disabling the JTAG Feature ...................................... 13
Test Access Port ....................................................... 13
Performing a TAP Reset ........................................... 13
TAP Registers ........................................................... 13
TAP Instruction Set ................................................... 13
TAP Controller State Diagram ....................................... 15
TAP Controller Block Diagram ...................................... 16
TAP Electrical Characteristics ...................................... 16
TAP AC Switching Characteristics ............................... 17
TAP Timing and Test Conditions .................................. 18
Identification Register Definitions ................................ 19
Document Number: 001-57825 Rev. *I
Scan Register Sizes ....................................................... 19
Instruction Codes ........................................................... 19
Boundary Scan Order .................................................... 20
Power Up Sequence in QDR II SRAM ........................... 21
Power Up Sequence ................................................. 21
PLL Constraints ......................................................... 21
Maximum Ratings ........................................................... 22
Operating Range ............................................................. 22
Neutron Soft Error Immunity ......................................... 22
Electrical Characteristics ............................................... 22
DC Electrical Characteristics ..................................... 22
AC Electrical Characteristics ..................................... 24
Capacitance .................................................................... 24
Thermal Resistance ........................................................ 24
AC Test Loads and Waveforms ..................................... 24
Switching Characteristics .............................................. 25
Switching Waveforms .................................................... 27
Ordering Information ...................................................... 28
Ordering Code Definitions ......................................... 29
Package Diagram ............................................................ 30
Acronyms ........................................................................ 31
Document Conventions ................................................. 31
Units of Measure ....................................................... 31
Document History Page ................................................. 32
Sales, Solutions, and Legal Information ...................... 33
Worldwide Sales and Design Support ....................... 33
Products .................................................................... 33
PSoC Solutions ......................................................... 33
Page 4 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
Pin Configurations
The pin configurations for CY7C1425KV18, CY7C1412KV18, and CY7C1414KV18 follow. [1]
Figure 1. 165-ball FBGA (13 × 15 × 1.4 mm) pinout
CY7C1425KV18 (4 M × 9)
1
2
3
4
A
CQ
B
NC
NC/72M
A
WPS
NC
NC
A
C
NC
NC
NC
VSS
D
NC
D5
NC
VSS
5
6
7
8
NC
K
NC/144M
RPS
NC/288M
K
BWS0
A
A
A
A
VSS
VSS
VSS
VSS
9
10
11
A
A
CQ
NC
NC
Q4
NC
NC
D4
VSS
NC
NC
NC
E
NC
NC
Q5
VDDQ
VSS
VSS
VSS
VDDQ
NC
D3
Q3
F
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
G
NC
D6
Q6
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
Q2
D2
K
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
L
NC
Q7
D7
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q1
M
NC
NC
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
D1
N
NC
D8
NC
VSS
A
A
A
VSS
NC
NC
NC
P
NC
NC
Q8
A
A
C
A
A
NC
D0
Q0
R
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
Note
1. NC/72M, NC/144M and NC/288M are not connected to the die and can be tied to any voltage level.
Document Number: 001-57825 Rev. *I
Page 5 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
Pin Configurations (continued)
The pin configurations for CY7C1425KV18, CY7C1412KV18, and CY7C1414KV18 follow. [1]
Figure 1. 165-ball FBGA (13 × 15 × 1.4 mm) pinout
CY7C1412KV18 (2 M × 18)
1
2
3
4
5
6
7
8
9
10
11
A
CQ
NC/144M
A
WPS
BWS1
K
NC/288M
RPS
A
NC/72M
CQ
B
NC
Q9
D9
A
NC
K
BWS0
A
NC
NC
Q8
C
NC
NC
D10
VSS
A
A
A
VSS
NC
Q7
D8
D
NC
D11
Q10
VSS
VSS
VSS
VSS
VSS
NC
NC
D7
E
NC
NC
Q11
VDDQ
VSS
VSS
VSS
VDDQ
NC
D6
Q6
F
NC
Q12
D12
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
Q5
G
NC
D13
Q13
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
D5
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
D14
VDDQ
VDD
VSS
VDD
VDDQ
NC
Q4
D4
K
NC
NC
Q14
VDDQ
VDD
VSS
VDD
VDDQ
NC
D3
Q3
L
NC
Q15
D15
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q2
M
NC
NC
D16
VSS
VSS
VSS
VSS
VSS
NC
Q1
D2
N
NC
D17
Q16
VSS
A
A
A
VSS
NC
NC
D1
P
NC
NC
Q17
A
A
C
A
A
NC
D0
Q0
R
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
9
10
11
CY7C1414KV18 (1 M × 36)
1
2
3
NC/288M NC/72M
4
5
6
7
8
A
CQ
WPS
BWS2
K
BWS1
RPS
A
NC/144M
CQ
B
Q27
Q18
D18
A
BWS3
K
BWS0
A
D17
Q17
Q8
C
D27
Q28
D19
VSS
A
A
A
VSS
D16
Q7
D8
D
D28
D20
Q19
VSS
VSS
VSS
VSS
VSS
Q16
D15
D7
E
Q29
D29
Q20
VDDQ
VSS
VSS
VSS
VDDQ
Q15
D6
Q6
F
Q30
Q21
D21
VDDQ
VDD
VSS
VDD
VDDQ
D14
Q14
Q5
G
D30
D22
Q22
VDDQ
VDD
VSS
VDD
VDDQ
Q13
D13
D5
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
D31
Q31
D23
VDDQ
VDD
VSS
VDD
VDDQ
D12
Q4
D4
K
Q32
D32
Q23
VDDQ
VDD
VSS
VDD
VDDQ
Q12
D3
Q3
L
Q33
Q24
D24
VDDQ
VSS
VSS
VSS
VDDQ
D11
Q11
Q2
M
D33
Q34
D25
VSS
VSS
VSS
VSS
VSS
D10
Q1
D2
N
D34
D26
Q25
VSS
A
A
A
VSS
Q10
D9
D1
P
Q35
D35
Q26
A
A
C
A
A
Q9
D0
Q0
R
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
Document Number: 001-57825 Rev. *I
Page 6 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
Pin Definitions
Pin Name
I/O
Pin Description
D[x:0]
InputData input signals. Sampled on the rising edge of K and K clocks during valid write operations.
synchronous CY7C1425KV18  D[8:0]
CY7C1412KV18  D[17:0]
CY7C1414KV18  D[35:0]
WPS
InputWrite port select  active LOW. Sampled on the rising edge of the K clock. When asserted active, a
synchronous write operation is initiated. Deasserting deselects the write port. Deselecting the write port ignores D[x:0].
BWS0,
BWS1,
BWS2,
BWS3
InputByte write select 0, 1, 2, and 3  active LOW. Sampled on the rising edge of the K and K clocks during
synchronous write operations. Used to select which byte is written into the device during the current portion of the
write operations. Bytes not written remain unaltered.
CY7C1425KV18 BWS0 controls D[8:0].
CY7C1412KV18  BWS0 controls D[8:0] and BWS1 controls D[17:9].
CY7C1414KV18  BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18] and BWS3
controls D[35:27].
All the byte write selects are sampled on the same edge as the data. Deselecting a byte write select
ignores the corresponding byte of data and it is not written into the device.
A
InputAddress inputs. Sampled on the rising edge of the K (read address) and K (write address) clocks during
synchronous active read and write operations. These address inputs are multiplexed for both read and write
operations. Internally, the device is organized as 4 M × 9 (2 arrays each of 2 M × 9) for CY7C1425KV18,
2 M × 18 (2 arrays each of 1 M × 18) for CY7C1412KV18, and 1 M × 36 (2 arrays each of 512 K × 36)
for CY7C1414KV18. Therefore, only 21 address inputs are needed to access the entire memory array
of CY7C1425KV18, 20 address inputs for CY7C1412KV18, and 19 address inputs for CY7C1414KV18.
These inputs are ignored when the appropriate port is deselected.
Q[x:0]
OutputData output signals. These pins drive out the requested data during a read operation. Valid data is
synchronous driven out on the rising edge of the C and C clocks during read operations, or K and K when in single
clock mode. When the read port is deselected, Q[x:0] are automatically tristated.
CY7C1425KV18  Q[8:0]
CY7C1412KV18  Q[17:0]
CY7C1414KV18  Q[35:0]
RPS
InputRead port select  active LOW. Sampled on the rising edge of positive input clock (K). When active, a
synchronous read operation is initiated. Deasserting deselects the read port. When deselected, the pending access
is allowed to complete and the output drivers are automatically tristated following the next rising edge of
the C clock. Each read access consists of a burst of two sequential transfers.
C
Input clock
Positive input clock for output data. C is used in conjunction with C to clock out the read data from
the device. Use C and C together to deskew the flight times of various devices on the board back to the
controller. See Application Example on page 10 for further details.
C
Input clock
Negative input clock for output data. C is used in conjunction with C to clock out the read data from
the device. Use C and C together to deskew the flight times of various devices on the board back to the
controller. See Application Example on page 10 for further details.
K
Input clock
Positive input clock input. The rising edge of K is used to capture synchronous inputs to the device
and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising
edge of K.
K
Input clock
Negative input clock input. K is used to capture synchronous inputs being presented to the device and
to drive out data through Q[x:0] when in single clock mode.
CQ
Echo clock
CQ referenced with respect to C. This is a free running clock and is synchronized to the input clock
for output data (C) of the QDR II. In single clock mode, CQ is generated with respect to K. The timing
for the echo clocks is shown in Switching Characteristics on page 25.
CQ
Echo clock
CQ referenced with respect to C. This is a free running clock and is synchronized to the input clock
for output data (C) of the QDR II. In single clock mode, CQ is generated with respect to K. The timing
for the echo clocks is shown in the Switching Characteristics on page 25.
Document Number: 001-57825 Rev. *I
Page 7 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
Pin Definitions (continued)
Pin Name
I/O
Pin Description
ZQ
Input
Output impedance matching input. This input is used to tune the device outputs to the system data
bus impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 × RQ, where RQ is a resistor
connected between ZQ and ground. Alternatively, connect this pin directly to VDDQ, which enables the
minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.
DOFF
Input
PLL turn off  active LOW. Connecting this pin to ground turns off the PLL inside the device. The timing
in the operation with the PLL turned off differs from those listed in this data sheet. For normal operation,
connect this pin to a pull up through a 10 K or less pull-up resistor. The device behaves in QDR I mode
when the PLL is turned off. In this mode, the device can be operated at a frequency of up to 167 MHz
with QDR I timing.
TDO
Output
TDO pin for JTAG.
TCK
Input
TCK pin for JTAG.
TDI
Input
TDI pin for JTAG.
TMS
Input
TMS pin for JTAG.
NC
N/A
Not connected to the die. Can be tied to any voltage level.
NC/72M
Input
Not connected to the die. Can be tied to any voltage level.
NC/144M
Input
Not connected to the die. Can be tied to any voltage level.
NC/288M
Input
Not connected to the die. Can be tied to any voltage level.
VREF
VDD
VSS
VDDQ
Inputreference
Reference voltage input. Static input used to set the reference level for HSTL inputs, outputs, and AC
measurement points.
Power supply Power supply inputs to the core of the device.
Ground
Ground for the device.
Power supply Power supply inputs for the outputs of the device.
Document Number: 001-57825 Rev. *I
Page 8 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
Functional Overview
The CY7C1425KV18, CY7C1412KV18, and CY7C1414KV18
are synchronous pipelined burst SRAMs with a read port and a
write port. The read port is dedicated to read operations and the
write port is dedicated to write operations. Data flows into the
SRAM through the write port and flows out through the read port.
These devices multiplex the address inputs to minimize the
number of address pins required. By having separate read and
write ports, the QDR II completely eliminates the need to turn
around the data bus and avoids any possible data contention,
thereby simplifying system design. Each access consists of two
9-bit data transfers in the case of CY7C1425KV18, two 18-bit
data transfers in the case of CY7C1412KV18, and two 36-bit
data transfers in the case of CY7C1414KV18 in one clock cycle.
This device operates with a read latency of one and half cycles
when DOFF pin is tied HIGH. When DOFF pin is set LOW or
connected to VSS then the device behaves in QDR I mode with
a read latency of one clock cycle.
Accesses for both ports are initiated on the rising edge of the
positive input clock (K). All synchronous input timing is
referenced from the rising edge of the input clocks (K and K) and
all output timing is referenced to the output clocks (C and C, or
K and K when in single clock mode).
All synchronous data inputs (D[x:0]) pass through input registers
controlled by the input clocks (K and K). All synchronous data
outputs (Q[x:0]) pass through output registers controlled by the
rising edge of the output clocks (C and C, or K and K when in
single clock mode).
All synchronous control (RPS, WPS, BWS[x:0]) inputs pass
through input registers controlled by the rising edge of the input
clocks (K and K).
CY7C1412KV18 is described in the following sections. The
same basic descriptions apply to CY7C1425KV18, and
CY7C1414KV18.
Read Operations
The CY7C1412KV18 is organized internally as two arrays of
1 M × 18. Accesses are completed in a burst of two sequential
18-bit data words. Read operations are initiated by asserting
RPS active at the rising edge of the positive input clock (K). The
address is latched on the rising edge of the K clock. The address
presented to the address inputs is stored in the read address
register. Following the next K clock rise, the corresponding
lowest order 18-bit word of data is driven onto the Q[17:0] using
C as the output timing reference. On the subsequent rising edge
of C, the next 18-bit data word is driven onto the Q[17:0]. The
requested data is valid 0.45 ns from the rising edge of the output
clock (C and C or K and K when in single clock mode).
Synchronous internal circuitry automatically tristates the outputs
following the next rising edge of the output clocks (C/C). This
enables for a seamless transition between devices without the
insertion of wait states in a depth expanded memory.
Write Operations
Write operations are initiated by asserting WPS active at the
rising edge of the positive input clock (K). On the same K clock
rise the data presented to D[17:0] is latched and stored into the
Document Number: 001-57825 Rev. *I
lower 18-bit write data register, provided BWS[1:0] are both
asserted active. On the subsequent rising edge of the negative
input clock (K), the address is latched and the information
presented to D[17:0] is also stored into the write data register,
provided BWS[1:0] are both asserted active. The 36 bits of data
are then written into the memory array at the specified location.
When deselected, the write port ignores all inputs after the
pending write operations are completed.
Byte Write Operations
Byte write operations are supported by the CY7C1412KV18. A
write operation is initiated as described in the Write Operations
section. The bytes that are written are determined by BWS0 and
BWS1, which are sampled with each set of 18-bit data words.
Asserting the appropriate byte write select input during the data
portion of a write latches the data being presented and writes it
into the device. Deasserting the byte write select input during the
data portion of a write enables the data stored in the device for
that byte to remain unaltered. This feature is used to simplify
read, modify, or write operations to a byte write operation.
Concurrent Transactions
The read and write ports on the CY7C1412KV18 operate
completely independently of one another. As each port latches
the address inputs on different clock edges, the user can read or
write to any location, regardless of the transaction on the other
port. The user can start reads and writes in the same clock cycle.
If the ports access the same location at the same time, the SRAM
delivers the most recent information associated with the
specified address location. This includes forwarding data from a
write cycle that was initiated on the previous K clock rise.
Depth Expansion
The CY7C1412KV18 has a port select input for each port. This
enables for easy depth expansion. Both port selects are sampled
on the rising edge of the positive input clock only (K). Each port
select input can deselect the specified port. Deselecting a port
does not affect the other port. All pending transactions (read and
write) are completed before the device is deselected.
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ pin
on the SRAM and VSS to enable the SRAM to adjust its output
driver impedance. The value of RQ must be 5X the value of the
intended line impedance driven by the SRAM. The allowable
range of RQ to guarantee impedance matching with a tolerance
of ±15% is between 175  and 350 , with VDDQ = 1.5 V. The
output impedance is adjusted every 1024 cycles upon power-up
to account for drifts in supply voltage and temperature.
Echo Clocks
Echo clocks are provided on the QDR II to simplify data capture
on high speed systems. Two echo clocks are generated by the
QDR II. CQ is referenced with respect to C and CQ is referenced
with respect to C. These are free running clocks and are
synchronized to the output clock of the QDR II. In the single clock
mode, CQ is generated with respect to K and CQ is generated
with respect to K. The timing for the echo clocks is shown in
Switching Characteristics on page 25.
Page 9 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
PLL
These chips use a PLL which is designed to function between
120 MHz and the specified maximum clock frequency. During
power up, when the DOFF is tied HIGH, the PLL is locked after
20 s of stable clock. The PLL can also be reset by slowing or
stopping the input clocks K and K for a minimum of 30 ns.
However, it is not necessary to reset the PLL to lock to the
desired frequency. The PLL automatically locks 20 s after a
stable clock is presented. The PLL may be disabled by applying
ground to the DOFF pin. When the PLL is turned off, the device
behaves in QDR I mode (with one cycle latency and a longer
access time).
Application Example
Figure 2 shows two QDR II used in an application.
Figure 2. Application Example
SRAM #1
Vt
R
D
A
R
P
S
#
W
P
S
#
B
W
S
#
ZQ
CQ/CQ#
Q
C C# K K#
DATA IN
DATA OUT
Address
RPS#
BUS
WPS#
MASTER
BWS#
(CPU CLKIN/CLKIN#
or
Source K
ASIC)
Source K#
R = 250ohms
SRAM #2
R
P
S
#
D
A
R
W
P
S
#
B
W
S
#
ZQ R = 250ohms
CQ/CQ#
Q
C C# K K#
Vt
Vt
Delayed K
Delayed K#
R
R = 50ohms Vt = Vddq/2
Document Number: 001-57825 Rev. *I
Page 10 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
Truth Table
The truth table for CY7C1425KV18, CY7C1412KV18, and CY7C1414KV18 follow. [2, 3, 4, 5, 6, 7]
Operation
K
RPS WPS
DQ
DQ
Write cycle:
Load address on the rising edge of K;
input write data on K and K rising edges.
L–H
X
L
D(A + 0) at K(t) 
Read cycle:
Load address on the rising edge of K;
wait one and a half cycle; read data on C and C rising edges.
L–H
L
X
Q(A + 0) at C(t + 1)  Q(A + 1) at C(t + 2) 
NOP: No operation
L–H
H
H
D=X
Q = high Z
D=X
Q = high Z
Stopped
X
X
Previous state
Previous state
Standby: Clock stopped
D(A + 1) at K(t) 
Write Cycle Descriptions
The write cycle description table for CY7C1412KV18 follow. [2, 8]
BWS0
BWS1
K
K
L
L
L–H
–
L
L
–
L
H
L–H
L
H
–
H
L
L–H
H
L
–
H
H
L–H
H
H
–
Comments
During the data portion of a write sequence
CY7C1412KV18 both bytes (D[17:0]) are written into the device.
L–H During the data portion of a write sequence:
CY7C1412KV18 both bytes (D[17:0]) are written into the device.
–
During the data portion of a write sequence:
CY7C1412KV18 only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
L–H During the data portion of a write sequence
CY7C1412KV18 only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
–
During the data portion of a write sequence
CY7C1412KV18 only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
L–H During the data portion of a write sequence
CY7C1412KV18 only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
–
No data is written into the devices during this portion of a write operation.
L–H No data is written into the devices during this portion of a write operation.
Notes
2. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.
3. Device powers up deselected with the outputs in a tristate condition.
4. “A” represents address location latched by the devices when transaction was initiated. A + 0, A + 1 represents the internal address sequence in the burst.
5. “t” represents the cycle at which a read/write operation is started. t + 1, and t + 2 are the first, and second clock cycles respectively succeeding the “t” clock cycle.
6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
7. Ensure that when the clock is stopped K = K and C = C = HIGH. This is not essential, but permits most rapid restart by overcoming transmission line charging
symmetrically.
8. Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. BWS0, BWS1, BWS2, and BWS3 can be altered on different portions
of a write cycle, as long as the setup and hold requirements are achieved.
Document Number: 001-57825 Rev. *I
Page 11 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
Write Cycle Descriptions
The write cycle description table for CY7C1425KV18 follow. [9, 10]
BWS0
K
K
L
L–H
–
L
–
H
L–H
H
–
Comments
During the data portion of a write sequence, the single byte (D[8:0]) is written into the device.
L–H During the data portion of a write sequence, the single byte (D[8:0]) is written into the device.
–
No data is written into the device during this portion of a write operation.
L–H No data is written into the device during this portion of a write operation.
Write Cycle Descriptions
The write cycle description table for CY7C1414KV18 follow. [9, 11]
BWS0
BWS1
BWS2
BWS3
K
K
Comments
L
L
L
L
L–H
–
During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
L
L
L
L
–
L
H
H
H
L–H
L
H
H
H
–
H
L
H
H
L–H
H
L
H
H
–
H
H
L
H
L–H
H
H
L
H
–
H
H
H
L
L–H
H
H
H
L
–
H
H
H
H
L–H
H
H
H
H
–
L–H During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
–
During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
L–H During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
–
During the data portion of a write sequence, only the byte (D[17:9]) is written into the
device. D[8:0] and D[35:18] remains unaltered.
L–H During the data portion of a write sequence, only the byte (D[17:9]) is written into the
device. D[8:0] and D[35:18] remains unaltered.
–
During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
L–H During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
–
During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
L–H During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
–
No data is written into the device during this portion of a write operation.
L–H No data is written into the device during this portion of a write operation.
Notes
9. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.
10. Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. BWS0, BWS1, BWS2, and BWS3 can be altered on different portions
of a write cycle, as long as the setup and hold requirements are achieved.
11. Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. BWS0, BWS1, BWS2, and BWS3 can be altered on different portions
of a write cycle, as long as the setup and hold requirements are achieved.
Document Number: 001-57825 Rev. *I
Page 12 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
IEEE 1149.1 Serial Boundary Scan (JTAG)
These SRAMs incorporate a serial boundary scan test access
port (TAP) in the FBGA package. This part is fully compliant with
IEEE Standard #1149.1-2001. The TAP operates using JEDEC
standard 1.8 V I/O logic levels.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are
internally pulled up and may be unconnected. They may
alternatively be connected to VDD through a pull-up resistor. TDO
must be left unconnected. Upon power-up, the device comes up
in a reset state, which does not interfere with the operation of the
device.
Test Access Port
Test Clock
The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.
Test Mode Select (TMS)
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. This pin may be left
unconnected if the TAP is not used. The pin is pulled up
internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI pin is used to serially input information into the registers
and can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction that
is loaded into the TAP instruction register. For information about
loading the instruction register, see the TAP Controller State
Diagram on page 15. TDI is internally pulled up and can be
unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register.
Test Data-Out (TDO)
The TDO output pin is used to serially clock data out from the
registers. The output is active, depending upon the current state
of the TAP state machine (see Instruction Codes on page 19).
The output changes on the falling edge of TCK. TDO is
connected to the least significant bit (LSB) of any register.
Performing a TAP Reset
A Reset is performed by forcing TMS HIGH (VDD) for five rising
edges of TCK. This Reset does not affect the operation of the
SRAM and is performed when the SRAM is operating. At power
up, the TAP is reset internally to ensure that TDO comes up in a
high Z state.
TAP Registers
Registers are connected between the TDI and TDO pins to scan
the data in and out of the SRAM test circuitry. Only one register
can be selected at a time through the instruction registers. Data
is serially loaded into the TDI pin on the rising edge of TCK. Data
is output on the TDO pin on the falling edge of TCK.
Document Number: 001-57825 Rev. *I
Instruction Register
Three-bit instructions are serially loaded into the instruction
register. This register is loaded when it is placed between the TDI
and TDO pins, as shown in TAP Controller Block Diagram on
page 16. Upon power-up, the instruction register is loaded with
the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state, as described
in the previous section.
When the TAP controller is in the Capture-IR state, the two least
significant bits are loaded with a binary “01” pattern to enable
fault isolation of the board level serial test path.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This enables shifting of data through the SRAM
with minimal delay. The bypass register is set LOW (VSS) when
the BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all of the input and
output pins on the SRAM. Several No Connect (NC) pins are also
included in the scan register to reserve pins for higher density
devices.
The boundary scan register is loaded with the contents of the
RAM input and output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and TDO
pins when the controller is moved to the Shift-DR state. The
EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions are
used to capture the contents of the input and output ring.
The Boundary Scan Order on page 20 shows the order in which
the bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected to
TDI, and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and can be shifted out when the TAP controller is in
the Shift-DR state. The ID register has a vendor code and other
information described in Identification Register Definitions on
page 19.
TAP Instruction Set
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in Instruction
Codes on page 19. Three of these instructions are listed as
RESERVED and must not be used. The other five instructions
are described in this section in detail.
Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO pins. To execute
the instruction after it is shifted in, the TAP controller must be
moved into the Update-IR state.
Page 13 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
IDCODE
BYPASS
The IDCODE instruction loads a vendor-specific, 32-bit code into
the instruction register. It also places the instruction register
between the TDI and TDO pins and shifts the IDCODE out of the
device when the TAP controller enters the Shift-DR state. The
IDCODE instruction is loaded into the instruction register at
power up or whenever the TAP controller is supplied a
Test-Logic-Reset state.
When the BYPASS instruction is loaded in the instruction register
and the TAP is placed in a Shift-DR state, the bypass register is
placed between the TDI and TDO pins. The advantage of the
BYPASS instruction is that it shortens the boundary scan path
when multiple devices are connected together on a board.
SAMPLE Z
The SAMPLE Z instruction connects the boundary scan register
between the TDI and TDO pins when the TAP controller is in a
Shift-DR state. The SAMPLE Z command puts the output bus
into a high Z state until the next command is supplied during the
Update IR state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the input and output pins is captured
in the boundary scan register.
The TAP controller clock can only operate at a frequency up to
20 MHz, while the SRAM clock operates more than an order of
magnitude faster. Because there is a large difference in the clock
frequencies, it is possible that during the Capture-DR state, an
input or output undergoes a transition. The TAP may then try to
capture a signal while in transition (metastable state). This does
not harm the device, but there is no guarantee as to the value
that is captured. Repeatable results may not be possible.
To guarantee that the boundary scan register captures the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller’s capture setup plus hold
times (tCS and tCH). The SRAM clock input might not be captured
correctly if there is no way in a design to stop (or slow) the clock
during a SAMPLE/PRELOAD instruction. If this is an issue, it is
still possible to capture all other signals and simply ignore the
value of the CK and CK captured in the boundary scan register.
EXTEST
The EXTEST instruction drives the preloaded data out through
the system output pins. This instruction also connects the
boundary scan register for serial access between the TDI and
TDO in the Shift-DR controller state.
EXTEST OUTPUT BUS TRISTATE
IEEE Standard 1149.1 mandates that the TAP controller be able
to put the output bus into a tristate mode.
The boundary scan register has a special bit located at bit #108.
When this scan cell, called the “extest output bus tristate,” is
latched into the preload register during the Update-DR state in
the TAP controller, it directly controls the state of the output
(Q-bus) pins, when the EXTEST is entered as the current
instruction. When HIGH, it enables the output buffers to drive the
output bus. When LOW, this bit places the output bus into a
high Z condition.
This bit is set by entering the SAMPLE/PRELOAD or EXTEST
command, and then shifting the desired bit into that cell, during
the Shift-DR state. During Update-DR, the value loaded into that
shift-register cell latches into the preload register. When the
EXTEST instruction is entered, this bit directly controls the output
Q-bus pins. Note that this bit is pre-set LOW to enable the output
when the device is powered up, and also when the TAP controller
is in the Test-Logic-Reset state.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
After the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the boundary
scan register between the TDI and TDO pins.
PRELOAD places an initial data pattern at the latched parallel
outputs of the boundary scan register cells before the selection
of another boundary scan test operation.
The shifting of data for the SAMPLE and PRELOAD phases can
occur concurrently when required, that is, while the data
captured is shifted out, the preloaded data can be shifted in.
Document Number: 001-57825 Rev. *I
Page 14 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
TAP Controller State Diagram
The state diagram for the TAP controller follows. [12]
1
TEST-LOGIC
RESET
0
0
TEST-LOGIC/
IDLE
1
SELECT
DR-SCAN
1
1
SELECT
IR-SCAN
0
0
1
1
CAPTURE-DR
CAPTURE-IR
0
0
SHIFT-DR
0
SHIFT-IR
1
1
EXIT1-DR
1
EXIT1-IR
0
0
PAUSE-IR
1
0
1
EXIT2-DR
0
EXIT2-IR
1
1
UPDATE-IR
UPDATE-DR
1
1
0
PAUSE-DR
0
0
0
1
0
Note
12. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.
Document Number: 001-57825 Rev. *I
Page 15 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
TAP Controller Block Diagram
0
Bypass Register
2
Selection
Circuitry
TDI
1
0
Selection
Circuitry
Instruction Register
31
30
29
.
.
2
1
0
1
0
TDO
Identification Register
108
.
.
.
.
2
Boundary Scan Register
TCK
TAP Controller
TMS
TAP Electrical Characteristics
Over the Operating Range
Parameter [13, 14, 15]
Description
Test Conditions
Min
Max
Unit
VOH1
Output HIGH voltage
IOH =2.0 mA
1.4
–
V
VOH2
Output HIGH voltage
IOH =100 A
1.6
–
V
VOL1
Output LOW voltage
IOL = 2.0 mA
–
0.4
V
VOL2
Output LOW voltage
IOL = 100 A
–
0.2
V
VIH
Input HIGH voltage
VIL
Input LOW voltage
IX
Input and output load current
0.65 × VDD VDD + 0.3
GND  VI  VDD
V
–0.3
0.35 × VDD
V
–5
5
A
Notes
13. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics on page 22.
14. Overshoot: VIH(AC) < VDDQ + 0.85 V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > 1.5 V (Pulse width less than tCYC/2).
15. All voltage referenced to Ground.
Document Number: 001-57825 Rev. *I
Page 16 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
TAP AC Switching Characteristics
Over the Operating Range
Parameter [16, 17]
Description
Min
Max
Unit
50
–
ns
TCK clock frequency
–
20
MHz
TCK clock HIGH
20
–
ns
TCK clock LOW
20
–
ns
tTCYC
TCK clock cycle time
tTF
tTH
tTL
Setup Times
tTMSS
TMS setup to TCK clock rise
5
–
ns
tTDIS
TDI setup to TCK clock rise
5
–
ns
tCS
Capture setup to TCK rise
5
–
ns
Hold Times
tTMSH
TMS hold after TCK clock rise
5
–
ns
tTDIH
TDI hold after clock rise
5
–
ns
tCH
Capture hold after clock rise
5
–
ns
tTDOV
TCK clock LOW to TDO valid
–
10
ns
tTDOX
TCK clock LOW to TDO invalid
0
–
ns
Output Times
Notes
16. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register.
17. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns.
Document Number: 001-57825 Rev. *I
Page 17 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
TAP Timing and Test Conditions
Figure 3 shows the TAP timing and test conditions. [18]
Figure 3. TAP Timing and Test Conditions
0.9V
ALL INPUT PULSES
1.8V
50
0.9V
TDO
0V
Z0 = 50
(a)
CL = 20 pF
tTH
GND
tTL
Test Clock
TCK
tTMSH
tTMSS
tTCYC
Test Mode Select
TMS
tTDIS
tTDIH
Test Data In
TDI
Test Data Out
TDO
tTDOV
tTDOX
Note
18. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns.
Document Number: 001-57825 Rev. *I
Page 18 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
Identification Register Definitions
Value
Instruction Field
Description
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
000
000
000
Cypress device ID (28:12)
11010011010001111
11010011010010111
11010011010100111
Cypress JEDEC ID (11:1)
00000110100
00000110100
00000110100
Allows unique
identification of SRAM
vendor.
1
1
1
Indicates the presence
of an ID register.
Revision number (31:29)
ID register presence (0)
Version number.
Defines the type of
SRAM.
Scan Register Sizes
Register Name
Bit Size
Instruction
3
Bypass
1
ID
32
Boundary scan
109
Instruction Codes
Instruction
Code
Description
EXTEST
000
Captures the input and output ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and TDO.
This operation does not affect SRAM operation.
SAMPLE Z
010
Captures the input and output contents. Places the boundary scan register between TDI and
TDO. Forces all SRAM output drivers to a high Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures the input and output contents. Places the boundary scan register between TDI and
TDO. Does not affect the SRAM operation.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operation.
Document Number: 001-57825 Rev. *I
Page 19 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
Boundary Scan Order
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
0
6R
28
10G
56
6A
84
1J
1
6P
29
9G
57
5B
85
2J
2
6N
30
11F
58
5A
86
3K
3
7P
31
11G
59
4A
87
3J
4
7N
32
9F
60
5C
88
2K
5
7R
33
10F
61
4B
89
1K
6
8R
34
11E
62
3A
90
2L
7
8P
35
10E
63
2A
91
3L
8
9R
36
10D
64
1A
92
1M
9
11P
37
9E
65
2B
93
1L
10
10P
38
10C
66
3B
94
3N
11
10N
39
11D
67
1C
95
3M
12
9P
40
9C
68
1B
96
1N
13
10M
41
9D
69
3D
97
2M
14
11N
42
11B
70
3C
98
3P
15
9M
43
11C
71
1D
99
2N
16
9N
44
9B
72
2C
100
2P
17
11L
45
10B
73
3E
101
1P
18
11M
46
11A
74
2D
102
3R
19
9L
47
10A
75
2E
103
4R
20
10L
48
9A
76
1E
104
4P
21
11K
49
8B
77
2F
105
5P
22
10K
50
7C
78
3F
106
5N
23
9J
51
6C
79
1G
107
5R
24
9K
52
8A
80
1F
108
Internal
25
10J
53
7A
81
3G
26
11J
54
7B
82
2G
27
11H
55
6B
83
1H
Document Number: 001-57825 Rev. *I
Page 20 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
Power Up Sequence in QDR II SRAM
PLL Constraints
QDR II SRAMs must be powered up and initialized in a
predefined manner to prevent undefined operations.
■
PLL uses K clock as its synchronizing input. The input must
have low phase jitter, which is specified as tKC Var.
■
The PLL functions at frequencies down to 120 MHz.
■
If the input clock is unstable and the PLL is enabled, then the
PLL may lock onto an incorrect frequency, causing unstable
SRAM behavior. To avoid this, provide 20 s of stable clock to
relock to the desired clock frequency.
Power Up Sequence
■
Apply power and drive DOFF either HIGH or LOW (All other
inputs can be HIGH or LOW).
❐ Apply VDD before VDDQ.
❐ Apply VDDQ before VREF or at the same time as VREF.
❐ Drive DOFF HIGH.
■
Provide stable DOFF (HIGH), power and clock (K, K) for 20 s
to lock the PLL.
~
~
Figure 4. Power Up Waveforms
K
K
~
~
Unstable Clock
> 20μs Stable clock
Start Normal
Operation
Clock Start (Clock Starts after V DD / V DDQ Stable)
VDD / VDDQ
DOFF
Document Number: 001-57825 Rev. *I
V DD / V DDQ Stable (< +/- 0.1V DC per 50ns )
Fix HIGH (or tie to VDDQ)
Page 21 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
Maximum Ratings
Operating Range
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Range
Storage temperature ................................ –65 °C to +150 °C
Commercial
Ambient temperature
with power applied ................................... –55 °C to +125 °C
Industrial
Supply voltage on VDD relative to GND .......–0.5 V to +2.9 V
Ambient
Temperature (TA)
VDD[20]
VDDQ[20]
0 °C to +70 °C
1.8 ± 0.1 V
1.4 V to
VDD
–40 °C to +85 °C
Neutron Soft Error Immunity
Supply voltage on VDDQ relative to GND ...... –0.5 V to +VDD
DC applied to outputs in high Z ........ –0.5 V to VDDQ + 0.5 V
DC input voltage [19] ........................... –0.5 V to VDD + 0.5 V
Parameter
Latch-up current .................................................... > 200 mA
Test
Conditions Typ
Max*
Unit
LSBU
Logical
single-bit
upsets
25 °C
197
216
FIT/
Mb
LMBU
Logical
Multi-Bit
upsets
25 °C
0
0.01
FIT/
Mb
Single event
latchup
85 °C
0
0.1
FIT/
Dev
Current into outputs (LOW) ........................................ 20 mA
Static discharge voltage
(MIL-STD-883, M. 3015) ......................................... > 2001 V
Description
SEL
* No LMBU or SEL events occurred during testing; this column represents a
statistical 2, 95% confidence limit calculation. For more details refer to
Application Note AN 54908 “Accelerated Neutron SER Testing and Calculation
of Terrestrial Failure Rates”.
Electrical Characteristics
Over the Operating Range
DC Electrical Characteristics
Over the Operating Range
Parameter [21]
Description
Test Conditions
Min
Typ
Max
Unit
VDD
Power supply voltage
1.7
1.8
1.9
V
VDDQ
I/O supply voltage
1.4
1.5
VDD
V
VOH
Output HIGH voltage
Note 22
VDDQ/2 – 0.12
–
VDDQ/2 + 0.12
V
VOL
Output LOW voltage
Note 23
VDDQ/2 – 0.12
–
VDDQ/2 + 0.12
V
VOH(LOW)
Output HIGH voltage
IOH =0.1 mA, nominal impedance
VDDQ – 0.2
–
VDDQ
V
VOL(LOW)
Output LOW voltage
IOL = 0.1 mA, nominal impedance
VSS
–
0.2
V
VIH
Input HIGH voltage
VREF + 0.1
–
VDDQ + 0.3
V
VIL
Input LOW voltage
–0.3
–
VREF – 0.1
V
IX
Input leakage current
GND  VI  VDDQ
5
–
5
A
IOZ
Output leakage current
GND  VI  VDDQ, output disabled
5
–
5
A
0.68
0.75
0.95
V
VREF
Input reference voltage
[24]
Typical value = 0.75 V
Notes
19. Overshoot: VIH(AC) < VDDQ + 0.85 V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > 1.5 V (Pulse width less than tCYC/2).
20. Power-up: Assumes a linear ramp from 0 V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ  VDD.
21. All voltage referenced to Ground.
22. Output are impedance controlled. IOH = (VDDQ/2)/(RQ/5) for values of 175   RQ 350 .
23. Output are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175   RQ  350 .
24. VREF(min) = 0.68 V or 0.46 VDDQ, whichever is larger, VREF(max) = 0.95 V or 0.54 VDDQ, whichever is smaller.
Document Number: 001-57825 Rev. *I
Page 22 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
Electrical Characteristics (continued)
Over the Operating Range
DC Electrical Characteristics (continued)
Over the Operating Range
Parameter [21]
IDD
[25]
ISB1
Description
VDD operating supply
Automatic power-down
current
Test Conditions
Min
Typ
Max
Unit
VDD = Max, IOUT = 0 mA, 333 MHz (× 9)
f = fMAX = 1/tCYC
(× 18)
–
–
730
mA
–
–
750
(× 36)
–
–
910
300 MHz (× 9)
–
–
680
(× 18)
–
–
700
(× 36)
–
–
850
250 MHz (× 9)
–
–
590
(× 18)
–
–
610
(× 36)
–
–
730
333 MHz (× 9)
–
–
280
(× 18)
–
–
280
(× 36)
–
–
280
300 MHz (× 9)
–
–
270
(× 18)
–
–
270
(× 36)
–
–
270
250 MHz (× 9)
–
–
260
(× 18)
–
–
260
(× 36)
–
–
260
Max VDD,
both ports deselected,
VIN  VIH or VIN  VIL
f = fMAX = 1/tCYC,
Inputs Static
mA
mA
mA
mA
mA
Note
25. The operation current is calculated with 50% read cycle and 50% write cycle.
Document Number: 001-57825 Rev. *I
Page 23 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
AC Electrical Characteristics
Over the Operating Range
Parameter [26]
Description
Test Conditions
Min
Typ
Max
Unit
VIH
Input HIGH voltage
VREF + 0.2
–
–
V
VIL
Input LOW voltage
–
–
VREF – 0.2
V
Max
Unit
4
pF
4
pF
Capacitance
Parameter [27]
Description
Test Conditions
TA = 25 C, f = 1 MHz, VDD = 1.8 V, VDDQ = 1.5 V
CIN
Input capacitance
CO
Output capacitance
Thermal Resistance
Parameter [27]
Description
JA
Thermal resistance
(junction to ambient)
JC
Thermal resistance
(junction to case)
165-ball FBGA Unit
Package
Test Conditions
Test conditions follow standard test methods and
procedures for measuring thermal impedance, in
accordance with EIA/JESD51.
13.7
°C/W
3.73
°C/W
AC Test Loads and Waveforms
Figure 5. AC Test Loads and Waveforms
VREF = 0.75 V
VREF
0.75 V
VREF
OUTPUT
DEVICE
UNDER
TEST
ZQ
Z0 = 50 
RL = 50 
VREF = 0.75 V
R = 50 
ALL INPUT PULSES
1.25 V
0.75 V
OUTPUT
DEVICE
UNDER
TEST ZQ
RQ =
250 
(a)
0.75 V
INCLUDING
JIG AND
SCOPE
5 pF
[28]
0.25 V
SLEW RATE= 2 V/ns
RQ =
250 
(b)
Notes
26. Overshoot: VIH(AC) < VDDQ + 0.85 V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > 1.5 V (Pulse width less than tCYC/2).
27. Tested initially and after any design or process change that may affect these parameters.
28. Unless otherwise noted, test conditions are based on signal transition time of 2 V/ns, timing reference levels of 0.75 V, Vref = 0.75 V, RQ = 250 , VDDQ = 1.5 V, input
pulse levels of 0.25 V to 1.25 V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of Figure 5.
Document Number: 001-57825 Rev. *I
Page 24 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
Switching Characteristics
Over the Operating Range
Parameters [29, 30]
Cypress Consortium
Parameter Parameter
333 MHz
Description
VDD(typical) to the first access [31]
tPOWER
300 MHz
250 MHz
Unit
Min
Max
Min
Max
Min
Max
1
–
1
–
1
–
ms
tCYC
tKHKH
K clock and C clock cycle time
3.0
8.4
3.3
8.4
4.0
8.4
ns
tKH
tKHKL
Input clock (K/K; C/C) HIGH
1.20
–
1.32
–
1.6
–
ns
tKL
tKLKH
Input clock (K/K; C/C) LOW
1.20
–
1.32
–
1.6
–
ns
tKHKH
tKHKH
K clock rise to K clock rise and C
to C rise (rising edge to rising
edge)
1.35
–
1.49
–
1.8
–
ns
tKHCH
tKHCH
K/K clock rise to C/C clock rise
(rising edge to rising edge)
0
1.30
0
1.45
0
1.8
ns
Setup Times
tSA
tAVKH
Address set-up to K clock rise
0.3
–
0.3
–
0.35
–
ns
tSC
tIVKH
Control set-up to K clock rise
(RPS, WPS)
0.3
–
0.3
–
0.35
–
ns
tSCDDR
tIVKH
DDR control set-up to clock (K/K)
rise (BWS0, BWS1, BWS2, BWS3)
0.3
–
0.3
–
0.35
–
ns
tSD
tDVKH
D[X:0] set-up to clock (K/K) rise
0.3
–
0.3
–
0.35
–
ns
tHA
tKHAX
Address hold after K clock rise
0.3
–
0.3
–
0.35
–
ns
tHC
tKHIX
Control hold after K clock rise
(RPS, WPS)
0.3
–
0.3
–
0.35
–
ns
tHCDDR
tKHIX
DDR control hold after clock (K/K)
rise (BWS0, BWS1, BWS2, BWS3)
0.3
–
0.3
–
0.35
–
ns
tHD
tKHDX
D[X:0] hold after clock (K/K) rise
0.3
–
0.3
–
0.35
–
ns
Hold Times
Notes
29. Unless otherwise noted, test conditions are based on signal transition time of 2 V/ns, timing reference levels of 0.75 V, Vref = 0.75 V, RQ = 250 , VDDQ = 1.5 V, input
pulse levels of 0.25 V to 1.25 V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of Figure 5 on page 24.
30. When a part with a maximum frequency above 250 MHz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is
operated and outputs data with the output timings of that frequency range.
31. This part has a voltage regulator internally; tPOWER is the time that the power must be supplied above VDD(minimum) initially before initiating a read or write operation.
Document Number: 001-57825 Rev. *I
Page 25 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
Switching Characteristics (continued)
Over the Operating Range
Parameters [29, 30]
Cypress Consortium
Parameter Parameter
333 MHz
Description
300 MHz
250 MHz
Unit
Min
Max
Min
Max
Min
Max
–
0.45
–
0.45
–
0.45
ns
Output Times
tCO
tCHQV
C/C clock rise (or K/K in single
clock mode) to data valid
tDOH
tCHQX
Data output hold after output C/C
clock rise (active to active)
–0.45
–
–0.45
–
–0.45
–
ns
tCCQO
tCHCQV
C/C clock rise to echo clock valid
–
0.45
–
0.45
–
0.45
ns
tCQOH
tCHCQX
Echo clock hold after C/C clock
rise
–0.45
–
–0.45
–
–0.45
–
ns
tCQD
tCQHQV
Echo clock high to data valid
0.27
–
0.30
ns
tCQDOH
tCQHQX
Echo clock high to data invalid
0.25
[32]
–0.25
–
–0.27
–
–0.30
–
ns
1.25
–
1.40
–
1.75
–
ns
1.25
–
1.40
–
1.75
–
ns
–
0.45
–
0.45
–
0.45
ns
–0.45
–
–0.45
–
–0.45
–
ns
tCQH
tCQHCQL
Output clock (CQ/CQ) HIGH
tCQHCQH
tCQHCQH
CQ clock rise to CQ clock rise
(rising edge to rising edge) [32]
tCHZ
tCHQZ
Clock (C/C) rise to high Z (active
to high Z) [33, 34]
tCLZ
tCHQX1
Clock (C/C) rise to low Z [33, 34]
tKC Var
tKC Var
Clock phase jitter
–
0.20
–
0.20
–
0.20
ns
tKC lock
tKC lock
PLL lock time (K, C) [35]
20
–
20
–
20
–
s
tKC Reset
tKC Reset
K static to PLL reset
30
–
30
–
30
–
ns
PLL Timing
Notes
32. These parameters are extrapolated from the input timing parameters (tCYC/2 – 250 ps, where 250 ps is the internal jitter). These parameters are only guaranteed by
design and are not tested in production.
33. tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in part (b) of Figure 5 on page 24. Transition is measured  100 mV from steady state voltage.
34. At any voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO.
35. For frequencies 300 MHz or below, the Cypress QDR II devices surpass the QDR consortium specification for PLL lock time (tKC lock) of 20 µs (min. spec.) and will
lock after 1024 clock cycles (min. spec.), after a stable clock is presented, per the previous 90 nm version.
Document Number: 001-57825 Rev. *I
Page 26 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
Switching Waveforms
Figure 6. Read/Write/Deselect Sequence [36, 37, 38]
READ
WRITE
READ
WRITE
READ
WRITE
NOP
WRITE
NOP
1
2
3
4
5
6
7
8
9
10
K
tKH
tKL
tKHKH
tCYC
K
RPS
tSC
t HC
WPS
A
D
A1
A2
tSA tHA
tSA tHA
D11
D30
A0
D10
A3
A4
A5
D31
D50
D51
tSD
Q00
t CLZ
C
tKL
tKH
tKHCH
D60
D61
tSD tHD
tHD
Q
tKHCH
A6
Q01
tDOH
tCO
Q20
Q21
Q41
Q40
tCQDOH
t CHZ
tCQD
t CYC
tKHKH
C
tCQOH
tCCQO
CQ
tCQOH
tCCQO
tCQH
tCQHCQH
CQ
DON’T CARE
UNDEFINED
Notes
36. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0 + 1.
37. Outputs are disabled (high Z) one clock cycle after a NOP.
38. In this example, if address A0 = A1, then data Q00 = D10 and Q01 = D11. Write data is forwarded immediately as read results. This note applies to the whole diagram.
Document Number: 001-57825 Rev. *I
Page 27 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
Ordering Information
The following table contains only the parts that are currently available. If you do not see what you are looking for, contact your local
sales representative. For more information, visit the Cypress website at www.cypress.com and refer to the product summary page at
http://www.cypress.com/products
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives and distributors. To find the office
closest to you, visit us at http://www.cypress.com/go/datasheet/offices.
Speed
(MHz)
333
Ordering Code
CY7C1425KV18-333BZC
Package
Diagram
Package Type
51-85180 165-ball FBGA (13 × 15 × 1.4 mm)
Operating
Range
Commercial
CY7C1412KV18-333BZC
CY7C1414KV18-333BZC
CY7C1414KV18-333BZXC
165-ball FBGA (13 × 15 × 1.4 mm) Pb-free
CY7C1412KV18-333BZXI
Industrial
CY7C1414KV18-333BZXI
300
CY7C1425KV18-300BZC
51-85180 165-ball FBGA (13 × 15 × 1.4 mm)
Commercial
CY7C1414KV18-300BZC
CY7C1425KV18-300BZXC
165-ball FBGA (13 × 15 × 1.4 mm) Pb-free
CY7C1412KV18-300BZXC
CY7C1414KV18-300BZXC
CY7C1414KV18-300BZI
165-ball FBGA (13 × 15 × 1.4 mm)
CY7C1412KV18-300BZXI
165-ball FBGA (13 × 15 × 1.4 mm) Pb-free
Industrial
CY7C1414KV18-300BZXI
250
CY7C1425KV18-250BZC
51-85180 165-ball FBGA (13 × 15 × 1.4 mm)
Commercial
CY7C1412KV18-250BZC
CY7C1414KV18-250BZC
CY7C1425KV18-250BZXC
165-ball FBGA (13 × 15 × 1.4 mm) Pb-free
CY7C1412KV18-250BZXC
CY7C1414KV18-250BZXC
CY7C1425KV18-250BZI
165-ball FBGA (13 × 15 × 1.4 mm)
Industrial
CY7C1412KV18-250BZI
CY7C1414KV18-250BZI
CY7C1425KV18-250BZXI
165-ball FBGA (13 × 15 × 1.4 mm) Pb-free
CY7C1412KV18-250BZXI
CY7C1414KV18-250BZXI
Document Number: 001-57825 Rev. *I
Page 28 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
Ordering Code Definitions
CY 7
C 14XX K V18 - XXX BZ
X
X
Temperature Range: X = C or I
C = Commercial = 0 C to +70 C; I = Industrial = –40 C to +85 C
X = Pb-free; X Absent = Leaded
Package Type: BZ = 165-ball FBGA
Speed Grade: XXX = 333 MHz or 300 MHz or 250 MHz
V18 = 1.8 V VDD
Process Technology K = 65 nm
Part Identifier: 14XX = 1412 or 1414 or 1425
Technology Code: C = CMOS
Marketing Code: 7 = SRAM
Company ID: CY = Cypress
Document Number: 001-57825 Rev. *I
Page 29 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
Package Diagram
Figure 7. 165-ball FBGA (13 × 15 × 1.4 mm) BB165D/BW165D (0.5 Ball Diameter) Package Outline, 51-85180
51-85180 *F
Document Number: 001-57825 Rev. *I
Page 30 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
Acronyms
Acronym
Document Conventions
Description
Units of Measure
DDR
double data rate
FBGA
fine-pitch ball grid array
°C
degree Celsius
HSTL
high-speed transceiver logic
MHz
megahertz
I/O
input/output
µA
microampere
JTAG
joint test action group
µs
microsecond
LSB
least significant bit
mA
milliampere
MSB
most significant bit
mm
millimeter
PLL
phase locked loop
ms
millisecond
QDR
quad data rate
ns
nanosecond
SRAM
static random access memory

ohm
TAP
test access port
%
percent
TCK
test clock
pF
picofarad
TDI
test data-in
V
volt
TDO
test data-out
W
watt
TMS
test mode select
Document Number: 001-57825 Rev. *I
Symbol
Unit of Measure
Page 31 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
Document History Page
Document Title: CY7C1425KV18/CY7C1412KV18/CY7C1414KV18, 36-Mbit QDR® II SRAM Two-Word Burst Architecture
Document Number: 001-57825
Rev.
ECN No.
Orig. of
Change
Submission
Date
**
2816620
VKN /
AESA
11/27/2009
New data sheet.
*A
2884865
VKN
02/26/2010
Updated Switching Characteristics (Changed the minimum value of tSA and
tSC parameters from 0.7 ns to 0.5 ns for 167 MHz, from 0.6 ns to 0.4 ns for
200 MHz, from 0.5 ns to 0.35 ns for 250 MHz, and from 0.4 ns to 0.3 ns for
333 MHz and 300 MHz).
*B
3018546
NJY
10/21/2010
Changed status from Preliminary to Final.
Added Ordering Code Definitions.
Minor edits and updated in new template.
*C
3155124
VIDB
01/27/2011
Added Note 35.
*D
3165654
NJY
02/08/2011
Updated Note 35.
Updated Ordering Information (Updated part numbers).
Added Acronyms and Units of Measure.
*E
3436284
PRIT
11/11/2011
Updated Ordering Information (Updated part numbers).
*F
3549927
PRIT
03/13/2012
Updated Features (Removed CY7C1410KV18 part related information).
Updated Configurations (Removed CY7C1410KV18 part related information).
Updated Functional Description (Removed CY7C1410KV18 part related
information).
Updated Selection Guide (Removed 167 MHz and 200 MHz frequencies
related information).
Removed Logic Block Diagram – CY7C1410KV18.
Updated Pin Configurations (Removed CY7C1410KV18 part related
information).
Updated Pin Definitions (Removed CY7C1410KV18 part related information).
Updated Functional Overview (Removed CY7C1410KV18 part related
information).
Updated Truth Table (Removed CY7C1410KV18 part related information).
Updated Write Cycle Descriptions (Removed CY7C1410KV18 part related
information).
Updated Identification Register Definitions (Removed CY7C1410KV18 part
related information).
Updated Electrical Characteristics (Updated DC Electrical Characteristics
(Removed 167 MHz and 200 MHz frequencies related information)).
Updated Switching Characteristics (Removed 167 MHz and 200 MHz
frequencies related information, updated Note 30).
Updated Ordering Information (Updated part numbers).
Updated Package Diagram.
Description of Change
*G
3789642
PRIT
10/22/2012
Updated Package Diagram (spec 51-85180 (Changed revision from *E to *F)).
*H
3860026
PRIT
01/10/2013
Updated Ordering Information (Updated part numbers).
*I
3905088
PRIT
03/20/2013
Updated Ordering Information:
Added MPN CY7C1414KV18-333BZXI.
Document Number: 001-57825 Rev. *I
Page 32 of 33
CY7C1425KV18
CY7C1412KV18
CY7C1414KV18
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
Products
Automotive
Clocks & Buffers
Interface
Lighting & Power Control
PSoC Solutions
cypress.com/go/automotive
cypress.com/go/clocks
psoc.cypress.com/solutions
cypress.com/go/interface
PSoC 1 | PSoC 3 | PSoC 5
cypress.com/go/powerpsoc
cypress.com/go/plc
Memory
Optical & Image Sensing
cypress.com/go/memory
cypress.com/go/image
PSoC
cypress.com/go/psoc
Touch Sensing
cypress.com/go/touch
USB Controllers
Wireless/RF
cypress.com/go/USB
cypress.com/go/wireless
© Cypress Semiconductor Corporation, 2009-2013. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 001-57825 Rev. *I
Revised March 20, 2013
Page 33 of 33
QDR II is a registered trademark of Cypress Semiconductor Corporation. QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and
Samsung. All products and company names mentioned in this document may be the trademarks of their respective holders.
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