SEMICONDUCTOR KMC7D0CN20CA TECHNICAL DATA Common N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It’s mainly suitable for Li-ion battery pack. C D 8 5 A FEATURES E1 VDSS=20V, ID=7A. 1 E B A1 4 Low Drain to Source On Resistance. : RDS(ON)=20.5m (Max.) @ VGS=4.5V DIM A A1 : RDS(ON)=21.0m (Max.) @ VGS=4.0V : RDS(ON)=22.5m (Max.) @ VGS=3.1V : RDS(ON)=26.0m (Max.) @ VGS=2.5V GAUGE PLANE ESD Protection. Super High Dense Cell Design. B MILLIMETERS 1.2 MAX 0.15 MAX _1 0.28 + C D E 0.65 Typ. _ 0.10 3.0 + _ 0.20 6.40 + E1 _ 0.10 4.40 + _ 0.20 0.50 + L 0.25 L MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Drain to Source Voltage VDSS 20 V Gate to Source Voltage VGSS DC Drain Current Pulsed Source to Drain Diode Current Drain Power Dissipation Ta = 25 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient TSSOP-8 Marking V 12 Type Name ID * 7 IDP * 28 IS * 1.7 A PD * 1.5 W Tj 150 Tstg -55 150 RthJA* 83.3 A KMC7D0 CN20CA Lot No. /W Note > *Surface Mounted on 1” 1” FR4 Board, t≤10sec PIN CONNECTION (TOP VIEW) D 1 8 D 1 S1 2 7 S2 2 S1 3 6 S2 3 6 G1 4 5 G2 4 5 2008. 12. 19 Revision No : 3 8 Rg Rg 7 1/5 KMC7D0CN20CA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static BVDSS VGS=0V, ID=250 A 20 - - V Drain Cut-off Current IDSS VDS=16V, VGS=0V - - 1 A Gate to Source Leakage Current IGSS VGS= 10V, VDS=0V - - 10 A Gate Threshold Voltage Vth VDS=VGS, ID=250 A 0.5 0.7 1.5 VGS=4.5V, ID=4.0A - 16.5 20.5 VGS=4.0V, ID=3.0A - 17.0 21.0 VGS=3.1V, ID=3.0A - 18.5 22.5 VGS=2.5V, ID=3.0A - 20.5 26.0 Drain to Source Breakdown Voltage RDS(ON)* Drain to Source On Resistance Gate Resistance Rg f=1MHz - 2.5 - Forward Transconductance gfs* VDS=5V, ID=5A - 12 - - 6.7 - - 0.8 - V m k S Dynamic Qg* Total Gate Charge VDS=10V, ID=7A Gate to Source Charge Qgs* Gate to Drain Charge Qgd* - 3.2 - Turn-On Delay Time td(on) - 1.0 - VDD=10V, VGS=4.0V - 2.1 - ID=4.0A, RG=6 - 8.5 - - 7.5 - - 0.8 1.2 tr Turn-On Rise Time td(off) Turn-Off Delay Time VGS=4.0V tf Turn-Off Fall Time nC s Source to Drain Diode Ratings Source to Drain Diode Forward Voltage Note > *Pulse test : Pulse width 300 2008. 12. 19 VSD* VGS=0V, IS=1.7A V , Duty Cycle 2%. Revision No : 3 2/5 KMC7D0CN20CA Fig 2. RDS(ON) - ID Fig 1. ID - VDS 30 Drain to Source On-Resistance RDS(ON) (mΩ) Drain Current ID (A) 30 VGS=4.5,4.0,3.1,2.5V 24 18 VGS=2V 12 6 0 1 2 3 4 VGS=2.5V 20 VGS=4.5V 15 10 5 5 0 6 12 Fig 3. ID - VGS Fig 4. RDS(ON) - Tj 30 Drain to Source On-Resistance RDS(ON) (mΩ) 50 24 18 12 125 C 6 25 C 0 0 0.5 1.0 1.5 2.0 ID= 4A Pulse Test 40 30 VGS=2.5V 20 0 -75 2.5 VGS=4.5V 10 -50 -25 Gate to Source Voltage VGS (V) 0 1.6 1.2 0.8 0.4 0 -50 -25 0 75 100 125 150 100 Common Source VGS = VDS, ID = 250µA Pulse Test -75 50 Fig 6. IS - VSD Reverse Drain Current IS (A) 2.0 25 Junction Temperature Tj ( C ) Fig 5. Vth - Tj Gate Threshold Voltage Vth (V) 24 Drain Current ID (A) -25 C 25 50 75 100 125 150 Junction Temperature Tj ( C) 2008. 12. 19 18 Drain to Source Voltage VDS (V) 30 Drain Current ID (A) 25 0 0 Common Source Ta =25 C Pulse Test Revision No : 3 10 1 85 C 25 C -40 C 0.1 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Source to Drain Forward Voltage VSD (V) 3/5 KMC7D0CN20CA Fig 8. VGS - Qg Capacitance C (pF) 104 Gate to Source Voltage VGS (V) Fig 7. C - VDS VGS = 0 f =1MHz 103 Ciss Coss 102 101 10-2 Crss 5 4 3 2 1 0 1 10-1 101 102 VDS = 10V ID = 7A 0 1.5 3.0 4.5 6.0 7.5 Gate Charge Qg (nC) Drain to Source Voltage VDS (V) Fig 9. Safe Operating Area 102 Operating in this area is Limited by RDS(ON) Drain Current ID (A) 200µs 101 1ms 1 10ms DC 100ms 10-1 VGS = 4.5V Single Pulse Ta = 25 C 10-2 10-2 1 10-1 101 102 Drain to Source Voltage VDS (V) Normalized Transient Thermal Resistance Fig 10. Transient Thermal Response Curve 101 1 Duty Cycle 0.5 0.2 PDM 0.1 t1 10-1 0.05 t2 0.02 - Duty Cycle, D=t1/t2 Single Pulse 10-2 -3 10 - RthJA = 10-2 10-1 1 101 102 Tj(max) - Ta PD 103 Square Wave Pulse Duration tw (sec) 2008. 12. 19 Revision No : 3 4/5 KMC7D0CN20CA Fig 11. Gate Charge VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig 12 . Resistive Load Switching RL VDS 90% 0.5 VDSS 6Ω VDS 4.0 V VGS VGS 10% td(on) tr ton 2008. 12. 19 Revision No : 3 td(off) tf toff 5/5