KTA1663 TRANSISTOR (PNP) SOT-89 FEATURES z High current applications z Complementary to KTC4375 1. BASE 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-1mA, IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC=0 -5 V Collector cut-off current ICBO VCB=-30V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 μA DC current gain hFE VCE=-2V, IC=-0.5A Collector-emitter saturation voltage VCE(sat) Base-emitter voltage VBE Transition frequency fT Collector output capacitance Cob 100 320 IC=-1.5A, IB=-30mA -2 V VCE=-2V, IC=-0.5A -1 V VCE=-2V, IC=-500mA 120 VCB=-10V, IE=0,f=1MHz MHz 50 MHz CLASSIFICATION OF hFE Rank Range O Y 100-200 160-320 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KTA1663 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５