TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors KTC3203 TRANSISTOR (NPN) TO-92 FEATURES z Complementary to KTA1271 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. BASE Symbol Parameter Value Unit V VCBO Collector-Base Voltage 35 VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 800 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = 0.1mA, IB=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 0.1mA, IC=0 5 V Collector cut-off current ICBO VCB= 35V , IE=0 0.1 μA Collector cut-off current ICEO VCE= 25V , IB=0 0.2 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE(1) VCE=1V, IC= 100mA 100 hFE(2) VCE=1V, IC= 700mA 35 320 DC current gain Collector-emitter saturation voltage VCE(sat) IC= 500 mA, IB= 20mA 0.5 V 0.8 V Base-emitter voltage VBE VCE= 1V, IC= 10mA Transition frequency fT VCE= 5 V, IC= 10mA 120 MHz Collector Output Capacitance Cob VCB=10V,IE= 0,f=1MHz 13 pF CLASSIFICATION OF hFE(1) Rank Range O Y 100-200 160-320 A,June,2011