SEMICONDUCTOR KTD2066 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. LAMP SOLENOID DRIVER APPLICATION. A P S K G B E L L R J M D D ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7 V DC IC 5 Pulse ICP 8 IB 1 N 1 N 2 H 3 S 0.5 Typ G H J K L 1. BASE Q MAXIMUM RATING (Ta=25 M N P Q R MILLIMETERS _ 0.3 10.0 + _ 0.3 15.0 + _ 0.3 2.70 + 0.76+0.09/-0.05 _ 0.2 Φ3.2 + _ 0.3 3.0 + _ 0.3 12.0 + 0.5+0.1/-0.05 _ 0.5 13.6 + _ 0.2 3.7 + 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 0.1 2.54 + _ 0.1 6.8 + _ 0.2 4.5 + _ 0.2 2.6 + DIM A B C D E F F FEATURES High DC Current Gain : hFE=500 1500(IC=1A). Low Collector Saturation Voltage : VCE(sat)=0.35V(Max.) (IC=3A). C 2. COLLECTOR 3. EMITTER Collector Current A Base Current Collector Power Ta=25 Dissipation Tc=25 Junction Temperature Storage Temperature Range TO-220IS A 2 PC W EQUIVALENT CIRCUIT 30 Tj 150 Tstg -55 150 COLLECTOR BASE EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=80V, IE=0 - - 10 A Emitter Cut-off Current IEBO VEB=7V, IC=0 - - 10 A V(BR)CEO IC=50mA, IB=0 80 - - V hFE(1) VCE=1V, IC=1A 500 - 1500 hFE(2) VCE=1V, IC=5A 150 - - Collector-Emitter Saturation Voltage VCE(sat) IC=3A, IB=0.03A - - 0.35 V Base-Emitter Saturation Voltage VBE(sat) IC=3A, IB=0.03A - - 1.2 V IE=3A, IB=0 - - 2.5 V VCE=5V, IC=1A - 130 - MHz VCE=10V, IE=0, f=1MHz - 110 - pF - 0.6 - - 3.0 - - 0.8 - Collector-Emitter Breakdown Voltage DC Current Gain VECF fT Transition Frequency Collector Output Capacitance Turn-on Time Cob OUTPUT ton 20µsec INPUT Switching Time Storage Time Tstg IB1 0 Fall Time tf IB2 IB1=-I B2 =10mA DUTY CYCLE < 1% 2007. 5. 22 Revision No : 2 I B1 30Ω Collector-Emitter Forward Voltage I B2 VCC =30V S 1/2 KTD2066 VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) h FE - I C 1k VCE =5V 500 VCE =2V VCE =1V 300 100 COMMON EMITTER Tc=25 C 50 0.05 0.1 0.3 3 1 5 2 COMMON EMITTER I C /IB =100 1 0.5 0.3 0.05 Tc=-55 C 0.02 0.05 0.1 0.3 COLLECTOR CURRENT I C (A) DC CURRENT GAIN h FE Tc=100 C Tc=25 C Tc=-55 C 300 COMMON EMITTER VCE =1V 0.1 20 10 6 4 4 2 I B =2mA 0 1 3 5 0 10 20 1 0.5 0.3 N COLLECTOR CURRENT IC (A) S 0µ 10 S 1k 1m PULSE WIDTH t w (S) 100 IO AT ER C OP =25 c DC T 10 mS 1 I C MAX. (CONTINUOUS) 10 (2) 5 3 S 0m TRANSIENT THERMAL RESISTANCE r th ( C/W) 16 I C MAX.(PULSED) 10 10 (1) 1 12 20 10 0.1 8 SAFE OPERATING AREA CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA. (SINGLE NONREPETITIVE PULSE) (1) NO HEAT SINK (2) INFINITE HEAT SINK (Tc=25 C) 0.01 4 COLLECTOR-EMITTER VOLTAGE V CE (V) r th - t w 0.1 0.001 COMMON EMITTER Ta=25 C 6 COLLECTOR CURRENT I C (A) 100 14 0 0.3 10 I C - V CE 8 50 0.05 5 COLLECTOR CURRENT I C (A) 3k 100 3 1 10 h FE - I C 500 C Tc=25 C 0.1 COLLECTOR CURRENT I C (A) 1k 00 =1 Tc SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0.1 0.05 V CEO MAX. DC CURRENT GAIN h FE 3k 0.02 1 3 10 30 100 200 COLLECTOR-EMITTER VOLTAGE V CE (V) 2007. 5. 22 Revision No : 2 2/2