SEMICONDUCTOR KDS166F TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small package : TFSV. B Low forward voltage. B1 Fast reverse recovery time. DIM A A1 B B1 C D H T D C A1 A C Small total capacitance. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 mA Average Forward Current IO 100 mA Surge Current (10mS) IFSM 2 A Power Dissipation PD * 100 mW Tj 150 Tstg -55 150 H Maximum (Peak) Reverse Voltage Junction Temperature Storage Temperature Range * : Unit rating. Total rating=unit rating MILLIMETERS _ 0.05 1.0 + _ 0.05 0.7 + _ 0.05 1.0 + _ 0.05 0.8 + 0.35 _ 0.05 0.15 + 0.38+0.02/-0.04 _ 0.05 0.1 + T 1. ANODE 1 2. N.C 3. ANODE 2 4. CATHODE 2 5. CATHODE 1 TFSV Marking 5 1.5 4 Lot No. SC 1 2 D1 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Forward Voltage 3 D2 ) SYMBOL TEST CONDITION MIN. TYP. MAX. VF(1) IF=1mA - 0.60 - VF(2) IF=10mA - 0.72 - VF(3) IF=100mA - 0.90 1.20 UNIT V Reverse Current IR VR=80V - - 0.5 A Total Capacitance CT VR=0V, f=1MHz - 0.9 3.0 pF Reverse Recovery Time trr IF=10mA - 1.6 4.0 ns 2006. 1. 13 Revision No : 0 1/2 KDS166F IR - VR REVERSE CURRENT IR (µA) 3 10 2 10 Ta = 10 0 C Ta =2 Ta 5 C =-2 5 C 10 1 10 -1 -2 0 0.2 0.4 0.6 0.8 1.0 1.2 Ta=75 C 10 -1 10 -2 10 -3 Ta=50 C Ta=25 C 0 20 40 60 80 CT - VR trr - IF f=1MHz Ta=25 C 1.6 1.2 0.8 0.4 0.1 Ta=100 C 1 REVERSE VOLTAGE VR (V) 2.0 0 10 FORWARD VOLTAGE VF (V) REVERSE RECOVERY TIME trr (ns) 10 TOTAL CAPACITANCE CT (pF) FORWARD CURRENT IF (mA) IF - VF 0.3 3 1 10 30 100 100 Ta=25 C Fig. 1 50 30 10 5 3 1 0.5 0.1 0.3 REVERSE VOLTAGE VR (R) 1 3 10 30 100 FORWARD CURRENT IF (mA) Fig. 1. REVERSE RECOVERY TIME (trr) TEST CIRCUIT INPUT WAVEFORM DUT 0.01µF INPUT 50Ω -6V 2kΩ 50Ω 0 50ns OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω) WAVEFORM I F =10mA 0 0.1 IR IR E t rr PULSE GENERATOR (R OUT =50Ω) 2006. 1. 13 Revision No : 0 2/2