SEMICONDUCTOR TECHNICAL DATA KDV214E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. FEATURES Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. 1 A (Max.) E C B Low Series Resistance : rS=0.57 CATHODE MARK High Capacitance Ratio : C2V/C25V=6.3(Typ.) 2 D MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT Reverse Voltage VR 32 V Junction Temperature Tj 125 Tstg -55 125 Storage Temperature Range F DIM A B C D E F 1. ANODE 2. CATHODE MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 + ESC ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL IR Reverse Current TEST CONDITION VR=28V MIN. TYP. MAX. UNIT - - 10 nA Capacitance C2V VR=2V, f=1MHz 14.15 - 15.75 pF Capacitance C25V VR=25V, f=1MHz 2.06 - 2.35 pF 6.3 - - - - - 0.57 Capacitance Ratio C2V/C25V Series Resistance rS VR=5V, f=470MHz Note : Available in matched group for capacitance to 2.0%. C(Max.)-C(Min.) C(Min.) 0.02 (VR=2~25V) Marking Type Name UO 2003. 12. 2 Revision No : 3 1/2 KDV214E I R - VR 10 10 10 20 TOTAL CAPACITANCE CT (pF) REVERSE CURRENT I R (A) 10 C T - VR -10 -11 -12 -13 0 10 20 30 15 10 5 0 40 1 10 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) r s - VR ∆(LOG CT ) / ∆(LOG VR ) - VR 0.6 50 0 f=470MHz 0.5 ∆(LOG CT) / ∆(LOG VR) SERIES RESISTANCE rs (Ω) f=1MHz 0.4 0.3 0.2 0.1 0 -1.0 -1.5 1 10 REVERSE VOLTAGE VR (V) 2003. 12. 2 -0.5 Revision No : 3 50 1 10 50 REVERSE VOLTAGE VR (V) 2/2