KTC4075 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE 2. EMITTER z z z z Excellent hFE linearity High hFE Low Noise Complementary to KTA2014 3. COLLECTOR MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 100 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 5 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA hFE DC current gain Collector-emitter saturation voltage VCEsat 70 IC=100mA, IB= 10mA 700 0.25 VCE=10V, IC= 1mA fT Transition frequency VCE= 6V, IC=2mA 80 V MHz Collector output capacitance Cob VCE=10V, IE=0, f=1MHz 3.5 pF Noise figure NF VCE=6V,IE=0.1mA, f=1KHz,RG=10KΩ 10 dB CLASSIFICATION OF hFE Rank Range Marking O Y GR BL 70~140 120~240 200~400 350~700 LO LY LGR LBL １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KTC4075 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KTC4075 ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５