LS101A, LS101B, LS101C Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 9612009 Applications Mechanical Data • • • • • • Case: QuadroMELF SOD-80 Weight: approx. 34 mg Cathode Band Color: Black Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box HF-Detector Protection circuit Diode for low currents with a low supply voltage Small battery charger Power supplies DC / DC converter for notebooks Parts Table Part Type differentiation Ordering code Remarks VR = 60 V, VF at IF = 1 mA max. 410 mV LS101A-GS18 or LS101A-GS08 Tape and Reel LS101B VR = 50 V, VF at IF = 1 mA max. 400 mV LS101B-GS18 or LS101B-GS08 Tape and Reel LS101C VR = 40 V, VF at IF = 1 mA max. 390 mV LS101C-GS18 or LS101C-GS08 Tape and Reel LS101A Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse voltage Peak forward surge current Repetitive peak forward current Forward continuous current Document Number 85628 Rev. 1.5, 05-Aug-10 tp = 10 µs Part Symbol Value Unit LS101A VR 60 V LS101B VR 50 V LS101C VR 40 V IFSM 2 A IFRM 150 mA IF 30 mA For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 LS101A, LS101B, LS101C Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Test condition Symbol Value Unit on PC board 50 mm x 50 mm x 1.6 mm RthJA 320 K/W Tj 125 °C Tstg - 65 to + 150 °C Junction temperature Storage temperature range Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Leakage current Min V(BR) 60 Typ. Max Unit V LS101B V(BR) 50 V V(BR) 40 V VR = 50 V LS101A IR 200 nA VR = 40 V LS101B IR 200 nA VR = 30 V LS101C IR 200 nA LS101A VF 410 mV LS101B VF 400 mV LS101C VF 390 mV LS101A VF 1000 mV LS101B VF 950 mV LS101C VF 900 mV IF = 1 mA Forward voltage drop IF = 15 mA VR = 0 V, f = 1 MHz Diode capacitance Symbol LS101C IR = 10 µA Reverse Breakdown Voltage Part LS101A LS101A CD 2 pF LS101B CD 2.1 pF LS101C CD 2.2 pF Typical Characteristics Tamb = 25 °C, unless otherwise specified 2.0 Tj = 125 °C 10 Tj = 100 °C Tj = 75 °C 1 Tj = 50 °C 0.1 Tj = 25 °C CD - Diode Capacitance (pF) IR = Reverse Current (µA) 100 Tj = 25 °C 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.01 0 16204 5 10 15 20 25 30 35 40 45 VR - Reverse Voltage (V) Figure 1. Reverse Current vs. Reverse Voltage www.vishay.com 2 50 0 16205 5 10 15 20 25 30 35 40 45 50 VR - Reverse Voltage (V) Figure 2. Diode Capacitance vs. Reverse Voltage For technical questions within your region, please contact one of the following: Document Number 85628 [email protected], [email protected], [email protected] Rev. 1.5, 05-Aug-10 LS101A, LS101B, LS101C Vishay Semiconductors IF - Forward Current (mA) 10.00 1.00 0.10 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 16206 VF - Forward Voltage (V) Figure 3. Forward Current vs. Forward Voltage Package Dimensions in millimeters (inches): QuadroMELF SOD-80 12071 Document Number 85628 Rev. 1.5, 05-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 QuadroMELF SOD80 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches) 1.6 (0.063) 1.4 (0.055) 1. 7 (0 .0 gl as 67) s Cathode identification > R3 (R0.118) glass 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 2.5 (0.098) max. 2 (0.079) min. 1.25 (0.049) min. 5 (0.197) ref. 96 12071 Document Number: 84025 Rev. 1.2, 12-Jan-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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