CYPRESS CY7C194BN

CY7C194BN
256 Kb (64 K × 4) Static RAM
256 Kb (64 K × 4) Static RAM
Features
General Description
■
Fast access time: 15 ns
■
Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V)
■
Complementary metal oxide semiconductor (CMOS) for
optimum speed/power
■
Transistor transistor logic (TTL) compatible inputs and outputs
■
CY7C194BN is available in 24-pin DIP, 24-pin SOJ packages.
The CY7C194BN is a high-performance CMOS Asynchronous
SRAM organized as 64 K × 4 bits that supports an asynchronous
memory interface. The device features an automatic
power-down feature that significantly reduces power
consumption when deselected.
See the Truth Table in this data sheet for a complete description
of read and write modes.
The CY7C194BN is available in 24-pin DIP, 24-pin SOJ
package(s).
Logic Block Diagram
RAM Array
Sense Amps
Row Decoder
Input Buffer
I/Ox
CE
Column Decoder
WE
Power
Down
Circuit
OE
(7C195 only)
X
Cypress Semiconductor Corporation
Document #: 001-06446 Rev. *D
•
198 Champion Court
•
A
X
San Jose, CA 95134-1709
•
408-943-2600
Revised June 2, 2011
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CY7C194BN
Contents
Product Portfolio .............................................................. 3
Pin Layout and Specification .......................................... 4
Pin Description ................................................................. 5
CY7C194BN Truth Table .................................................. 5
Maximum Ratings ............................................................. 5
Operating Range ............................................................... 5
DC Electrical Characteristics .......................................... 6
Capacitance ...................................................................... 6
Thermal Resistance .......................................................... 6
AC Test Loads .................................................................. 7
AC Test Conditions .......................................................... 7
AC Electrical Characteristics .......................................... 8
Timing Waveforms ........................................................... 8
Document #: 001-06446 Rev. *D
Ordering Information ...................................................... 11
Ordering Code Definitions ......................................... 11
Package Diagrams .......................................................... 12
Acronyms ........................................................................ 13
Document Conventions ................................................. 13
Units of Measure ....................................................... 13
Document History Page ................................................. 14
Sales, Solutions, and Legal Information ...................... 15
Worldwide Sales and Design Support ....................... 15
Products .................................................................... 15
PSoC Solutions ......................................................... 15
Page 2 of 15
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CY7C194BN
Product Portfolio
-15
Unit
Maximum access time
Description
15
ns
Maximum operating current
80
mA
Maximum CMOS standby current
10
mA
Document #: 001-06446 Rev. *D
Page 3 of 15
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CY7C194BN
Pin Layout and Specification
CY7C194BN 24-pin SOJ (8 × 15 × 3.5 mm)
A6
1
24
VCC
A7
2
23
A5
A8
3
22
A4
A9
4
21
A3
A10
5
20
A2
A11
6
19
A1
A12
7
18
A0
A13
8
17
I/O3
A14
9
16
I/O2
A15
10
15
I/O1
CE
11
14
I/O0
GND
12
13
WE
CY7C194BN 24-pin DIP (6.6 × 31.8 × 3.5 mm)
Document #: 001-06446 Rev. *D
A6
1
24
VCC
A7
2
23
A5
A8
3
22
A4
A9
4
21
A3
A10
5
20
A2
A11
6
19
A1
A12
7
18
A0
A13
8
17
I/O3
A14
9
16
I/O2
A15
10
15
I/O1
CE
11
14
I/O0
GND
12
13
WE
Page 4 of 15
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CY7C194BN
Pin Description
Pin
Type
CY7C194BN
Description
AX
Input
Address inputs
CE
Control
Chip enable
I/OX
Input or output
Data input/outputs
NC
–
VCC
WE
24-pin DIP
24-pin SOJ
1, 2, 3, 4, 5, 6, 7, 8, 9, 10,
18, 19, 20, 21, 22, 23
1, 2, 3, 4, 5, 6, 7, 8, 9, 10,
18, 19, 20, 21, 22, 23
11
11
14, 15, 16, 17
14, 15, 16, 17
No connect. pins are not internally
connected to the die
–
–
Supply
Power (V)
24
24
Control
Write enable
13
13
CY7C194BN Truth Table
CE
WE
H
X
High Z
I/Ox
Power-down
Mode
Standby (ISB)
Power
L
H
Data out
Read
Active (ICC)
L
L
Data in
Write
Active (ICC)
Maximum Ratings
Above which the useful life may be impaired. For user guidelines, not tested.
Parameter
Description
Value
Unit
TSTG
Storage temperature
–65 to +150
°C
TAMB
Ambient temperature with power applied (i.e. case temperature)
–55 to +125
°C
VCC
Core supply voltage relative to VSS
VIN, VOUT
DC voltage applied to any pin relative to VSS
IOUT
Output short-circuit current
VESD
Static discharge voltage (per MIL-STD-883, Method 3015)
ILU
Latch-up current
> 200
mA
–0.5 to +7.0
V
–0.5 to VCC + 0.5
V
20
mA
> 2001
V
Operating Range
Range
Ambient Temperature (TA)
Voltage Range (VCC)
Commercial
0 °C to 70 °C
5.0 V ± 10%
Document #: 001-06446 Rev. *D
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CY7C194BN
DC Electrical Characteristics
Parameter [1]
Description
Condition
15 ns
Unit
Min
Max
2.2
VCC + 0.3
V
–0.3
0.8
V
2.4
–
V
VIH
Input HIGH voltage
VIL
Input LOW voltage
VOH
Output HIGH voltage
VCC = Min, lOH = –4.0 mA
VOL
Output LOW voltage
VCC = Min, lOL = 8.0 mA
–
0.4
V
ICC
VCC operating supply current
VCC = Max, IOUT = 0 mA,
f = FMAX = 1 / tRC
–
80
mA
ISB1
Automatic CE Power-down current –
TTL inputs
VCC = Max, CE  VIH, VIN  VIH or
VIN  VIL, f = FMAX
–
30
mA
ISB2
Automatic CE Power-down current –
CMOS inputs
VCC = Max, CE  VCC – 0.3 V,
VIN > VCC – 0.3 V or VIN  0.3 V,
f = 0, Commercial
–
10
mA
IOZ
Output leakage current
GND  VI  VCC, output disabled
–5
+5
A
IIX
Input load current
GND  VI  VCC
–5
+5
A
Max
Unit
7
pF
10
–
Capacitance
Parameter [2]
Description
CIN
Input capacitance
COUT
Output capacitance
Conditions
TA = 25 °C, f = 1 MHz, VCC = 5.0 V
Thermal Resistance
Parameter [2, 3]
Description
JA
Thermal resistance
(junction to ambient)
JC
Thermal resistance
(junction to case)
Conditions
Still Air, soldered on a 3 x 4.5 square
inches, two-layer printed circuit
board
CY7C194BN
24-pin DIP
24-pin SOJ
75.69
84.15
33.80
37.56
Unit
°C/W
Notes
1. VIL(min) = –2.0 V for pulse durations of less than 20 ns.
2. Tested initially and after any design or process change that may affect these parameters
3. Test Conditions assume a transition time of 3 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V.
Document #: 001-06446 Rev. *D
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CY7C194BN
AC Test Loads
Output Loads
Output Loads
for tHZOE
for , tHZCE & tHZWE
R1
R3
VCC
VCC
Output
C1
R2
C2
(A)*
(B)*
All Input Pulses
Thevenin Equivalent
Output
R4
VCC
VT
Rth
VSS
90%
90%
10%
10%
Rise Time
1 V/ns
Fall Time
1 V/ns
* including scope and jig capacitance
AC Test Conditions
Parameter
Description
Nom
Unit
30
pF
C1
Capacitor 1
C2
Capacitor 2
5
R1
Resistor 1
480
R2
Resistor 2
255
R3
Resistor 3
480
R4
Resistor 4
255
RTH
Resistor Thevenin
167
VTH
Voltage Thevenin
1.73
Document #: 001-06446 Rev. *D

V
Page 7 of 15
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CY7C194BN
AC Electrical Characteristics
Parameter [4, 5, 6, 7]
15 ns
Description
Min
Max
Unit
tRC
Read cycle time
15
–
ns
tAA
Address to data valid
–
15
ns
tOHA
Data hold from address change
3
–
ns
tACE
CE to data valid
–
15
ns
tLZCE
CE to Low Z
3
–
ns
tHZCE
CE to High Z
–
7
ns
tPU
CE to Power-up
0
–
ns
tPD
CE to Power-down
–
15
ns
tWC
Write cycle time
15
–
ns
tSCE
CE to write end
10
–
ns
tAW
Address set-up to write end
10
–
ns
tHA
Address hold from write end
0
–
ns
tSA
Address set-up to write start
0
–
ns
tPWE
WE pulse width
9
–
ns
tSD
Data set-up to write end
8
–
ns
tHD
Data hold from write end
0
–
ns
tHZWE
WE LOW to High Z
–
7
ns
tLZWE
WE HIGH to Low Z
3
–
ns
Timing Waveforms
Figure 1. Read Cycle No. 1 [8, 9]
tRC
Address
tAA
tOHA
Data Out
Previous Data Valid
Data Valid
Notes
4. Tested initially and after any design or process change that may affect these parameters
5. At any given temperature and voltage condition, tHZCE is less than tLZCE, and tHZWE is less than tLZWE for any given device.
6. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any
of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
7. tHZCE, tHZWE are specified as in part (b) of the A/C Test Loads. Transitions are measured ± 200 mV from steady state voltage.
8. Device is continuously selected. CE = VIL.
9. WE is HIGH for Read Cycle.
Document #: 001-06446 Rev. *D
Page 8 of 15
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CY7C194BN
Timing Waveforms (continued)
Figure 2. Read Cycle No. 2 [10, 11, 12]
tRC
Address
CE
tHZCE
tACE
OE
tDOE
tHZOE
tLZOE
High Z
Data Out
tLZCE
tPU
ICC
V CC
tPD
50%
ISB
Current
High Z
Data Valid
50%
Figure 3. Write Cycle No. 1 (WE Controlled) [10, 13]
t WC
Address
tSCE
CE
tAW
tHA
tPWE
tSA
WE
tSD
Data
In/Out
Undefined
tHD
Undefined
See Footnotes
Data-In Valid
see footnotes
tHZWE
tLZWE
Notes
10. Tested initially and after any design or process change that may affect these parameters
11. WE is HIGH in read cycle.
12. Address valid prior to or coincident with CE transition LOW.
13. The minimum write cycle time is the sum of tHZWE and tSD.
Document #: 001-06446 Rev. *D
Page 9 of 15
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CY7C194BN
Timing Waveforms (continued)
Figure 4. Write Cycle No. 2 (CE Controlled) [14, 15]
tWC
Address
tSCE
CE
tSA
tHA
tAW
WE
tSD
Data In/Out
High Z
Data-In Valid
tHD
High Z
Notes
14. This cycle is CE controlled.
15. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
Document #: 001-06446 Rev. *D
Page 10 of 15
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CY7C194BN
Ordering Information
Speed
(ns)
Ordering Code
Package
Diagram
15
CY7C194BN-15PC
51-85013
CY7C194BN-15VC
51-85030
Power
Option
Operating
Range
24-pin DIP (6.6 × 31.8 × 3.5 mm)
Standard
Commercial
24-pin SOJ (8 × 15 × 3.5 mm)
Standard
Commercial
Package Type
Please contact local sales representative regarding availability of these parts.
Ordering Code Definitions
CY 7 C 1 94 BN - 15
X
C
Temperature Range:
C = Commercial
Package Type: X = P or V
P = 24-pin DIP
V = 24-pin SOJ
Speed: 15 ns
BN = 0.25 µm Technology
94 = 256 K bit density with datawidth × 4bits
1 = Fast Asynchronous SRAM family
Technology Code: C = CMOS
7 = SRAM
CY = Cypress
Document #: 001-06446 Rev. *D
Page 11 of 15
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CY7C194BN
Package Diagrams
Figure 5. 24-pin (300-mil) SOJ V24.3/VZ24.3 (Molded SOJ V13), 51-85030
51-85030 *C
Figure 6. 24-pin PDIP (1.260 × 0.270 × 0.140 Inches) P24.3, 51-85013
51-85013 *C
Document #: 001-06446 Rev. *D
Page 12 of 15
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CY7C194BN
Acronyms
Acronym
Document Conventions
Description
Units of Measure
CE
CMOS
chip enable
complementary metal oxide semiconductor
°C
degree Celsius
DIP
dual in-line package
MHz
Mega Hertz
ESD
electrostatic discharge
A
micro Amperes
I/O
input/output
mA
milli Amperes
SOJ
small outline J-lead
mm
milli meter
SRAM
static random access memory
ns
nano seconds
TTL
transistor-transistor logic

ohms
WE
write enable
%
percent
pF
pico Farad
V
Volts
W
Watts
Document #: 001-06446 Rev. *D
Symbol
Unit of Measure
Page 13 of 15
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CY7C194BN
Document History Page
Document Title: CY7C194BN, 256 Kb (64 K × 4) Static RAM
Document Number: 001-06446
REV.
ECN No.
Issue Date
Orig. of
Change
Description of Change
**
424111
See ECN
NXR
New Data Sheet
*A
2892510
03/18/2010
VKN
Removed 25ns speed bin
Updated Ordering Information table
Updated Package Diagram
Added Sales, Solutions, and Legal Information
*B
3108898
12/13/2010
AJU
Added Ordering Code Definitions.
*C
3219087
04/18/2011
PRAS
Updated as per template
Added TOC
Added Acronyms and Units of Measure.
*D
3271782
06/02/2011
PRAS
Updated General Description (Removed “For best practice
recommendations, refer to the Cypress application note AN1064, SRAM
System Guidelines.”).
Updated in new template.
Document #: 001-06446 Rev. *D
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CY7C194BN
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
Products
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© Cypress Semiconductor Corporation, 2006-2011. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document #: 001-06446 Rev. *D
Revised June 2, 2011
Page 15 of 15
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